Irradiation of 4H-SiC UV detectors with heavy ions View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2015-04-16

AUTHORS

E. V. Kalinina, A. A. Lebedev, E. Bogdanova, B. Berenquier, L. Ottaviani, G. N. Violina, V. A. Skuratov

ABSTRACT

Ultraviolet (UV) photodetectors based on Schottky barriers to 4H-SiC are formed on lightly doped n-type epitaxial layers grown by the chemical vapor deposition method on commercial substrates. The diode structures are irradiated at 25°C by 167-MeV Xe ions with a mass of 131 amu at a fluence of 6 × 109 cm−2. Comparative studies of the optical and electrical properties of as-grown and irradiated structures with Schottky barriers are carried out in the temperature range 23–180°C. The specific features of changes in the photosensitivity and electrical characteristics of the detector structures are accounted for by the capture of photogenerated carriers into traps formed due to fluctuations of the conduction-band bottom and valence-band top, with subsequent thermal dissociation. More... »

PAGES

540-546

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782615040132

DOI

http://dx.doi.org/10.1134/s1063782615040132

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1041215484


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0299", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Other Physical Sciences", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kalinina", 
        "givenName": "E. V.", 
        "id": "sg:person.011173133637.63", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011173133637.63"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lebedev", 
        "givenName": "A. A.", 
        "id": "sg:person.011264364575.18", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011264364575.18"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Bogdanova", 
        "givenName": "E.", 
        "id": "sg:person.012556446371.01", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012556446371.01"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "IM2NP, CNRS UMR 7334, Aix Marseille Universit\u00e9, OPTO-PV, Marseille, France", 
          "id": "http://www.grid.ac/institutes/grid.496914.7", 
          "name": [
            "IM2NP, CNRS UMR 7334, Aix Marseille Universit\u00e9, OPTO-PV, Marseille, France"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Berenquier", 
        "givenName": "B.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "IM2NP, CNRS UMR 7334, Aix Marseille Universit\u00e9, OPTO-PV, Marseille, France", 
          "id": "http://www.grid.ac/institutes/grid.496914.7", 
          "name": [
            "IM2NP, CNRS UMR 7334, Aix Marseille Universit\u00e9, OPTO-PV, Marseille, France"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Ottaviani", 
        "givenName": "L.", 
        "id": "sg:person.016452614637.14", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016452614637.14"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "St. Petersburg State Electrotechnical University LETI, 197376, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.15447.33", 
          "name": [
            "St. Petersburg State Electrotechnical University LETI, 197376, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Violina", 
        "givenName": "G. N.", 
        "id": "sg:person.014463500425.29", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014463500425.29"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Joint Institute for Nuclear Research, 141980, Dubna, Moscow oblast, Russia", 
          "id": "http://www.grid.ac/institutes/grid.33762.33", 
          "name": [
            "Joint Institute for Nuclear Research, 141980, Dubna, Moscow oblast, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Skuratov", 
        "givenName": "V. A.", 
        "id": "sg:person.011006701425.72", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011006701425.72"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1557/proc-650-r3.19", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1067950188", 
          "https://doi.org/10.1557/proc-650-r3.19"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782614020146", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1011514516", 
          "https://doi.org/10.1134/s1063782614020146"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782607040021", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1024225123", 
          "https://doi.org/10.1134/s1063782607040021"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/1.1808826", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1023933297", 
          "https://doi.org/10.1134/1.1808826"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063784208010155", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1052726982", 
          "https://doi.org/10.1134/s1063784208010155"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/1.1610111", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1044016853", 
          "https://doi.org/10.1134/1.1610111"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782607070019", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1020572044", 
          "https://doi.org/10.1134/s1063782607070019"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1557/jmr.2011.216", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1004615319", 
          "https://doi.org/10.1557/jmr.2011.216"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2015-04-16", 
    "datePublishedReg": "2015-04-16", 
    "description": "Ultraviolet (UV) photodetectors based on Schottky barriers to 4H-SiC are formed on lightly doped n-type epitaxial layers grown by the chemical vapor deposition method on commercial substrates. The diode structures are irradiated at 25\u00b0C by 167-MeV Xe ions with a mass of 131 amu at a fluence of 6 \u00d7 109 cm\u22122. Comparative studies of the optical and electrical properties of as-grown and irradiated structures with Schottky barriers are carried out in the temperature range 23\u2013180\u00b0C. The specific features of changes in the photosensitivity and electrical characteristics of the detector structures are accounted for by the capture of photogenerated carriers into traps formed due to fluctuations of the conduction-band bottom and valence-band top, with subsequent thermal dissociation.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063782615040132", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "4", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "49"
      }
    ], 
    "keywords": [
      "Schottky barrier", 
      "type epitaxial layer", 
      "chemical vapor deposition method", 
      "vapor deposition method", 
      "ultraviolet photodetectors", 
      "electrical characteristics", 
      "electrical properties", 
      "epitaxial layers", 
      "deposition method", 
      "diode structure", 
      "irradiated structure", 
      "conduction-band bottom", 
      "temperature range 23", 
      "detector structure", 
      "valence-band top", 
      "thermal dissociation", 
      "commercial substrate", 
      "photodetectors", 
      "range 23", 
      "layer", 
      "structure", 
      "UV detector", 
      "substrate", 
      "properties", 
      "bottom", 
      "Xe ions", 
      "fluence", 
      "specific features", 
      "top", 
      "subsequent thermal dissociation", 
      "heavy ions", 
      "comparative study", 
      "characteristics", 
      "capture", 
      "fluctuations", 
      "ions", 
      "carriers", 
      "irradiation", 
      "method", 
      "barriers", 
      "photosensitivity", 
      "detector", 
      "traps", 
      "mass", 
      "amu", 
      "features", 
      "study", 
      "changes", 
      "dissociation"
    ], 
    "name": "Irradiation of 4H-SiC UV detectors with heavy ions", 
    "pagination": "540-546", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1041215484"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782615040132"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782615040132", 
      "https://app.dimensions.ai/details/publication/pub.1041215484"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2021-12-01T19:34", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20211201/entities/gbq_results/article/article_675.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063782615040132"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

