On the optimization of asymmetric barrier layers in InAlGaAs/AlGaAs laser heterostructures on GaAs substrates View Full Text


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Article Info

DATE

2015-07-01

AUTHORS

A. E. Zhukov, L. V. Asryan, E. S. Semenova, F. I. Zubov, N. V. Kryzhanovskaya, M. V. Maximov

ABSTRACT

Band offsets at the heterointerface are calculated for various combinations of InAlGaAs/AlGaAs heteropairs that can be synthesized on GaAs substrates in the layer-by-layer pseudomorphic growth mode. Patterns which make it possible to obtain an asymmetric barrier layer providing the almost obstruction-free transport of holes and the highest possible barrier height for electrons are found. The optimal compositions of both compounds (In0.232Al0.594Ga0.174As/Al0.355Ga0.645As) at which the flux of electrons across the barrier is at a minimum are determined with consideration for the critical thickness of the indium-containing quaternary solid solution. More... »

PAGES

935-938

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782615070258

DOI

http://dx.doi.org/10.1134/s1063782615070258

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1000974387


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