Effect of irradiation with MeV protons and electrons on the conductivity compensation and photoluminescence of moderately doped p-4H-SiC (CVD) View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2015-09-03

AUTHORS

V. V. Kozlovski, A. A. Lebedev, E. V. Bogdanova, N. V. Seredova

ABSTRACT

The compensation of moderately doped p-4H-SiC samples grown by the chemical vapor deposition (CVD) method under irradiation with 0.9-MeV electrons and 15-MeV protons is studied. The experimentally measured carrier removal rates are 1.2–1.6 cm–1 for electrons and 240–260 cm–1 for protons. The dependence of the concentration of uncompensated acceptors and donors, measured in the study, demonstrates a linear decrease with increasing irradiation dose to the point of complete compensation. This run of the dependence shows that compensation of the samples is due to the transition of carriers to deep centers formed by primary radiation-induced defects. It is demonstrated that, in contrast to n-SiC (CVD), primary defects in the carbon sublattice of moderately doped p-SiC (CVD) only cannot account for the compensation process. In p-SiC, either primary defects in the silicon sublattice, or defects in both sublattices are responsible for conductivity compensation. Also, photoluminescence spectra are examined in relation to the irradiation dose. More... »

PAGES

1163-1165

References to SciGraph publications

  • 2014-09. Nonlinear effects in semiconductor-conductivity compensation by radiation defects in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 1999-02. Deep level centers in silicon carbide: A review in SEMICONDUCTORS
  • 2014-08-06. Conductivity compensation in n-4H-SiC (CVD) under irradiation with 0.9-MeV electrons in SEMICONDUCTORS
  • Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1134/s106378261509016x

    DOI

    http://dx.doi.org/10.1134/s106378261509016x

    DIMENSIONS

    https://app.dimensions.ai/details/publication/pub.1046253956


    Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
    Incoming Citations Browse incoming citations for this publication using opencitations.net

    JSON-LD is the canonical representation for SciGraph data.

    TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

    [
      {
        "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
        "about": [
          {
            "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
            "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
            "name": "Physical Sciences", 
            "type": "DefinedTerm"
          }, 
          {
            "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0204", 
            "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
            "name": "Condensed Matter Physics", 
            "type": "DefinedTerm"
          }, 
          {
            "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0206", 
            "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
            "name": "Quantum Physics", 
            "type": "DefinedTerm"
          }
        ], 
        "author": [
          {
            "affiliation": {
              "alternateName": "St. Petersburg State Polytechnical University, 195251, St. Petersburg, Russia", 
              "id": "http://www.grid.ac/institutes/grid.32495.39", 
              "name": [
                "St. Petersburg State Polytechnical University, 195251, St. Petersburg, Russia"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Kozlovski", 
            "givenName": "V. V.", 
            "id": "sg:person.011730241573.99", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011730241573.99"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "Ioffe Physical\u2013Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
              "id": "http://www.grid.ac/institutes/grid.423485.c", 
              "name": [
                "Ioffe Physical\u2013Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Lebedev", 
            "givenName": "A. A.", 
            "id": "sg:person.011264364575.18", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011264364575.18"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "Ioffe Physical\u2013Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
              "id": "http://www.grid.ac/institutes/grid.423485.c", 
              "name": [
                "Ioffe Physical\u2013Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Bogdanova", 
            "givenName": "E. V.", 
            "id": "sg:person.012556446371.01", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012556446371.01"
            ], 
            "type": "Person"
          }, 
          {
            "affiliation": {
              "alternateName": "Ioffe Physical\u2013Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
              "id": "http://www.grid.ac/institutes/grid.423485.c", 
              "name": [
                "Ioffe Physical\u2013Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
              ], 
              "type": "Organization"
            }, 
            "familyName": "Seredova", 
            "givenName": "N. V.", 
            "id": "sg:person.011722477425.06", 
            "sameAs": [
              "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011722477425.06"
            ], 
            "type": "Person"
          }
        ], 
        "citation": [
          {
            "id": "sg:pub.10.1134/s1027451014050103", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1048356847", 
              "https://doi.org/10.1134/s1027451014050103"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "sg:pub.10.1134/s1063782614080156", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1040897109", 
              "https://doi.org/10.1134/s1063782614080156"
            ], 
            "type": "CreativeWork"
          }, 
          {
            "id": "sg:pub.10.1134/1.1187657", 
            "sameAs": [
              "https://app.dimensions.ai/details/publication/pub.1029352452", 
              "https://doi.org/10.1134/1.1187657"
            ], 
            "type": "CreativeWork"
          }
        ], 
        "datePublished": "2015-09-03", 
        "datePublishedReg": "2015-09-03", 
        "description": "The compensation of moderately doped p-4H-SiC samples grown by the chemical vapor deposition (CVD) method under irradiation with 0.9-MeV electrons and 15-MeV protons is studied. The experimentally measured carrier removal rates are 1.2\u20131.6 cm\u20131 for electrons and 240\u2013260 cm\u20131 for protons. The dependence of the concentration of uncompensated acceptors and donors, measured in the study, demonstrates a linear decrease with increasing irradiation dose to the point of complete compensation. This run of the dependence shows that compensation of the samples is due to the transition of carriers to deep centers formed by primary radiation-induced defects. It is demonstrated that, in contrast to n-SiC (CVD), primary defects in the carbon sublattice of moderately doped p-SiC (CVD) only cannot account for the compensation process. In p-SiC, either primary defects in the silicon sublattice, or defects in both sublattices are responsible for conductivity compensation. Also, photoluminescence spectra are examined in relation to the irradiation dose.", 
        "genre": "article", 
        "id": "sg:pub.10.1134/s106378261509016x", 
        "inLanguage": "en", 
        "isAccessibleForFree": false, 
        "isPartOf": [
          {
            "id": "sg:journal.1136692", 
            "issn": [
              "1063-7826", 
              "1090-6479"
            ], 
            "name": "Semiconductors", 
            "publisher": "Pleiades Publishing", 
            "type": "Periodical"
          }, 
          {
            "issueNumber": "9", 
            "type": "PublicationIssue"
          }, 
          {
            "type": "PublicationVolume", 
            "volumeNumber": "49"
          }
        ], 
        "keywords": [
          "primary defect", 
          "effect of irradiation", 
          "defects", 
          "donors", 
          "irradiation", 
          "linear decrease", 
          "decrease", 
          "samples", 
          "study", 
          "complete compensation", 
          "center", 
          "contrast", 
          "rate", 
          "effect", 
          "concentration", 
          "compensation process", 
          "conductivity compensation", 
          "carriers", 
          "relation", 
          "compensation", 
          "method", 
          "point", 
          "process", 
          "run", 
          "dependence", 
          "spectra", 
          "transition", 
          "chemical vapor deposition method", 
          "carrier removal rate", 
          "vapor deposition method", 
          "removal rate", 
          "deposition method", 
          "protons", 
          "acceptor", 
          "photoluminescence spectra", 
          "cm-1", 
          "uncompensated acceptors", 
          "transition of carriers", 
          "electrons", 
          "MeV protons", 
          "sublattice", 
          "radiation-induced defects", 
          "silicon sublattice", 
          "photoluminescence", 
          "SiC", 
          "carbon sublattice", 
          "deep centers", 
          "p-4H-SiC samples", 
          "primary radiation-induced defects"
        ], 
        "name": "Effect of irradiation with MeV protons and electrons on the conductivity compensation and photoluminescence of moderately doped p-4H-SiC (CVD)", 
        "pagination": "1163-1165", 
        "productId": [
          {
            "name": "dimensions_id", 
            "type": "PropertyValue", 
            "value": [
              "pub.1046253956"
            ]
          }, 
          {
            "name": "doi", 
            "type": "PropertyValue", 
            "value": [
              "10.1134/s106378261509016x"
            ]
          }
        ], 
        "sameAs": [
          "https://doi.org/10.1134/s106378261509016x", 
          "https://app.dimensions.ai/details/publication/pub.1046253956"
        ], 
        "sdDataset": "articles", 
        "sdDatePublished": "2022-01-01T18:35", 
        "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
        "sdPublisher": {
          "name": "Springer Nature - SN SciGraph project", 
          "type": "Organization"
        }, 
        "sdSource": "s3://com-springernature-scigraph/baseset/20220101/entities/gbq_results/article/article_650.jsonl", 
        "type": "ScholarlyArticle", 
        "url": "https://doi.org/10.1134/s106378261509016x"
      }
    ]
     

    Download the RDF metadata as:  json-ld nt turtle xml License info

    HOW TO GET THIS DATA PROGRAMMATICALLY:

    JSON-LD is a popular format for linked data which is fully compatible with JSON.

    curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/s106378261509016x'

    N-Triples is a line-based linked data format ideal for batch operations.

    curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/s106378261509016x'

    Turtle is a human-readable linked data format.

    curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/s106378261509016x'

    RDF/XML is a standard XML format for linked data.

    curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/s106378261509016x'


     

    This table displays all metadata directly associated to this object as RDF triples.