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This table displays all metadata directly associated to this object as RDF triples.

189 TRIPLES      22 PREDICATES      82 URIs      66 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782615040132 schema:about anzsrc-for:02
2 anzsrc-for:0299
3 schema:author N67996ab064574778b52da217ffba2e46
4 schema:citation sg:pub.10.1134/1.1610111
5 sg:pub.10.1134/1.1808826
6 sg:pub.10.1134/s1063782607040021
7 sg:pub.10.1134/s1063782607070019
8 sg:pub.10.1134/s1063782614020146
9 sg:pub.10.1134/s1063784208010155
10 sg:pub.10.1557/jmr.2011.216
11 sg:pub.10.1557/proc-650-r3.19
12 schema:datePublished 2015-04-16
13 schema:datePublishedReg 2015-04-16
14 schema:description Ultraviolet (UV) photodetectors based on Schottky barriers to 4H-SiC are formed on lightly doped n-type epitaxial layers grown by the chemical vapor deposition method on commercial substrates. The diode structures are irradiated at 25°C by 167-MeV Xe ions with a mass of 131 amu at a fluence of 6 × 109 cm−2. Comparative studies of the optical and electrical properties of as-grown and irradiated structures with Schottky barriers are carried out in the temperature range 23–180°C. The specific features of changes in the photosensitivity and electrical characteristics of the detector structures are accounted for by the capture of photogenerated carriers into traps formed due to fluctuations of the conduction-band bottom and valence-band top, with subsequent thermal dissociation.
15 schema:genre article
16 schema:inLanguage en
17 schema:isAccessibleForFree false
18 schema:isPartOf N2eb1efc751154c4d88fceb22ed80c5b0
19 Nb053c3225f474224bb8ab5f101c45f85
20 sg:journal.1136692
21 schema:keywords Schottky barrier
22 UV detector
23 Xe ions
24 amu
25 barriers
26 bottom
27 capture
28 carriers
29 changes
30 characteristics
31 chemical vapor deposition method
32 commercial substrate
33 comparative study
34 conduction-band bottom
35 deposition method
36 detector
37 detector structure
38 diode structure
39 dissociation
40 electrical characteristics
41 electrical properties
42 epitaxial layers
43 features
44 fluctuations
45 fluence
46 heavy ions
47 ions
48 irradiated structure
49 irradiation
50 layer
51 mass
52 method
53 photodetectors
54 photosensitivity
55 properties
56 range 23
57 specific features
58 structure
59 study
60 subsequent thermal dissociation
61 substrate
62 temperature range 23
63 thermal dissociation
64 top
65 traps
66 type epitaxial layer
67 ultraviolet photodetectors
68 valence-band top
69 vapor deposition method
70 schema:name Irradiation of 4H-SiC UV detectors with heavy ions
71 schema:pagination 540-546
72 schema:productId N4d5c292571e14131a3d07144d70f12e8
73 Nac2f913fb01b482d8ad74c453b273075
74 schema:sameAs https://app.dimensions.ai/details/publication/pub.1041215484
75 https://doi.org/10.1134/s1063782615040132
76 schema:sdDatePublished 2021-12-01T19:34
77 schema:sdLicense https://scigraph.springernature.com/explorer/license/
78 schema:sdPublisher Ne2c329ca166c4f0cba52615d01c9dc13
