Molecular beam epitaxy of ZnSSe/CdSe short-period superlattices for III–V/II–VI multijunction solar cells View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2015-08

AUTHORS

S. V. Sorokin, S. V. Gronin, I. V. Sedova, G. V. Klimko, E. A. Evropeitsev, M. V. Baidakova, A. A. Sitnikova, A. A. Toropov, S. V. Ivanov

ABSTRACT

Results on the molecular-beam epitaxy growth of short-period alternately-strained ZnSxSe1−x/CdSe superlattices which are pseudomorphic to GaAs (001) substrates and possess effective band-gap values within the range of Eg ≈ 2.5–2.7 eV are presented. Oscillations of the specular-spot intensity in reflection high-energy electron diffraction are used for in situ control of the superlattice parameters. A method to determine the SL parameters (compositions and thicknesses of the constituent layers) based on combined analysis of the grown structures by low-temperature photoluminescence and X-ray diffractometry is developed. It is found that the parameters of the grown ZnSxSe1 − x/CdSe superlattices are close to their design values and the density of extended defects in the structures is low even though the structure thickness (∼300 nm) considerably exceeds the critical thickness for bulk II–VI layers with the same lattice-constant mismatch. More... »

PAGES

1000-1006

References to SciGraph publications

Journal

TITLE

Semiconductors

ISSUE

8

VOLUME

49

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782615080217

DOI

http://dx.doi.org/10.1134/s1063782615080217

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1013159548


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