Electrical properties of Pd-oxide-InP structures View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2015-03-04

AUTHORS

E. A. Grebenshchikova, V. V. Evstropov, N. D. Il’inskaya, Yu. S. Mel’nikov, O. Yu. Serebrennikova, V. G. Sidorov, V. V. Sherstnev, Yu. P. Yakovlev

ABSTRACT

Pd-anodic oxide-InP metal-oxide-semiconductor (MOS) structures are fabricated to develop a hydrogen sensor capable of effectively operating at room temperature. The conduction mechanisms of the structures at 100–300 K are studied. It is found that the oxide behaves as ohmic resistance and the rectifying properties of the structures are determined by the potential barrier at the oxide-InP interface with the thermal-tunneling charge transport mechanism. The structures greatly change their characteristics in the presence of hydrogen in the ambient medium. More... »

PAGES

364-366

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782615030094

DOI

http://dx.doi.org/10.1134/s1063782615030094

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1026651385


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0204", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Condensed Matter Physics", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0206", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Quantum Physics", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Grebenshchikova", 
        "givenName": "E. A.", 
        "id": "sg:person.016421767753.88", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016421767753.88"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Evstropov", 
        "givenName": "V. V.", 
        "id": "sg:person.013245131377.70", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013245131377.70"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Il\u2019inskaya", 
        "givenName": "N. D.", 
        "id": "sg:person.010015773715.60", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010015773715.60"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "St. Petersburg State Polytechnic University, 195251, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.32495.39", 
          "name": [
            "St. Petersburg State Polytechnic University, 195251, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Mel\u2019nikov", 
        "givenName": "Yu. S.", 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Serebrennikova", 
        "givenName": "O. Yu.", 
        "id": "sg:person.013243223127.13", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013243223127.13"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "St. Petersburg State Polytechnic University, 195251, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.32495.39", 
          "name": [
            "St. Petersburg State Polytechnic University, 195251, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Sidorov", 
        "givenName": "V. G.", 
        "id": "sg:person.013343705073.58", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013343705073.58"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Sherstnev", 
        "givenName": "V. V.", 
        "id": "sg:person.011741151327.16", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011741151327.16"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Yakovlev", 
        "givenName": "Yu. P.", 
        "id": "sg:person.012771052533.51", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012771052533.51"
        ], 
        "type": "Person"
      }
    ], 
    "datePublished": "2015-03-04", 
    "datePublishedReg": "2015-03-04", 
    "description": "Pd-anodic oxide-InP metal-oxide-semiconductor (MOS) structures are fabricated to develop a hydrogen sensor capable of effectively operating at room temperature. The conduction mechanisms of the structures at 100\u2013300 K are studied. It is found that the oxide behaves as ohmic resistance and the rectifying properties of the structures are determined by the potential barrier at the oxide-InP interface with the thermal-tunneling charge transport mechanism. The structures greatly change their characteristics in the presence of hydrogen in the ambient medium.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063782615030094", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "3", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "49"
      }
    ], 
    "keywords": [
      "charge transport mechanism", 
      "hydrogen sensor", 
      "semiconductor structures", 
      "ohmic resistance", 
      "electrical properties", 
      "presence of hydrogen", 
      "InP structures", 
      "conduction mechanism", 
      "room temperature", 
      "transport mechanism", 
      "ambient medium", 
      "properties", 
      "sensors", 
      "structure", 
      "interface", 
      "oxide", 
      "hydrogen", 
      "temperature", 
      "potential barrier", 
      "resistance", 
      "characteristics", 
      "mechanism", 
      "medium", 
      "barriers", 
      "presence"
    ], 
    "name": "Electrical properties of Pd-oxide-InP structures", 
    "pagination": "364-366", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1026651385"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782615030094"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782615030094", 
      "https://app.dimensions.ai/details/publication/pub.1026651385"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-05-20T07:30", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220519/entities/gbq_results/article/article_647.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063782615030094"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/s1063782615030094'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/s1063782615030094'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/s1063782615030094'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/s1063782615030094'


 

This table displays all metadata directly associated to this object as RDF triples.