79 schema:url https://doi.org/10.1134/s1063782615040132
80 sgo:license sg:explorer/license/
81 sgo:sdDataset articles
82 rdf:type schema:ScholarlyArticle
83 N0ab2878e2f8c4b4baf94e341acce38fe rdf:first sg:person.012556446371.01
84 rdf:rest N4f2c9d8c3a5f46caa59085220017f0dd
85 N2eb1efc751154c4d88fceb22ed80c5b0 schema:issueNumber 4
86 rdf:type schema:PublicationIssue
87 N4d5c292571e14131a3d07144d70f12e8 schema:name dimensions_id
88 schema:value pub.1041215484
89 rdf:type schema:PropertyValue
90 N4f2c9d8c3a5f46caa59085220017f0dd rdf:first N983c34e9f45e426d8aec0be84246285a
91 rdf:rest Nc91844367502482889c836db8c0850dc
92 N5cd039a6c8ed4270b240396f64a5c145 rdf:first sg:person.011006701425.72
93 rdf:rest rdf:nil
94 N67996ab064574778b52da217ffba2e46 rdf:first sg:person.011173133637.63
95 rdf:rest Nc7427003e4ed43cda652a76efe8f76a3
96 N983c34e9f45e426d8aec0be84246285a schema:affiliation grid-institutes:grid.496914.7
97 schema:familyName Berenquier
98 schema:givenName B.
99 rdf:type schema:Person
100 Nac2f913fb01b482d8ad74c453b273075 schema:name doi
101 schema:value 10.1134/s1063782615040132
102 rdf:type schema:PropertyValue
103 Nb053c3225f474224bb8ab5f101c45f85 schema:volumeNumber 49
104 rdf:type schema:PublicationVolume
105 Nb211c899f5b14792bf9e7f0df2b559e1 rdf:first sg:person.014463500425.29
106 rdf:rest N5cd039a6c8ed4270b240396f64a5c145
107 Nc7427003e4ed43cda652a76efe8f76a3 rdf:first sg:person.011264364575.18
108 rdf:rest N0ab2878e2f8c4b4baf94e341acce38fe
109 Nc91844367502482889c836db8c0850dc rdf:first sg:person.016452614637.14
110 rdf:rest Nb211c899f5b14792bf9e7f0df2b559e1
111 Ne2c329ca166c4f0cba52615d01c9dc13 schema:name Springer Nature - SN SciGraph project
112 rdf:type schema:Organization
113 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
114 schema:name Physical Sciences
115 rdf:type schema:DefinedTerm
116 anzsrc-for:0299 schema:inDefinedTermSet anzsrc-for:
117 schema:name Other Physical Sciences
118 rdf:type schema:DefinedTerm
119 sg:journal.1136692 schema:issn 1063-7826
120 1090-6479
121 schema:name Semiconductors
122 schema:publisher Pleiades Publishing
123 rdf:type schema:Periodical
124 sg:person.011006701425.72 schema:affiliation grid-institutes:grid.33762.33
125 schema:familyName Skuratov
126 schema:givenName V. A.
127 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011006701425.72
128 rdf:type schema:Person
129 sg:person.011173133637.63 schema:affiliation grid-institutes:grid.423485.c
130 schema:familyName Kalinina
131 schema:givenName E. V.
132 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011173133637.63
133 rdf:type schema:Person
134 sg:person.011264364575.18 schema:affiliation grid-institutes:grid.423485.c
135 schema:familyName Lebedev
136 schema:givenName A. A.
137 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011264364575.18
138 rdf:type schema:Person
139 sg:person.012556446371.01 schema:affiliation grid-institutes:grid.423485.c
140 schema:familyName Bogdanova
141 schema:givenName E.
142 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012556446371.01
