Properties of AlN films deposited by reactive ion-plasma sputtering View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2015-10

AUTHORS

N. A. Bert, A. D. Bondarev, V. V. Zolotarev, D. A. Kirilenko, Ya. V. Lubyanskiy, A. V. Lyutetskiy, S. O. Slipchenko, A. N. Petrunov, N. A. Pikhtin, K. R. Ayusheva, I. N. Arsentyev, I. S. Tarasov

ABSTRACT

The properties of SiO2, Al2O3, and AlN dielectric coatings deposited by reactive ion-plasma sputtering are studied. The refractive indices of the dielectric coatings are determined by optical ellipsometry. It is shown that aluminum nitride is the optimal material for achieving maximum illumination of the output mirror of a semiconductor laser. A crystalline phase with a hexagonal atomic lattice and oxygen content of up to 10 at % is found by transmission electron microscopy in the aluminum-nitride films. It is found that a decrease in the concentration of residual oxygen in the chamber of the reactive ion-plasma sputtering installation makes it possible to eliminate the appearance of vertical pores in the bulk of the aluminum-nitride film. More... »

PAGES

1383-1387

Journal

TITLE

Semiconductors

ISSUE

10

VOLUME

49

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782615100036

DOI

http://dx.doi.org/10.1134/s1063782615100036

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1009383522


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