    147 TRIPLES      22 PREDICATES      78 URIs      66 LITERALS      6 BLANK NODES

    Subject Predicate Object
    1 sg:pub.10.1134/s106378261509016x schema:about anzsrc-for:02
    2 anzsrc-for:0204
    3 anzsrc-for:0206
    4 schema:author N9005bd1149b749f6a5a1eb29c8f56d8c
    5 schema:citation sg:pub.10.1134/1.1187657
    6 sg:pub.10.1134/s1027451014050103
    7 sg:pub.10.1134/s1063782614080156
    8 schema:datePublished 2015-09-03
    9 schema:datePublishedReg 2015-09-03
    10 schema:description The compensation of moderately doped p-4H-SiC samples grown by the chemical vapor deposition (CVD) method under irradiation with 0.9-MeV electrons and 15-MeV protons is studied. The experimentally measured carrier removal rates are 1.2–1.6 cm–1 for electrons and 240–260 cm–1 for protons. The dependence of the concentration of uncompensated acceptors and donors, measured in the study, demonstrates a linear decrease with increasing irradiation dose to the point of complete compensation. This run of the dependence shows that compensation of the samples is due to the transition of carriers to deep centers formed by primary radiation-induced defects. It is demonstrated that, in contrast to n-SiC (CVD), primary defects in the carbon sublattice of moderately doped p-SiC (CVD) only cannot account for the compensation process. In p-SiC, either primary defects in the silicon sublattice, or defects in both sublattices are responsible for conductivity compensation. Also, photoluminescence spectra are examined in relation to the irradiation dose.
    11 schema:genre article
    12 schema:inLanguage en
    13 schema:isAccessibleForFree false
    14 schema:isPartOf N82149d5dfa3f4e109224eca2a7c3bca9
    15 N99e19651a238473f9cbccefa818478bf
    16 sg:journal.1136692
    17 schema:keywords MeV protons
    18 SiC
    19 acceptor
    20 carbon sublattice
    21 carrier removal rate
    22 carriers
    23 center
    24 chemical vapor deposition method
    25 cm-1
    26 compensation
    27 compensation process
    28 complete compensation
    29 concentration
    30 conductivity compensation
    31 contrast
    32 decrease
    33 deep centers
    34 defects
    35 dependence
    36 deposition method
    37 donors
    38 effect
    39 effect of irradiation
    40 electrons
    41 irradiation
    42 linear decrease
    43 method
    44 p-4H-SiC samples
    45 photoluminescence
    46 photoluminescence spectra
    47 point
    48 primary defect
    49 primary radiation-induced defects
    50 process
    51 protons
    52 radiation-induced defects
    53 rate
    54 relation
    55 removal rate
    56 run
    57 samples
    58 silicon sublattice
    59 spectra
    60 study
    61 sublattice
    62 transition
    63 transition of carriers
    64 uncompensated acceptors
    65 vapor deposition method
    66 schema:name Effect of irradiation with MeV protons and electrons on the conductivity compensation and photoluminescence of moderately doped p-4H-SiC (CVD)
    67 schema:pagination 1163-1165
    68 schema:productId Nddc2dd6175784a5cba95a16a89e73b79
    69 Nf68e2b98a0da47edb78cb364676b4d69
    70 schema:sameAs https://app.dimensions.ai/details/publication/pub.1046253956
    71 https://doi.org/10.1134/s106378261509016x
    72 schema:sdDatePublished 2022-01-01T18:35
    73 schema:sdLicense https://scigraph.springernature.com/explorer/license/
    74 schema:sdPublisher Nd0b97000361b47ea848de179ed60a5ee
    75 schema:url https://doi.org/10.1134/s106378261509016x
    76 sgo:license sg:explorer/license/
    77 sgo:sdDataset articles
    78 rdf:type schema:ScholarlyArticle
    79 N064bc05033904b04bc38ace0d5470bf4 rdf:first sg:person.011722477425.06
    80 rdf:rest rdf:nil
    81 N2b8b031ae4a942118b481efea64032b0 rdf:first sg:person.011264364575.18
