Ontology type: schema:ScholarlyArticle
2015-07-01
AUTHORSP. A. Ivanov, A. S. Potapov, T. P. Samsonova
ABSTRACTThe low temperature (77 K) transient switch-on characteristics of 4H-SiC p+–n––n+ diodes are measured in the pulse mode. Using a simple analytical model, the effect of impurity breakdown in a heavily doped p+-type emitter on the current rise dynamics after applying high-amplitude forward-bias pulses to the diode is explained.
PAGES976-979
http://scigraph.springernature.com/pub.10.1134/s1063782615070118
DOIhttp://dx.doi.org/10.1134/s1063782615070118
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