Acceptor states in heteroepitaxial CdHgTe films grown by molecular-beam epitaxy View Full Text


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Article Info

DATE

2015-03-04

AUTHORS

K. D. Mynbaev, A. V. Shilyaev, N. L. Bazhenov, A. I. Izhnin, I. I. Izhnin, N. N. Mikhailov, V. S. Varavin, S. A. Dvoretsky

ABSTRACT

The photoluminescence method is used to study acceptor states in CdHgTe heteroepitaxial films (HEFs) grown by molecular-beam epitaxy. A comparison of the photoluminescence spectra of HEFs grown on GaAs substrates (CdHgTe/GaAs) with the spectra of CdHgTe/Si HEFs demonstrates that acceptor states with energy depths of about 18 and 27 meV are specific to CdHgTe/GaAs HEFs. The possible nature of these states and its relation to the HEF synthesis conditions and, in particular, to the vacancy doping occurring under conditions of a mercury deficiency during the course of epitaxy and postgrowth processing are discussed. More... »

PAGES

367-372

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782615030148

DOI

http://dx.doi.org/10.1134/s1063782615030148

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1041480786


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