Emission intensity of the λ = 1.54 μm line in ZnO films grown by magnetron sputtering, diffusion doped with Ce, ... View Full Text


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Article Info

DATE

2015-08-02

AUTHORS

M. M. Mezdrogina, M. V. Eremenko, A. N. Smirnov, V. N. Petrov, E. I. Terukov

ABSTRACT

The effect of the Er3+-ion excitation type on the photoluminescence spectra of crystalline ZnO(ZnO〈Ce, Yb, Er〉) films is determined in the cases of resonant (λ = 532 nm, Er3+-ion transition from 4S3/2, 2H11/2 levels to 4I15/2) and non-resonant (λ = 325 nm, in the region near the ZnO band-edge emission) excitation. It is shown that resonant excitation gives rise to lines with various emission intensities, characteristic of the Er3+-ion intracenter 4f transition with λ = 1535 nm when doping crystalline ZnO films with three rare-earth ions (REIs, Ce, Yb, Er) or with two impurities (Ce, Er) or (Er, Yb), independently of the measurement temperature (T = 83 and 300 K). The doping of crystalline ZnO films with rare-earth impurities (Ce, Yb, Er) leads to the efficient transfer of energy to REIs, a consequence of which is the intense emission of an Er3+ ion in the IR spectral region at λmax = 1535 nm. The kick-out diffusion mechanism is used upon the sequential introduction of impurities into semiconductor matrices and during the postgrowth annealing of the ZnO films under study. The crystalline ZnO films doped with Ce, Yb, Er also exhibit intense emission in the visible spectral region at room temperature, which makes them promising materials for optoelectronics. More... »

PAGES

992-999

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782615080138

DOI

http://dx.doi.org/10.1134/s1063782615080138

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1053666327


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0204", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Condensed Matter Physics", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0206", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Quantum Physics", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Mezdrogina", 
        "givenName": "M. M.", 
        "id": "sg:person.014240764435.25", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014240764435.25"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Eremenko", 
        "givenName": "M. V.", 
        "id": "sg:person.010725035161.80", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010725035161.80"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Smirnov", 
        "givenName": "A. N.", 
        "id": "sg:person.014243650571.24", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014243650571.24"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Petrov", 
        "givenName": "V. N.", 
        "id": "sg:person.010547461051.73", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010547461051.73"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Saint Petersburg Electrotechnical University \u201cLETI\u201d, ul. Prof. Popova 5, 197376, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.9905.5", 
          "name": [
            "Ioffe Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia", 
            "Saint Petersburg Electrotechnical University \u201cLETI\u201d, ul. Prof. Popova 5, 197376, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Terukov", 
        "givenName": "E. I.", 
        "id": "sg:person.016615421175.12", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016615421175.12"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1007/s11664-006-0258-y", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1033260240", 
          "https://doi.org/10.1007/s11664-006-0258-y"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063783412060248", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1038872603", 
          "https://doi.org/10.1134/s1063783412060248"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782612070135", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1032082329", 
          "https://doi.org/10.1134/s1063782612070135"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2015-08-02", 
    "datePublishedReg": "2015-08-02", 
    "description": "The effect of the Er3+-ion excitation type on the photoluminescence spectra of crystalline ZnO(ZnO\u3008Ce, Yb, Er\u3009) films is determined in the cases of resonant (\u03bb = 532 nm, Er3+-ion transition from 4S3/2, 2H11/2 levels to 4I15/2) and non-resonant (\u03bb = 325 nm, in the region near the ZnO band-edge emission) excitation. It is shown that resonant excitation gives rise to lines with various emission intensities, characteristic of the Er3+-ion intracenter 4f transition with \u03bb = 1535 nm when doping crystalline ZnO films with three rare-earth ions (REIs, Ce, Yb, Er) or with two impurities (Ce, Er) or (Er, Yb), independently of the measurement temperature (T = 83 and 300 K). The doping of crystalline ZnO films with rare-earth impurities (Ce, Yb, Er) leads to the efficient transfer of energy to REIs, a consequence of which is the intense emission of an Er3+ ion in the IR spectral region at \u03bbmax = 1535 nm. The kick-out diffusion mechanism is used upon the sequential introduction of impurities into semiconductor matrices and during the postgrowth annealing of the ZnO films under study. The crystalline ZnO films doped with Ce, Yb, Er also exhibit intense emission in the visible spectral region at room temperature, which makes them promising materials for optoelectronics.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063782615080138", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "8", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "49"
      }
    ], 
    "keywords": [
      "crystalline ZnO films", 
      "ZnO films", 
      "magnetron sputtering", 
      "promising material", 
      "postgrowth annealing", 
      "semiconductor matrix", 
      "films", 
      "measurement temperature", 
      "excitation type", 
      "emission intensity", 
      "diffusion mechanism", 
      "room temperature", 
      "spectral region", 
      "visible spectral region", 
      "IR spectral region", 
      "photoluminescence spectra", 
      "impurities", 
      "intense emission", 
      "temperature", 
      "non-resonant excitation", 
      "sputtering", 
      "emission", 
      "annealing", 
      "optoelectronics", 
      "doping", 
      "efficient transfer", 
      "resonant excitation", 
      "resonant", 
      "excitation", 
      "rare earth ions", 
      "materials", 
      "crystalline", 
      "diffusion", 
      "energy", 
      "matrix", 
      "rare earth impurities", 
      "ions", 
      "Ce", 
      "transfer", 
      "intensity", 
      "region", 
      "REIS", 
      "lines", 
      "transition", 
      "kick", 
      "effect", 
      "spectra", 
      "mechanism", 
      "types", 
      "introduction", 
      "rise", 
      "sequential introduction", 
      "ER", 
      "cases", 
      "study", 
      "\u03bbmax", 
      "consequences"
    ], 
    "name": "Emission intensity of the \u03bb = 1.54 \u03bcm line in ZnO films grown by magnetron sputtering, diffusion doped with Ce, Yb, Er", 
    "pagination": "992-999", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1053666327"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782615080138"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782615080138", 
      "https://app.dimensions.ai/details/publication/pub.1053666327"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-05-20T07:31", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220519/entities/gbq_results/article/article_678.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063782615080138"
  }
]
 

