On the density of states of disordered epitaxial graphene View Full Text


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Article Info

DATE

2015-05

AUTHORS

S. Yu. Davydov

ABSTRACT

The study is concerned with two types of disordered epitaxial graphene: (i) graphene with randomly located carbon vacancies and (ii) structurally amorphous graphene. The former type is considered in the coherent potential approximation, and for the latter type, a model of the density of states is proposed. The effects of two types of substrates, specifically, metal and semiconductor substrates are taken into account. The specific features of the density of states of epitaxial graphene at the Dirac point and the edges of the continuous spectrum are analyzed. It is shown that vacancies in epitaxial graphene formed on the metal substrate bring about logarithmic nulling of the density of states of graphene at the Dirac point and the edges of the continuous spectrum. If the Dirac point corresponds to the middle of the band gap of the semiconductor substrate, the linear trend of the density of states to zero in the vicinity of the Dirac point in defect-free graphene transforms into a logarithmic decrease in the presence of vacancies. In both cases, the graphene-substrate interaction is assumed to be weak (quasi-free graphene). In the study of amorphous epitaxial graphene, a simple model of free amorphous graphene is proposed as the initial model, in which account is taken of the nonzero density of states at the Dirac point, and then the interaction of the graphene sheet with the substrate is taken into consideration. It is shown that, near the Dirac point, the quadratic behavior of the density of states of free amorphous graphene transforms into a linear dependence for amorphous epitaxial graphene. In the study, the density of states of free graphene corresponds to the low-energy approximation of the electron spectrum. More... »

PAGES

615-620

Journal

TITLE

Semiconductors

ISSUE

5

VOLUME

49

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782615050061

DOI

http://dx.doi.org/10.1134/s1063782615050061

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1044899656


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "ITMO University", 
          "id": "https://www.grid.ac/institutes/grid.35915.3b", 
          "name": [
            "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
            "St. Petersburg National Research University of Information Technologies, Mechanics and Optics, 197101, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Davydov", 
        "givenName": "S. Yu.", 
        "id": "sg:person.015502102367.83", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015502102367.83"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1134/s1063782614010084", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1001310274", 
          "https://doi.org/10.1134/s1063782614010084"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063784214040082", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1008693896", 
          "https://doi.org/10.1134/s1063784214040082"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s106378420805023x", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1009962047", 
          "https://doi.org/10.1134/s106378420805023x"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063783408070111", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1009993370", 
          "https://doi.org/10.1134/s1063783408070111"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782611050083", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1014662327", 
          "https://doi.org/10.1134/s1063782611050083"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782613010090", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1023755683", 
          "https://doi.org/10.1134/s1063782613010090"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.3460809", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1032551011"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063785013010343", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1038104894", 
          "https://doi.org/10.1134/s1063785013010343"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063783413060036", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1042674838", 
          "https://doi.org/10.1134/s1063783413060036"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevb.82.155462", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1048741043"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevb.82.155462", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1048741043"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/revmodphys.81.109", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1050408744"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/revmodphys.81.109", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1050408744"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevb.73.125411", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1051404887"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevb.73.125411", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1051404887"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrev.124.41", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060424736"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrev.124.41", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060424736"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevb.13.2553", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060520821"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1103/physrevb.13.2553", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1060520821"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1143/ptp.46.77", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1063134112"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2015-05", 
    "datePublishedReg": "2015-05-01", 
    "description": "The study is concerned with two types of disordered epitaxial graphene: (i) graphene with randomly located carbon vacancies and (ii) structurally amorphous graphene. The former type is considered in the coherent potential approximation, and for the latter type, a model of the density of states is proposed. The effects of two types of substrates, specifically, metal and semiconductor substrates are taken into account. The specific features of the density of states of epitaxial graphene at the Dirac point and the edges of the continuous spectrum are analyzed. It is shown that vacancies in epitaxial graphene formed on the metal substrate bring about logarithmic nulling of the density of states of graphene at the Dirac point and the edges of the continuous spectrum. If the Dirac point corresponds to the middle of the band gap of the semiconductor substrate, the linear trend of the density of states to zero in the vicinity of the Dirac point in defect-free graphene transforms into a logarithmic decrease in the presence of vacancies. In both cases, the graphene-substrate interaction is assumed to be weak (quasi-free graphene). In the study of amorphous epitaxial graphene, a simple model of free amorphous graphene is proposed as the initial model, in which account is taken of the nonzero density of states at the Dirac point, and then the interaction of the graphene sheet with the substrate is taken into consideration. It is shown that, near the Dirac point, the quadratic behavior of the density of states of free amorphous graphene transforms into a linear dependence for amorphous epitaxial graphene. In the study, the density of states of free graphene corresponds to the low-energy approximation of the electron spectrum.", 
    "genre": "research_article", 
    "id": "sg:pub.10.1134/s1063782615050061", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "5", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "49"
      }
    ], 
    "name": "On the density of states of disordered epitaxial graphene", 
    "pagination": "615-620", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "d5dee9df462da5d494df6dd8ceed652d7e5e66ed09cf825b2769a3be28017a61"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782615050061"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1044899656"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782615050061", 
      "https://app.dimensions.ai/details/publication/pub.1044899656"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-10T14:59", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000001_0000000264/records_8663_00000507.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "http://link.springer.com/10.1134%2FS1063782615050061"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

