Acceptor states in heteroepitaxial CdHgTe films grown by molecular-beam epitaxy View Full Text


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Article Info

DATE

2015-03

AUTHORS

K. D. Mynbaev, A. V. Shilyaev, N. L. Bazhenov, A. I. Izhnin, I. I. Izhnin, N. N. Mikhailov, V. S. Varavin, S. A. Dvoretsky

ABSTRACT

The photoluminescence method is used to study acceptor states in CdHgTe heteroepitaxial films (HEFs) grown by molecular-beam epitaxy. A comparison of the photoluminescence spectra of HEFs grown on GaAs substrates (CdHgTe/GaAs) with the spectra of CdHgTe/Si HEFs demonstrates that acceptor states with energy depths of about 18 and 27 meV are specific to CdHgTe/GaAs HEFs. The possible nature of these states and its relation to the HEF synthesis conditions and, in particular, to the vacancy doping occurring under conditions of a mercury deficiency during the course of epitaxy and postgrowth processing are discussed. More... »

PAGES

367-372

References to SciGraph publications

  • 2001-09. Molecular-beam epitaxy of mercury-cadmium-telluride solid solutions on alternative substrates in SEMICONDUCTORS
  • 2014-02. Photoluminescence of CdHgTe solid solutions subjected to low-energy ion treatment in SEMICONDUCTORS
  • 2008-09. LWIR HgCdTe Detectors Grown on Ge Substrates in JOURNAL OF ELECTRONIC MATERIALS
  • 2013-12. Photoluminescence of HgCdTe nanostructures grown by molecular beam epitaxy on GaAs in OPTO-ELECTRONICS REVIEW
  • 2004-10. Magnetic-field dependences of the conductivity and hall factor in MBE-grown CdXHg1−XTe layers in SEMICONDUCTORS
  • 2009-02. Effect of annealing on the optical and photoelectrical properties of CdxHg1 − xTe heteroepitaxial structures for the middle infrared range in TECHNICAL PHYSICS LETTERS
  • 2014-08. GaSb: A New Alternative Substrate for Epitaxial Growth of HgCdTe in JOURNAL OF ELECTRONIC MATERIALS
  • 2010-07. Photoluminescence Studies of HgCdTe Epilayers in JOURNAL OF ELECTRONIC MATERIALS
  • 2012-12. Defects in HgCdTe grown by molecular beam epitaxy on GaAs substrates in OPTO-ELECTRONICS REVIEW
  • 2014-08. Defects in heteroepitaxial CdHgTe/Si layers and their behavior under conditions of implanted p+-n photodiode structure formation in TECHNICAL PHYSICS LETTERS
  • 2012-10. Electrical and optical properties of CdHgTe films grown by molecular-beam epitaxy on silicon substrates in SEMICONDUCTORS
  • 2012-10. Growth and Analysis of HgCdTe on Alternate Substrates in JOURNAL OF ELECTRONIC MATERIALS
  • 2011-07. Photoluminescence of Hg1 − xCdxTe based heterostructures grown by molecular-beam epitaxy in SEMICONDUCTORS
  • 2010-07. MBE Growth and Transfer of HgCdTe Epitaxial Films from InSb Substrates in JOURNAL OF ELECTRONIC MATERIALS
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    http://scigraph.springernature.com/pub.10.1134/s1063782615030148

    DOI

    http://dx.doi.org/10.1134/s1063782615030148

    DIMENSIONS

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