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This table displays all metadata directly associated to this object as RDF triples.

163 TRIPLES      22 PREDICATES      86 URIs      74 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782615080138 schema:about anzsrc-for:02
2 anzsrc-for:0204
3 anzsrc-for:0206
4 schema:author Na8c32af302834a0b8a37827f583bb537
5 schema:citation sg:pub.10.1007/s11664-006-0258-y
6 sg:pub.10.1134/s1063782612070135
7 sg:pub.10.1134/s1063783412060248
8 schema:datePublished 2015-08-02
9 schema:datePublishedReg 2015-08-02
10 schema:description The effect of the Er3+-ion excitation type on the photoluminescence spectra of crystalline ZnO(ZnO〈Ce, Yb, Er〉) films is determined in the cases of resonant (λ = 532 nm, Er3+-ion transition from 4S3/2, 2H11/2 levels to 4I15/2) and non-resonant (λ = 325 nm, in the region near the ZnO band-edge emission) excitation. It is shown that resonant excitation gives rise to lines with various emission intensities, characteristic of the Er3+-ion intracenter 4f transition with λ = 1535 nm when doping crystalline ZnO films with three rare-earth ions (REIs, Ce, Yb, Er) or with two impurities (Ce, Er) or (Er, Yb), independently of the measurement temperature (T = 83 and 300 K). The doping of crystalline ZnO films with rare-earth impurities (Ce, Yb, Er) leads to the efficient transfer of energy to REIs, a consequence of which is the intense emission of an Er3+ ion in the IR spectral region at λmax = 1535 nm. The kick-out diffusion mechanism is used upon the sequential introduction of impurities into semiconductor matrices and during the postgrowth annealing of the ZnO films under study. The crystalline ZnO films doped with Ce, Yb, Er also exhibit intense emission in the visible spectral region at room temperature, which makes them promising materials for optoelectronics.
11 schema:genre article
12 schema:inLanguage en
13 schema:isAccessibleForFree false
14 schema:isPartOf N2e93e58a8fef4112a24b3658c8edb028
15 N507e3cbca2e24f95a3f485a1c7faf6cf
16 sg:journal.1136692
17 schema:keywords Ce
18 ER
19 IR spectral region
20 REIS
21 ZnO films
22 annealing
23 cases
24 consequences
25 crystalline
26 crystalline ZnO films
27 diffusion
28 diffusion mechanism
29 doping
30 effect
31 efficient transfer
32 emission
33 emission intensity
34 energy
35 excitation
36 excitation type
37 films
38 impurities
39 intense emission
40 intensity
41 introduction
42 ions
43 kick
44 lines
45 magnetron sputtering
46 materials
47 matrix
48 measurement temperature
49 mechanism
50 non-resonant excitation
51 optoelectronics
52 photoluminescence spectra
53 postgrowth annealing
54 promising material
55 rare earth impurities
56 rare earth ions
57 region
58 resonant
59 resonant excitation
60 rise
61 room temperature
62 semiconductor matrix
63 sequential introduction
64 spectra
65 spectral region
66 sputtering
67 study
68 temperature
69 transfer
70 transition
71 types
72 visible spectral region
73 λmax
74 schema:name Emission intensity of the λ = 1.54 μm line in ZnO films grown by magnetron sputtering, diffusion doped with Ce, Yb, Er
75 schema:pagination 992-999
76 schema:productId N7b8077f10d2643b89f5d5206413d0d2c
77 Nff604781fcf444688af080dbd448f8e1
78 schema:sameAs https://app.dimensions.ai/details/publication/pub.1053666327
79 https://doi.org/10.1134/s1063782615080138
80 schema:sdDatePublished 2022-05-20T07:31
81 schema:sdLicense https://scigraph.springernature.com/explorer/license/
82 schema:sdPublisher Ne145079d02994910bf3af5e5d4950a11
83 schema:url https://doi.org/10.1134/s1063782615080138
84 sgo:license sg:explorer/license/
85 sgo:sdDataset articles
86 rdf:type schema:ScholarlyArticle
87 N2e93e58a8fef4112a24b3658c8edb028 schema:volumeNumber 49
88 rdf:type schema:PublicationVolume
89 N507e3cbca2e24f95a3f485a1c7faf6cf schema:issueNumber 8
90 rdf:type schema:PublicationIssue
