High-power LEDs based on InGaAsP/InP heterostructures View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2014-12-02

AUTHORS

V. Rakovics, A. N. Imenkov, V. V. Sherstnev, O. Yu. Serebrennikova, N. D. Il’inskaya, Yu. P. Yakovlev

ABSTRACT

High-power light-emitting diodes (LEDs) with mesa diameters of 100, 200, and 300 μm are developed on the basis of InGaAsP/InP heterostructures. The mesas are close in shape to a truncated cone with a generatrix inclination angle of ∼45° in the vicinity of the active region of the LED, with a ring etched around the mesa serving as a reflector. The emission spectra and directivity patterns of these LEDs are studied in a wide range of current densities and it is shown that radiative recombination is dominant to a current density of ∼5000 A/cm2, which makes these structures promising for the development of high-power LEDs. An emission power of ∼14 mW is obtained in the continuous-wave mode (I = 0.2 A, λ = 1.1 μm), and that of 77 mW, in the pulsed mode (I = 2 A, λ = 1.1 μm), which corresponds to external quantum efficiencies of 6.2 and 3.4%, respectively. More... »

PAGES

1653-1656

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782614120173

DOI

http://dx.doi.org/10.1134/s1063782614120173

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1022100893


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