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This table displays all metadata directly associated to this object as RDF triples.

115 TRIPLES      21 PREDICATES      42 URIs      19 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782615050061 schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author Ncc637a32ef2645058b061400613e2084
4 schema:citation sg:pub.10.1134/s1063782611050083
5 sg:pub.10.1134/s1063782613010090
6 sg:pub.10.1134/s1063782614010084
7 sg:pub.10.1134/s1063783408070111
8 sg:pub.10.1134/s1063783413060036
9 sg:pub.10.1134/s106378420805023x
10 sg:pub.10.1134/s1063784214040082
11 sg:pub.10.1134/s1063785013010343
12 https://doi.org/10.1063/1.3460809
13 https://doi.org/10.1103/physrev.124.41
14 https://doi.org/10.1103/physrevb.13.2553
15 https://doi.org/10.1103/physrevb.73.125411
16 https://doi.org/10.1103/physrevb.82.155462
17 https://doi.org/10.1103/revmodphys.81.109
18 https://doi.org/10.1143/ptp.46.77
19 schema:datePublished 2015-05
20 schema:datePublishedReg 2015-05-01
21 schema:description The study is concerned with two types of disordered epitaxial graphene: (i) graphene with randomly located carbon vacancies and (ii) structurally amorphous graphene. The former type is considered in the coherent potential approximation, and for the latter type, a model of the density of states is proposed. The effects of two types of substrates, specifically, metal and semiconductor substrates are taken into account. The specific features of the density of states of epitaxial graphene at the Dirac point and the edges of the continuous spectrum are analyzed. It is shown that vacancies in epitaxial graphene formed on the metal substrate bring about logarithmic nulling of the density of states of graphene at the Dirac point and the edges of the continuous spectrum. If the Dirac point corresponds to the middle of the band gap of the semiconductor substrate, the linear trend of the density of states to zero in the vicinity of the Dirac point in defect-free graphene transforms into a logarithmic decrease in the presence of vacancies. In both cases, the graphene-substrate interaction is assumed to be weak (quasi-free graphene). In the study of amorphous epitaxial graphene, a simple model of free amorphous graphene is proposed as the initial model, in which account is taken of the nonzero density of states at the Dirac point, and then the interaction of the graphene sheet with the substrate is taken into consideration. It is shown that, near the Dirac point, the quadratic behavior of the density of states of free amorphous graphene transforms into a linear dependence for amorphous epitaxial graphene. In the study, the density of states of free graphene corresponds to the low-energy approximation of the electron spectrum.
22 schema:genre research_article
23 schema:inLanguage en
24 schema:isAccessibleForFree false
25 schema:isPartOf N1d745b09c1164bbe88cf4251ab35b849
26 Nd083c016f88b47818bc5057e717f86ee
27 sg:journal.1136692
28 schema:name On the density of states of disordered epitaxial graphene
29 schema:pagination 615-620
30 schema:productId N553b99cdd5094b05b59a29112cbc5631
31 N70be35c462334c82b3164a44dcb3db2a
32 Nce378afad2dd428faccc7ec5b310da0e
33 schema:sameAs https://app.dimensions.ai/details/publication/pub.1044899656
34 https://doi.org/10.1134/s1063782615050061
35 schema:sdDatePublished 2019-04-10T14:59
36 schema:sdLicense https://scigraph.springernature.com/explorer/license/
37 schema:sdPublisher Ncb30f791994f409da92c8a064d48079a
38 schema:url http://link.springer.com/10.1134%2FS1063782615050061
39 sgo:license sg:explorer/license/
40 sgo:sdDataset articles
41 rdf:type schema:ScholarlyArticle
42 N1d745b09c1164bbe88cf4251ab35b849 schema:volumeNumber 49
43 rdf:type schema:PublicationVolume
44 N553b99cdd5094b05b59a29112cbc5631 schema:name dimensions_id
45 schema:value pub.1044899656
46 rdf:type schema:PropertyValue
47 N70be35c462334c82b3164a44dcb3db2a schema:name readcube_id
48 schema:value d5dee9df462da5d494df6dd8ceed652d7e5e66ed09cf825b2769a3be28017a61