91 N77582651e21343e1ace76c4f01690e71 rdf:first sg:person.010547461051.73
92 rdf:rest Na445f45683a14c7695ddea313f23fc0b
93 N7b8077f10d2643b89f5d5206413d0d2c schema:name dimensions_id
94 schema:value pub.1053666327
95 rdf:type schema:PropertyValue
96 Na445f45683a14c7695ddea313f23fc0b rdf:first sg:person.016615421175.12
97 rdf:rest rdf:nil
98 Na8c32af302834a0b8a37827f583bb537 rdf:first sg:person.014240764435.25
99 rdf:rest Nab8013c336f241e2acbcccb4f0a001fb
100 Nab8013c336f241e2acbcccb4f0a001fb rdf:first sg:person.010725035161.80
101 rdf:rest Ne03194fa25a84122b86386412e25e881
102 Ne03194fa25a84122b86386412e25e881 rdf:first sg:person.014243650571.24
103 rdf:rest N77582651e21343e1ace76c4f01690e71
104 Ne145079d02994910bf3af5e5d4950a11 schema:name Springer Nature - SN SciGraph project
105 rdf:type schema:Organization
106 Nff604781fcf444688af080dbd448f8e1 schema:name doi
107 schema:value 10.1134/s1063782615080138
108 rdf:type schema:PropertyValue
109 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
110 schema:name Physical Sciences
111 rdf:type schema:DefinedTerm
112 anzsrc-for:0204 schema:inDefinedTermSet anzsrc-for:
113 schema:name Condensed Matter Physics
114 rdf:type schema:DefinedTerm
115 anzsrc-for:0206 schema:inDefinedTermSet anzsrc-for:
116 schema:name Quantum Physics
117 rdf:type schema:DefinedTerm
118 sg:journal.1136692 schema:issn 1063-7826
119 1090-6479
120 schema:name Semiconductors
121 schema:publisher Pleiades Publishing
122 rdf:type schema:Periodical
123 sg:person.010547461051.73 schema:affiliation grid-institutes:grid.423485.c
124 schema:familyName Petrov
125 schema:givenName V. N.
126 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010547461051.73
127 rdf:type schema:Person
128 sg:person.010725035161.80 schema:affiliation grid-institutes:grid.423485.c
129 schema:familyName Eremenko
130 schema:givenName M. V.
131 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010725035161.80
132 rdf:type schema:Person
133 sg:person.014240764435.25 schema:affiliation grid-institutes:grid.423485.c
134 schema:familyName Mezdrogina
135 schema:givenName M. M.
136 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014240764435.25
137 rdf:type schema:Person
138 sg:person.014243650571.24 schema:affiliation grid-institutes:grid.423485.c
139 schema:familyName Smirnov
140 schema:givenName A. N.
141 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014243650571.24
142 rdf:type schema:Person
143 sg:person.016615421175.12 schema:affiliation grid-institutes:grid.9905.5
144 schema:familyName Terukov
145 schema:givenName E. I.
146 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016615421175.12
147 rdf:type schema:Person
148 sg:pub.10.1007/s11664-006-0258-y schema:sameAs https://app.dimensions.ai/details/publication/pub.1033260240
149 https://doi.org/10.1007/s11664-006-0258-y
150 rdf:type schema:CreativeWork
151 sg:pub.10.1134/s1063782612070135 schema:sameAs https://app.dimensions.ai/details/publication/pub.1032082329
152 https://doi.org/10.1134/s1063782612070135
153 rdf:type schema:CreativeWork
154 sg:pub.10.1134/s1063783412060248 schema:sameAs https://app.dimensions.ai/details/publication/pub.1038872603
155 https://doi.org/10.1134/s1063783412060248
156 rdf:type schema:CreativeWork
157 grid-institutes:grid.423485.c schema:alternateName Ioffe Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia
158 schema:name Ioffe Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia
159 rdf:type schema:Organization
160 grid-institutes:grid.9905.5 schema:alternateName Saint Petersburg Electrotechnical University “LETI”, ul. Prof. Popova 5, 197376, St. Petersburg, Russia
161 schema:name Ioffe Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia
162 Saint Petersburg Electrotechnical University “LETI”, ul. Prof. Popova 5, 197376, St. Petersburg, Russia
163 rdf:type schema:Organization
 




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