Effect of hydrostatic pressure during the annealing of silicon-on-insulator films implanted with a high hydrogen-ion dose View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2014-10-09

AUTHORS

I. E. Tyschenko, V. A. Volodin, V. V. Kozlovski, V. P. Popov

ABSTRACT

The properties of silicon-on-insulator films implanted with high hydrogen-ion doses (∼50 at %) and annealed under a pressure of 10.5 kbar are studied using the Raman scattering (RS) method. A high degree of optical-phonon localization is detected in the films under study, which is retained to an annealing temperature of ∼1000°C and is explained by the formation of silicon nanocrystals. It is found that the activation energy of annealing of the structural relaxation of dangling bonds in films with a high hydrogen content is independent of the annealing pressure. The activation energy of growth of the crystalline phase, calculated from RS spectra is ∼1.5 eV and is independent of pressure. The effect of hydrostatic pressure consists only in a decrease in the frequency factor limiting Si-Si bond relaxation during ordering. More... »

PAGES

1303-1307

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782614100285

DOI

http://dx.doi.org/10.1134/s1063782614100285

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1044631049


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