    82 rdf:rest Na62ca435795c4a0e8934abd68d757e0a
    83 N82149d5dfa3f4e109224eca2a7c3bca9 schema:issueNumber 9
    84 rdf:type schema:PublicationIssue
    85 N9005bd1149b749f6a5a1eb29c8f56d8c rdf:first sg:person.011730241573.99
    86 rdf:rest N2b8b031ae4a942118b481efea64032b0
    87 N99e19651a238473f9cbccefa818478bf schema:volumeNumber 49
    88 rdf:type schema:PublicationVolume
    89 Na62ca435795c4a0e8934abd68d757e0a rdf:first sg:person.012556446371.01
    90 rdf:rest N064bc05033904b04bc38ace0d5470bf4
    91 Nd0b97000361b47ea848de179ed60a5ee schema:name Springer Nature - SN SciGraph project
    92 rdf:type schema:Organization
    93 Nddc2dd6175784a5cba95a16a89e73b79 schema:name doi
    94 schema:value 10.1134/s106378261509016x
    95 rdf:type schema:PropertyValue
    96 Nf68e2b98a0da47edb78cb364676b4d69 schema:name dimensions_id
    97 schema:value pub.1046253956
    98 rdf:type schema:PropertyValue
    99 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
    100 schema:name Physical Sciences
    101 rdf:type schema:DefinedTerm
    102 anzsrc-for:0204 schema:inDefinedTermSet anzsrc-for:
    103 schema:name Condensed Matter Physics
    104 rdf:type schema:DefinedTerm
    105 anzsrc-for:0206 schema:inDefinedTermSet anzsrc-for:
    106 schema:name Quantum Physics
    107 rdf:type schema:DefinedTerm
    108 sg:journal.1136692 schema:issn 1063-7826
    109 1090-6479
    110 schema:name Semiconductors
    111 schema:publisher Pleiades Publishing
    112 rdf:type schema:Periodical
    113 sg:person.011264364575.18 schema:affiliation grid-institutes:grid.423485.c
    114 schema:familyName Lebedev
    115 schema:givenName A. A.
    116 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011264364575.18
    117 rdf:type schema:Person
    118 sg:person.011722477425.06 schema:affiliation grid-institutes:grid.423485.c
    119 schema:familyName Seredova
    120 schema:givenName N. V.
    121 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011722477425.06
    122 rdf:type schema:Person
    123 sg:person.011730241573.99 schema:affiliation grid-institutes:grid.32495.39
    124 schema:familyName Kozlovski
    125 schema:givenName V. V.
    126 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011730241573.99
    127 rdf:type schema:Person
    128 sg:person.012556446371.01 schema:affiliation grid-institutes:grid.423485.c
    129 schema:familyName Bogdanova
    130 schema:givenName E. V.
    131 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012556446371.01
    132 rdf:type schema:Person
    133 sg:pub.10.1134/1.1187657 schema:sameAs https://app.dimensions.ai/details/publication/pub.1029352452
    134 https://doi.org/10.1134/1.1187657
    135 rdf:type schema:CreativeWork
    136 sg:pub.10.1134/s1027451014050103 schema:sameAs https://app.dimensions.ai/details/publication/pub.1048356847
    137 https://doi.org/10.1134/s1027451014050103
    138 rdf:type schema:CreativeWork
    139 sg:pub.10.1134/s1063782614080156 schema:sameAs https://app.dimensions.ai/details/publication/pub.1040897109
    140 https://doi.org/10.1134/s1063782614080156
    141 rdf:type schema:CreativeWork
    142 grid-institutes:grid.32495.39 schema:alternateName St. Petersburg State Polytechnical University, 195251, St. Petersburg, Russia
    143 schema:name St. Petersburg State Polytechnical University, 195251, St. Petersburg, Russia
    144 rdf:type schema:Organization
    145 grid-institutes:grid.423485.c schema:alternateName Ioffe Physical–Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
    146 schema:name Ioffe Physical–Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
    147 rdf:type schema:Organization
     




    Preview window. Press ESC to close (or click here)


    ...