49 rdf:type schema:PropertyValue
50 Ncb30f791994f409da92c8a064d48079a schema:name Springer Nature - SN SciGraph project
51 rdf:type schema:Organization
52 Ncc637a32ef2645058b061400613e2084 rdf:first sg:person.015502102367.83
53 rdf:rest rdf:nil
54 Nce378afad2dd428faccc7ec5b310da0e schema:name doi
55 schema:value 10.1134/s1063782615050061
56 rdf:type schema:PropertyValue
57 Nd083c016f88b47818bc5057e717f86ee schema:issueNumber 5
58 rdf:type schema:PublicationIssue
59 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
60 schema:name Engineering
61 rdf:type schema:DefinedTerm
62 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
63 schema:name Materials Engineering
64 rdf:type schema:DefinedTerm
65 sg:journal.1136692 schema:issn 1063-7826
66 1090-6479
67 schema:name Semiconductors
68 rdf:type schema:Periodical
69 sg:person.015502102367.83 schema:affiliation https://www.grid.ac/institutes/grid.35915.3b
70 schema:familyName Davydov
71 schema:givenName S. Yu.
72 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015502102367.83
73 rdf:type schema:Person
74 sg:pub.10.1134/s1063782611050083 schema:sameAs https://app.dimensions.ai/details/publication/pub.1014662327
75 https://doi.org/10.1134/s1063782611050083
76 rdf:type schema:CreativeWork
77 sg:pub.10.1134/s1063782613010090 schema:sameAs https://app.dimensions.ai/details/publication/pub.1023755683
78 https://doi.org/10.1134/s1063782613010090
79 rdf:type schema:CreativeWork
80 sg:pub.10.1134/s1063782614010084 schema:sameAs https://app.dimensions.ai/details/publication/pub.1001310274
81 https://doi.org/10.1134/s1063782614010084
82 rdf:type schema:CreativeWork
83 sg:pub.10.1134/s1063783408070111 schema:sameAs https://app.dimensions.ai/details/publication/pub.1009993370
84 https://doi.org/10.1134/s1063783408070111
85 rdf:type schema:CreativeWork
86 sg:pub.10.1134/s1063783413060036 schema:sameAs https://app.dimensions.ai/details/publication/pub.1042674838
87 https://doi.org/10.1134/s1063783413060036
88 rdf:type schema:CreativeWork
89 sg:pub.10.1134/s106378420805023x schema:sameAs https://app.dimensions.ai/details/publication/pub.1009962047
90 https://doi.org/10.1134/s106378420805023x
91 rdf:type schema:CreativeWork
92 sg:pub.10.1134/s1063784214040082 schema:sameAs https://app.dimensions.ai/details/publication/pub.1008693896
93 https://doi.org/10.1134/s1063784214040082
94 rdf:type schema:CreativeWork
95 sg:pub.10.1134/s1063785013010343 schema:sameAs https://app.dimensions.ai/details/publication/pub.1038104894
96 https://doi.org/10.1134/s1063785013010343
97 rdf:type schema:CreativeWork
98 https://doi.org/10.1063/1.3460809 schema:sameAs https://app.dimensions.ai/details/publication/pub.1032551011
99 rdf:type schema:CreativeWork
100 https://doi.org/10.1103/physrev.124.41 schema:sameAs https://app.dimensions.ai/details/publication/pub.1060424736
101 rdf:type schema:CreativeWork
102 https://doi.org/10.1103/physrevb.13.2553 schema:sameAs https://app.dimensions.ai/details/publication/pub.1060520821
103 rdf:type schema:CreativeWork
104 https://doi.org/10.1103/physrevb.73.125411 schema:sameAs https://app.dimensions.ai/details/publication/pub.1051404887
105 rdf:type schema:CreativeWork
106 https://doi.org/10.1103/physrevb.82.155462 schema:sameAs https://app.dimensions.ai/details/publication/pub.1048741043
107 rdf:type schema:CreativeWork
108 https://doi.org/10.1103/revmodphys.81.109 schema:sameAs https://app.dimensions.ai/details/publication/pub.1050408744
109 rdf:type schema:CreativeWork
110 https://doi.org/10.1143/ptp.46.77 schema:sameAs https://app.dimensions.ai/details/publication/pub.1063134112
111 rdf:type schema:CreativeWork
112 https://www.grid.ac/institutes/grid.35915.3b schema:alternateName ITMO University
113 schema:name Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
114 St. Petersburg National Research University of Information Technologies, Mechanics and Optics, 197101, St. Petersburg, Russia
115 rdf:type schema:Organization
 




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