Site-Controlled Growth of Single InP QDs View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2015-08-02

AUTHORS

A. S. Vlasov, A. M. Mintairov, N. A. Kalyuzhnyy, S. A. Mintairov, R. A. Salii, A. I. Denisyuk, R. A. Babunts

ABSTRACT

The MOVPE growth of InP/GaInP quantum dots (QDs) on GaAs substrate “defects” formed by a focused beam of Ga+ ions is studied. It is shown that ordered arrays of QDs with a density of 0.25 (μm)−2 can be obtained in the InP/GaInP system. It is demonstrated that effective luminescence can be obtained by using two QD sheets separated by a GaAs/GaInP buffer layer. More... »

PAGES

1095-1098

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782615080230

DOI

http://dx.doi.org/10.1134/s1063782615080230

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1047636720


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