Effect of the direct capture of holes with the emission of optical phonons on impurity-photoconductivity relaxation in p-Si:B View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2015-02-05

AUTHORS

D. V. Kozlov, S. V. Morozov, V. V. Rumyantsev, I. V. Tuzov, K. E. Kudryavtsev, V. I. Gavrilenko

ABSTRACT

A theoretical model developed for interpretation of the results of measurements of the impurity-photoconductivity relaxation in p-Si:B under pulsed optical excitation by a narrow-band tunable source of radiation in “heating” (10–500 V/cm) electric fields is presented. The model takes into account the capture of holes at the ground and lower excited states of boron with optical-phonon emission. It is shown that the dependence of the photoconductivity-relaxation time on the electric-field intensity can be unsteady taking into account these processes. More... »

PAGES

187-190

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782615020128

DOI

http://dx.doi.org/10.1134/s1063782615020128

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1007477953


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