Effect of impurity impact ionization on the dynamic characteristics of 4H-SiC p+–n––n+ diodes at low temperatures (77 K) View Full Text


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Article Info

DATE

2015-07-01

AUTHORS

P. A. Ivanov, A. S. Potapov, T. P. Samsonova

ABSTRACT

The low temperature (77 K) transient switch-on characteristics of 4H-SiC p+–n––n+ diodes are measured in the pulse mode. Using a simple analytical model, the effect of impurity breakdown in a heavily doped p+-type emitter on the current rise dynamics after applying high-amplitude forward-bias pulses to the diode is explained.

PAGES

976-979

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782615070118

DOI

http://dx.doi.org/10.1134/s1063782615070118

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1028493101


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