Comparison of the radiation hardness of silicon and silicon carbide View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2014-10-09

AUTHORS

A. A. Lebedev, V. V. Kozlovski

ABSTRACT

The radiation hardness of silicon carbide and silicon are compared. It is shown that one of the main characteristics of the radiation hardness of a semiconductor, the carrier removal rate Vd, strongly depends on its measurement conditions in the case of wide-gap semiconductors. A conclusion is made that comparison of the values of Vd, obtained at room temperature for SiC and Si, is not fully adequate from the physical standpoint. More... »

PAGES

1293-1295

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782614100170

DOI

http://dx.doi.org/10.1134/s1063782614100170

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1044186905


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0204", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Condensed Matter Physics", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0206", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Quantum Physics", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lebedev", 
        "givenName": "A. A.", 
        "id": "sg:person.011264364575.18", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011264364575.18"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "St. Petersburg State Polytechnic University, 195251, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.32495.39", 
          "name": [
            "St. Petersburg State Polytechnic University, 195251, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kozlovski", 
        "givenName": "V. V.", 
        "id": "sg:person.011730241573.99", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011730241573.99"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1007/978-1-4684-0904-8_1", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1013314571", 
          "https://doi.org/10.1007/978-1-4684-0904-8_1"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/1.1521229", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1007258165", 
          "https://doi.org/10.1134/1.1521229"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2014-10-09", 
    "datePublishedReg": "2014-10-09", 
    "description": "The radiation hardness of silicon carbide and silicon are compared. It is shown that one of the main characteristics of the radiation hardness of a semiconductor, the carrier removal rate Vd, strongly depends on its measurement conditions in the case of wide-gap semiconductors. A conclusion is made that comparison of the values of Vd, obtained at room temperature for SiC and Si, is not fully adequate from the physical standpoint.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063782614100170", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "10", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "48"
      }
    ], 
    "keywords": [
      "silicon carbide", 
      "radiation hardness", 
      "wide-gap semiconductors", 
      "hardness", 
      "carbide", 
      "silicon", 
      "measurement conditions", 
      "room temperature", 
      "semiconductors", 
      "physical standpoint", 
      "SiC", 
      "values of Vd", 
      "Si", 
      "main characteristics", 
      "temperature", 
      "characteristics", 
      "comparison", 
      "conditions", 
      "VD", 
      "values", 
      "standpoint", 
      "cases", 
      "conclusion", 
      "carrier removal rate Vd", 
      "removal rate Vd", 
      "rate Vd"
    ], 
    "name": "Comparison of the radiation hardness of silicon and silicon carbide", 
    "pagination": "1293-1295", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1044186905"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782614100170"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782614100170", 
      "https://app.dimensions.ai/details/publication/pub.1044186905"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2021-11-01T18:23", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20211101/entities/gbq_results/article/article_636.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063782614100170"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/s1063782614100170'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/s1063782614100170'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/s1063782614100170'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/s1063782614100170'


 

This table displays all metadata directly associated to this object as RDF triples.

