Ontology type: schema:ScholarlyArticle
2015-08-02
AUTHORSA. M. Nadtochiy, S. A. Mintairov, N. A. Kalyuzhnyy, S. S. Rouvimov, Yu. M. Shernyakov, A. S. Payusov, M. V. Maximov, A. E. Zhukov
ABSTRACTHeterostructures with InGaAs quantum dots (QDs) are synthesized on vicinal GaAs (001) substrates. The photoluminescence (PL) spectra and threshold characteristics of edge-emitting QD lasers are studied in the temperature range 10-400 K. The structural properties of QDs are examined by transmission electron microscopy. Analysis of the PL spectra demonstrates the bimodality of the QD array, which leads to an unusual temperature behavior of the PL spectra and threshold current density. A model of the population of a bimodal QD array by carriers, describing the observed phenomena, is considered. More... »
PAGES1090-1094
http://scigraph.springernature.com/pub.10.1134/s106378261508014x
DOIhttp://dx.doi.org/10.1134/s106378261508014x
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