Capacitance-voltage characteristics of (Al/Ti)/Al2O3/n-GaN MIS structures View Full Text


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Article Info

DATE

2015-08-02

AUTHORS

P. A. Ivanov, A. S. Potapov, A. E. Nikolaev, V. V. Lundin, A. V. Sakharov, A. F. Tsatsulnikov, A. V. Afanas’ev, A. A. Romanov, E. V. Osachev

ABSTRACT

The capacitance-voltage characteristics of (Al/Ti)/Al2O3/n-GaN metal—insulator-semiconductor (MIS) structures are measured and analyzed. n-Type GaN films are grown on sapphire (0001) substrates by the metal-organic chemical vapor deposition method. An aluminum-oxide layer with a thickness of 60 nm is deposited onto the surface of GaN by the method of atomic-layer deposition from the gas phase. Metallic contacts are deposited by the electron-beam evaporation of titanium and aluminum in vacuum. According to the measurement results, the breakdown-field strength of the oxide, its dielectric constant, and the integrated electron density of states at the oxide-semiconductor interface are 5 × 106 V/cm, 7.5, and 3 × 1012 cm−2, respectively. More... »

PAGES

1035-1038

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782615080096

DOI

http://dx.doi.org/10.1134/s1063782615080096

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1052143136


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