Resistance of 4H-SiC Schottky barriers at high forward-current densities View Full Text


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Article Info

DATE

2015-07-01

AUTHORS

P. A. Ivanov, T. P. Samsonova, N. D. Il’inskaya, O. Yu. Serebrennikova, O. I. Kon’kov, A. S. Potapov

ABSTRACT

The resistance of Schottky barriers based on 4H-SiC is experimentally determined at high forward-current densities. The measured resistance is found to be significantly higher than the resistance predicted by classical mechanisms of electron transport in Schottky contacts. An assumption concerning the crucial contribution of the tunnel-transparent intermediate oxide layer between the metal and semiconductor to the barrier resistance is proposed and partially justified. More... »

PAGES

930-934

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782615070106

DOI

http://dx.doi.org/10.1134/s1063782615070106

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1002021775


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