106 TRIPLES      22 PREDICATES      54 URIs      43 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782614100170 schema:about anzsrc-for:02
2 anzsrc-for:0204
3 anzsrc-for:0206
4 schema:author Nb27eee8acdf742d186da6ead2838f5a1
5 schema:citation sg:pub.10.1007/978-1-4684-0904-8_1
6 sg:pub.10.1134/1.1521229
7 schema:datePublished 2014-10-09
8 schema:datePublishedReg 2014-10-09
9 schema:description The radiation hardness of silicon carbide and silicon are compared. It is shown that one of the main characteristics of the radiation hardness of a semiconductor, the carrier removal rate Vd, strongly depends on its measurement conditions in the case of wide-gap semiconductors. A conclusion is made that comparison of the values of Vd, obtained at room temperature for SiC and Si, is not fully adequate from the physical standpoint.
10 schema:genre article
11 schema:inLanguage en
12 schema:isAccessibleForFree false
13 schema:isPartOf N4b9bf2c3f6634e6a996e9e900c95410e
14 Ne1368a43f17945e3a65f39fab38358c8
15 sg:journal.1136692
16 schema:keywords Si
17 SiC
18 VD
19 carbide
20 carrier removal rate Vd
21 cases
22 characteristics
23 comparison
24 conclusion
25 conditions
26 hardness
27 main characteristics
28 measurement conditions
29 physical standpoint
30 radiation hardness
31 rate Vd
32 removal rate Vd
33 room temperature
34 semiconductors
35 silicon
36 silicon carbide
37 standpoint
38 temperature
39 values
40 values of Vd
41 wide-gap semiconductors
42 schema:name Comparison of the radiation hardness of silicon and silicon carbide
43 schema:pagination 1293-1295
44 schema:productId Nd6aa19e24222495f8a3c9677b44217ab
45 Neae02342d4ae4a168ecb05fdeab99329
46 schema:sameAs https://app.dimensions.ai/details/publication/pub.1044186905
47 https://doi.org/10.1134/s1063782614100170
48 schema:sdDatePublished 2021-11-01T18:23
49 schema:sdLicense https://scigraph.springernature.com/explorer/license/
50 schema:sdPublisher N33ff27507f9b41b0b1c6ca9e0cd288c3
51 schema:url https://doi.org/10.1134/s1063782614100170
52 sgo:license sg:explorer/license/
53 sgo:sdDataset articles
54 rdf:type schema:ScholarlyArticle
55 N33ff27507f9b41b0b1c6ca9e0cd288c3 schema:name Springer Nature - SN SciGraph project
56 rdf:type schema:Organization
57 N4b9bf2c3f6634e6a996e9e900c95410e schema:volumeNumber 48
58 rdf:type schema:PublicationVolume
59 N760d210729494e0791e67d5296bf4e2d rdf:first sg:person.011730241573.99
60 rdf:rest rdf:nil
61 Nb27eee8acdf742d186da6ead2838f5a1 rdf:first sg:person.011264364575.18
62 rdf:rest N760d210729494e0791e67d5296bf4e2d
63 Nd6aa19e24222495f8a3c9677b44217ab schema:name doi
64 schema:value 10.1134/s1063782614100170
65 rdf:type schema:PropertyValue
66 Ne1368a43f17945e3a65f39fab38358c8 schema:issueNumber 10
67 rdf:type schema:PublicationIssue
68 Neae02342d4ae4a168ecb05fdeab99329 schema:name dimensions_id
69 schema:value pub.1044186905
70 rdf:type schema:PropertyValue
71 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
72 schema:name Physical Sciences
73 rdf:type schema:DefinedTerm
74 anzsrc-for:0204 schema:inDefinedTermSet anzsrc-for:
75 schema:name Condensed Matter Physics
76 rdf:type schema:DefinedTerm
77 anzsrc-for:0206 schema:inDefinedTermSet anzsrc-for:
78 schema:name Quantum Physics
79 rdf:type schema:DefinedTerm
80 sg:journal.1136692 schema:issn 1063-7826
81 1090-6479
82 schema:name Semiconductors
83 schema:publisher Pleiades Publishing
84 rdf:type schema:Periodical
85 sg:person.011264364575.18 schema:affiliation grid-institutes:grid.423485.c
86 schema:familyName Lebedev
87 schema:givenName A. A.
88 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011264364575.18
89 rdf:type schema:Person
90 sg:person.011730241573.99 schema:affiliation grid-institutes:grid.32495.39
91 schema:familyName Kozlovski
92 schema:givenName V. V.
93 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011730241573.99
94 rdf:type schema:Person
95 sg:pub.10.1007/978-1-4684-0904-8_1 schema:sameAs https://app.dimensions.ai/details/publication/pub.1013314571
96 https://doi.org/10.1007/978-1-4684-0904-8_1
97 rdf:type schema:CreativeWork
98 sg:pub.10.1134/1.1521229 schema:sameAs https://app.dimensions.ai/details/publication/pub.1007258165
99 https://doi.org/10.1134/1.1521229
100 rdf:type schema:CreativeWork
101 grid-institutes:grid.32495.39 schema:alternateName St. Petersburg State Polytechnic University, 195251, St. Petersburg, Russia
102 schema:name St. Petersburg State Polytechnic University, 195251, St. Petersburg, Russia
103 rdf:type schema:Organization
104 grid-institutes:grid.423485.c schema:alternateName Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
105 schema:name Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
106 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...