138 TRIPLES      21 PREDICATES      51 URIs      42 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782615030094 schema:about anzsrc-for:02
2 anzsrc-for:0204
3 anzsrc-for:0206
4 schema:author N1dab2356f110425f9b83d12cf1de367e
5 schema:datePublished 2015-03-04
6 schema:datePublishedReg 2015-03-04
7 schema:description Pd-anodic oxide-InP metal-oxide-semiconductor (MOS) structures are fabricated to develop a hydrogen sensor capable of effectively operating at room temperature. The conduction mechanisms of the structures at 100–300 K are studied. It is found that the oxide behaves as ohmic resistance and the rectifying properties of the structures are determined by the potential barrier at the oxide-InP interface with the thermal-tunneling charge transport mechanism. The structures greatly change their characteristics in the presence of hydrogen in the ambient medium.
8 schema:genre article
9 schema:inLanguage en
10 schema:isAccessibleForFree false
11 schema:isPartOf N87a8f6ed58a94bd1b72fb4429df06a7d
12 Nd88a9500595d4d43bf931205099ca7f7
13 sg:journal.1136692
14 schema:keywords InP structures
15 ambient medium
16 barriers
17 characteristics
18 charge transport mechanism
19 conduction mechanism
20 electrical properties
21 hydrogen
22 hydrogen sensor
23 interface
24 mechanism
25 medium
26 ohmic resistance
27 oxide
28 potential barrier
29 presence
30 presence of hydrogen
31 properties
32 resistance
33 room temperature
34 semiconductor structures
35 sensors
36 structure
37 temperature
38 transport mechanism
39 schema:name Electrical properties of Pd-oxide-InP structures
40 schema:pagination 364-366
41 schema:productId N21ba5d8d10014ae486b850ae85ef8b7c
42 Nda389b83c12b477db07b44a83b99525e
43 schema:sameAs https://app.dimensions.ai/details/publication/pub.1026651385
44 https://doi.org/10.1134/s1063782615030094
45 schema:sdDatePublished 2022-05-20T07:30
46 schema:sdLicense https://scigraph.springernature.com/explorer/license/
47 schema:sdPublisher N705c3ec23b7248de950df3f8489bcd31
48 schema:url https://doi.org/10.1134/s1063782615030094
49 sgo:license sg:explorer/license/
50 sgo:sdDataset articles
51 rdf:type schema:ScholarlyArticle
52 N1dab2356f110425f9b83d12cf1de367e rdf:first sg:person.016421767753.88
53 rdf:rest Nb460bd0d9ba9455fa153005a2a7e265f
54 N21ba5d8d10014ae486b850ae85ef8b7c schema:name doi
55 schema:value 10.1134/s1063782615030094
56 rdf:type schema:PropertyValue
57 N24b6806c581f4000b2cf2817550a684e rdf:first sg:person.010015773715.60
58 rdf:rest N8029980970d147cabc3fafd410678e4c
59 N36ad21c3fdeb46098d318fb359116d7b rdf:first sg:person.013243223127.13
60 rdf:rest N3ce4c687ed5047dc94db0e21e9d3ae5a
61 N3afe15fedf704a4d863f917b40222e87 rdf:first sg:person.012771052533.51
62 rdf:rest rdf:nil
63 N3ce4c687ed5047dc94db0e21e9d3ae5a rdf:first sg:person.013343705073.58
64 rdf:rest Nff021a05336f4659bc1e193dd29be092
65 N705c3ec23b7248de950df3f8489bcd31 schema:name Springer Nature - SN SciGraph project
66 rdf:type schema:Organization
67 N8029980970d147cabc3fafd410678e4c rdf:first Nc8b75c127b0c4cbabcedc84f3e4d9d60
68 rdf:rest N36ad21c3fdeb46098d318fb359116d7b
69 N87a8f6ed58a94bd1b72fb4429df06a7d schema:volumeNumber 49
70 rdf:type schema:PublicationVolume
71 Nb460bd0d9ba9455fa153005a2a7e265f rdf:first sg:person.013245131377.70
72 rdf:rest N24b6806c581f4000b2cf2817550a684e
73 Nc8b75c127b0c4cbabcedc84f3e4d9d60 schema:affiliation grid-institutes:grid.32495.39
74 schema:familyName Mel’nikov
75 schema:givenName Yu. S.
76 rdf:type schema:Person
77 Nd88a9500595d4d43bf931205099ca7f7 schema:issueNumber 3
78 rdf:type schema:PublicationIssue
79 Nda389b83c12b477db07b44a83b99525e schema:name dimensions_id
80 schema:value pub.1026651385
81 rdf:type schema:PropertyValue
82 Nff021a05336f4659bc1e193dd29be092 rdf:first sg:person.011741151327.16
83 rdf:rest N3afe15fedf704a4d863f917b40222e87
84 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
85 schema:name Physical Sciences
86 rdf:type schema:DefinedTerm
87 anzsrc-for:0204 schema:inDefinedTermSet anzsrc-for:
88 schema:name Condensed Matter Physics
89 rdf:type schema:DefinedTerm
90 anzsrc-for:0206 schema:inDefinedTermSet anzsrc-for:
91 schema:name Quantum Physics
92 rdf:type schema:DefinedTerm
93 sg:journal.1136692 schema:issn 1063-7826
94 1090-6479
95 schema:name Semiconductors
96 schema:publisher Pleiades Publishing
97 rdf:type schema:Periodical
98 sg:person.010015773715.60 schema:affiliation grid-institutes:grid.423485.c
99 schema:familyName Il’inskaya
100 schema:givenName N. D.
101 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010015773715.60
102 rdf:type schema:Person
103 sg:person.011741151327.16 schema:affiliation grid-institutes:grid.423485.c
104 schema:familyName Sherstnev
105 schema:givenName V. V.
106 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011741151327.16
107 rdf:type schema:Person
108 sg:person.012771052533.51 schema:affiliation grid-institutes:grid.423485.c
109 schema:familyName Yakovlev
110 schema:givenName Yu. P.
111 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012771052533.51
112 rdf:type schema:Person
113 sg:person.013243223127.13 schema:affiliation grid-institutes:grid.423485.c
114 schema:familyName Serebrennikova
115 schema:givenName O. Yu.
116 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013243223127.13
117 rdf:type schema:Person
118 sg:person.013245131377.70 schema:affiliation grid-institutes:grid.423485.c
119 schema:familyName Evstropov
120 schema:givenName V. V.
121 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013245131377.70
122 rdf:type schema:Person
123 sg:person.013343705073.58 schema:affiliation grid-institutes:grid.32495.39
124 schema:familyName Sidorov
125 schema:givenName V. G.
126 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013343705073.58
127 rdf:type schema:Person
128 sg:person.016421767753.88 schema:affiliation grid-institutes:grid.423485.c
129 schema:familyName Grebenshchikova
130 schema:givenName E. A.
131 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016421767753.88
132 rdf:type schema:Person
133 grid-institutes:grid.32495.39 schema:alternateName St. Petersburg State Polytechnic University, 195251, St. Petersburg, Russia
134 schema:name St. Petersburg State Polytechnic University, 195251, St. Petersburg, Russia
135 rdf:type schema:Organization
136 grid-institutes:grid.423485.c schema:alternateName Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
137 schema:name Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
138 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...