Temperature dependence of the carrier lifetime in CdxHg1 − xTe narrow-gap solid solutions with consideration for Auger processes View Full Text


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Article Info

DATE

2015-04-16

AUTHORS

N. L. Bazhenov, K. D. Mynbaev, G. G. Zegrya

ABSTRACT

The temperature dependence of the carrier lifetime in CdxHg1 − xTe narrow-gap solid solutions in the temperature range 5 K < T < 300 K is analyzed within the scope of a microscopic model. Main attention is given to an analysis of the Auger recombination mechanism governing the carrier lifetime at high temperatures. The Auger-recombination rates are calculated with consideration for specific features of the band structure of the narrow-gap semiconductor in microscopic theory. It is shown that strict account of the non-parabolicity of the electronic structure in terms of Kane’s model leads to a substantially different temperature dependence of the Auger-recombination rates, compared with the approach in which nonparabolicity is disregarded. More... »

PAGES

432-436

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782615040065

DOI

http://dx.doi.org/10.1134/s1063782615040065

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1038772818


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