Improvement in the degradation resistance of silicon nanostructures by the deposition of diamond-like carbon films View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2015-08-02

AUTHORS

N. I. Klyui, M. A. Semenenko, I. M. Khatsevich, A. V. Makarov, A. N. Kabaldin, F. V. Fomovskii, Wei Han

ABSTRACT

It is established that the deposition of a diamond-like film onto a structure with silicon nanoclusters in a silicon dioxide matrix yields an increase in the long-wavelength photoluminescence intensity of silicon nanoclusters due to the passivation of active-recombination centers with hydrogen and a shift of the photoluminescence peak to the region of higher photosensitivity of silicon-based solar cells. It is also shown that, due to the deposited diamond-like film, the resistance of such a structure to degradation upon exposure to γ radiation is improved, which is also defined by the effect of the passivation of radiation-induced activerecombination centers by hydrogen that is released from the films during treatment. More... »

PAGES

1030-1034

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782615080126

DOI

http://dx.doi.org/10.1134/s1063782615080126

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1027599702


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