Ontology type: schema:ScholarlyArticle
2015-07-01
AUTHORSA. E. Zhukov, L. V. Asryan, E. S. Semenova, F. I. Zubov, N. V. Kryzhanovskaya, M. V. Maximov
ABSTRACTBand offsets at the heterointerface are calculated for various combinations of InAlGaAs/AlGaAs heteropairs that can be synthesized on GaAs substrates in the layer-by-layer pseudomorphic growth mode. Patterns which make it possible to obtain an asymmetric barrier layer providing the almost obstruction-free transport of holes and the highest possible barrier height for electrons are found. The optimal compositions of both compounds (In0.232Al0.594Ga0.174As/Al0.355Ga0.645As) at which the flux of electrons across the barrier is at a minimum are determined with consideration for the critical thickness of the indium-containing quaternary solid solution. More... »
PAGES935-938
http://scigraph.springernature.com/pub.10.1134/s1063782615070258
DOIhttp://dx.doi.org/10.1134/s1063782615070258
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