P-InAsSbP/n0-InAs/n+-InAs photodiodes for operation at moderate cooling (150–220 K) View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2014-10-09

AUTHORS

P. N. Brunkov, N. D. Il’inskaya, S. A. Karandashev, N. M. Latnikova, A. A. Lavrov, B. A. Matveev, A. S. Petrov, M. A. Remennyi, E. N. Sevostyanov, N. M. Stus

ABSTRACT

InAs single hetero structure photodiodes were considered as alternatives to cooled CdHgTe-based detectors sensitive to radiation around 3 μm spectral region in a wide temperature range 77–300 K. Estimations of detectivity as well as p-n junction position in InAs heterostructures have been obtained via photoelectrical and AFM measurements.

PAGES

1359-1362

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782614100066

DOI

http://dx.doi.org/10.1134/s1063782614100066

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1011750299


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