143 rdf:type schema:Person
144 sg:person.014463500425.29 schema:affiliation grid-institutes:grid.15447.33
145 schema:familyName Violina
146 schema:givenName G. N.
147 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014463500425.29
148 rdf:type schema:Person
149 sg:person.016452614637.14 schema:affiliation grid-institutes:grid.496914.7
150 schema:familyName Ottaviani
151 schema:givenName L.
152 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016452614637.14
153 rdf:type schema:Person
154 sg:pub.10.1134/1.1610111 schema:sameAs https://app.dimensions.ai/details/publication/pub.1044016853
155 https://doi.org/10.1134/1.1610111
156 rdf:type schema:CreativeWork
157 sg:pub.10.1134/1.1808826 schema:sameAs https://app.dimensions.ai/details/publication/pub.1023933297
158 https://doi.org/10.1134/1.1808826
159 rdf:type schema:CreativeWork
160 sg:pub.10.1134/s1063782607040021 schema:sameAs https://app.dimensions.ai/details/publication/pub.1024225123
161 https://doi.org/10.1134/s1063782607040021
162 rdf:type schema:CreativeWork
163 sg:pub.10.1134/s1063782607070019 schema:sameAs https://app.dimensions.ai/details/publication/pub.1020572044
164 https://doi.org/10.1134/s1063782607070019
165 rdf:type schema:CreativeWork
166 sg:pub.10.1134/s1063782614020146 schema:sameAs https://app.dimensions.ai/details/publication/pub.1011514516
167 https://doi.org/10.1134/s1063782614020146
168 rdf:type schema:CreativeWork
169 sg:pub.10.1134/s1063784208010155 schema:sameAs https://app.dimensions.ai/details/publication/pub.1052726982
170 https://doi.org/10.1134/s1063784208010155
171 rdf:type schema:CreativeWork
172 sg:pub.10.1557/jmr.2011.216 schema:sameAs https://app.dimensions.ai/details/publication/pub.1004615319
173 https://doi.org/10.1557/jmr.2011.216
174 rdf:type schema:CreativeWork
175 sg:pub.10.1557/proc-650-r3.19 schema:sameAs https://app.dimensions.ai/details/publication/pub.1067950188
176 https://doi.org/10.1557/proc-650-r3.19
177 rdf:type schema:CreativeWork
178 grid-institutes:grid.15447.33 schema:alternateName St. Petersburg State Electrotechnical University LETI, 197376, St. Petersburg, Russia
179 schema:name St. Petersburg State Electrotechnical University LETI, 197376, St. Petersburg, Russia
180 rdf:type schema:Organization
181 grid-institutes:grid.33762.33 schema:alternateName Joint Institute for Nuclear Research, 141980, Dubna, Moscow oblast, Russia
182 schema:name Joint Institute for Nuclear Research, 141980, Dubna, Moscow oblast, Russia
183 rdf:type schema:Organization
184 grid-institutes:grid.423485.c schema:alternateName Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
185 schema:name Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
186 rdf:type schema:Organization
187 grid-institutes:grid.496914.7 schema:alternateName IM2NP, CNRS UMR 7334, Aix Marseille Université, OPTO-PV, Marseille, France
188 schema:name IM2NP, CNRS UMR 7334, Aix Marseille Université, OPTO-PV, Marseille, France
189 rdf:type schema:Organization
 




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