Observation of dynamics of impurity photoconductivity in n-GaAs caused by electron cooling View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2015-01-08

AUTHORS

V. Ya. Aleshkin, S. V. Morozov, V. V. Rumyantsev, I. V. Tuzov

ABSTRACT

Experimental investigation of the time dependence of impurity photoconductivity in n-GaAs is carried out upon pulsed optical excitation. It is shown that a change in the photoconductivity is determined mainly by electron cooling in the first 20 ns after photoexcitation. A theoretical model for describing the dependences under observation is proposed. More... »

PAGES

113-117

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782615010030

DOI

http://dx.doi.org/10.1134/s1063782615010030

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1031187408


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