Influence of GaAs spacer-layer thickness on quantum coupling and optical polarization in a ten-layer system of vertically correlated InAs/GaAs quantum ... View Full Text


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Article Info

DATE

2014-08-06

AUTHORS

M. M. Sobolev, I. M. Gadzhiyev, M. S. Buyalo, V. N. Nevedomskiy, Yu. M. Zadiranov, R. V. Zolotareva, A. P. Vasil’ev, V. M. Ustinov

ABSTRACT

The polarization anisotropy of electroluminescence and absorption in a ten-layer system of vertically correlated InAs quantum dots separated by 8.6-nm-thick GaAs spacer layers is investigated experimentally. The quantum-dot system is built into a two-section laser structure with sections of equal length. It is found that the polarization anisotropy in this system is smaller than the anisotropy in similar systems with a single layer of quantum dots or quantum-dot molecules, but larger than that in a quantum-dot superlattice. The spectra of differential absorption in the structure under study for different strengths of the applied electric field are also investigated. The rate of variation in the Stark shift as a function of the electric field is determined, the results giving evidence of controlled quantum coupling between adjacent quantum dots in tenlayer vertically correlated InAs/GaAs quantum-dot systems with 8.6- and 30-nm-thick GaAs spacer layers. The measured polarization dependences are explained by the participation of heavy-hole ground states in optical transitions. This effect is defined by the two dimensional nature of the system under study. More... »

PAGES

1031-1035

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782614080235

DOI

http://dx.doi.org/10.1134/s1063782614080235

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1001990157


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0205", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Optical Physics", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Sobolev", 
        "givenName": "M. M.", 
        "id": "sg:person.01031612724.92", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01031612724.92"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Gadzhiyev", 
        "givenName": "I. M.", 
        "id": "sg:person.012162436004.95", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012162436004.95"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Buyalo", 
        "givenName": "M. S.", 
        "id": "sg:person.01077726124.24", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01077726124.24"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Nevedomskiy", 
        "givenName": "V. N.", 
        "id": "sg:person.012000201301.19", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012000201301.19"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Zadiranov", 
        "givenName": "Yu. M.", 
        "id": "sg:person.014121041567.87", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014121041567.87"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Zolotareva", 
        "givenName": "R. V.", 
        "id": "sg:person.015072116725.07", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015072116725.07"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Vasil\u2019ev", 
        "givenName": "A. P.", 
        "id": "sg:person.014334030356.12", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014334030356.12"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Ustinov", 
        "givenName": "V. M.", 
        "id": "sg:person.010616411412.30", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010616411412.30"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1186/1556-276x-7-545", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1015998181", 
          "https://doi.org/10.1186/1556-276x-7-545"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782608030111", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1017290538", 
          "https://doi.org/10.1134/s1063782608030111"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782612010186", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1050235272", 
          "https://doi.org/10.1134/s1063782612010186"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782609040150", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1047684669", 
          "https://doi.org/10.1134/s1063782609040150"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782606030146", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1010455120", 
          "https://doi.org/10.1134/s1063782606030146"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1007/s11671-006-9004-x", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1038783983", 
          "https://doi.org/10.1007/s11671-006-9004-x"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782610060126", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1026732445", 
          "https://doi.org/10.1134/s1063782610060126"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/1.1852659", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1015543770", 
          "https://doi.org/10.1134/1.1852659"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782611080203", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1040974896", 
          "https://doi.org/10.1134/s1063782611080203"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2014-08-06", 
    "datePublishedReg": "2014-08-06", 
    "description": "The polarization anisotropy of electroluminescence and absorption in a ten-layer system of vertically correlated InAs quantum dots separated by 8.6-nm-thick GaAs spacer layers is investigated experimentally. The quantum-dot system is built into a two-section laser structure with sections of equal length. It is found that the polarization anisotropy in this system is smaller than the anisotropy in similar systems with a single layer of quantum dots or quantum-dot molecules, but larger than that in a quantum-dot superlattice. The spectra of differential absorption in the structure under study for different strengths of the applied electric field are also investigated. The rate of variation in the Stark shift as a function of the electric field is determined, the results giving evidence of controlled quantum coupling between adjacent quantum dots in tenlayer vertically correlated InAs/GaAs quantum-dot systems with 8.6- and 30-nm-thick GaAs spacer layers. The measured polarization dependences are explained by the participation of heavy-hole ground states in optical transitions. This effect is defined by the two dimensional nature of the system under study.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063782614080235", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "8", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "48"
      }
    ], 
    "keywords": [
      "quantum dot system", 
      "quantum dots", 
      "quantum coupling", 
      "GaAs spacer layers", 
      "polarization anisotropy", 
      "heavy-hole ground states", 
      "electric field", 
      "spacer layer", 
      "InAs/GaAs quantum dots", 
      "adjacent quantum dots", 
      "quantum dot molecules", 
      "GaAs quantum dots", 
      "GaAs spacer layer thickness", 
      "InAs quantum dots", 
      "thick GaAs spacer layer", 
      "quantum dot superlattices", 
      "optical polarization", 
      "laser structures", 
      "measured polarization dependence", 
      "optical transitions", 
      "Stark shift", 
      "spacer layer thickness", 
      "polarization dependence", 
      "ground state", 
      "InAs/GaAs quantum dot system", 
      "differential absorption", 
      "dots", 
      "anisotropy", 
      "single layer", 
      "absorption", 
      "coupling", 
      "dimensional nature", 
      "electroluminescence", 
      "superlattices", 
      "field", 
      "layer", 
      "similar systems", 
      "rate of variation", 
      "polarization", 
      "spectra", 
      "different strengths", 
      "transition", 
      "dependence", 
      "structure", 
      "thickness", 
      "shift", 
      "state", 
      "system", 
      "sections", 
      "molecules", 
      "nature", 
      "length", 
      "strength", 
      "function", 
      "variation", 
      "effect", 
      "equal length", 
      "results", 
      "influence", 
      "rate", 
      "study", 
      "evidence", 
      "participation"
    ], 
    "name": "Influence of GaAs spacer-layer thickness on quantum coupling and optical polarization in a ten-layer system of vertically correlated InAs/GaAs quantum dots", 
    "pagination": "1031-1035", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1001990157"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782614080235"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782614080235", 
      "https://app.dimensions.ai/details/publication/pub.1001990157"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-11-24T20:58", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20221124/entities/gbq_results/article/article_639.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063782614080235"
  }
]
 

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This table displays all metadata directly associated to this object as RDF triples.

205 TRIPLES      21 PREDICATES      96 URIs      79 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782614080235 schema:about anzsrc-for:02
2 anzsrc-for:0205
3 schema:author N7ac9c09dc80b4c48bcba8ffbf32e01a7
4 schema:citation sg:pub.10.1007/s11671-006-9004-x
5 sg:pub.10.1134/1.1852659
6 sg:pub.10.1134/s1063782606030146
7 sg:pub.10.1134/s1063782608030111
8 sg:pub.10.1134/s1063782609040150
9 sg:pub.10.1134/s1063782610060126
10 sg:pub.10.1134/s1063782611080203
11 sg:pub.10.1134/s1063782612010186
12 sg:pub.10.1186/1556-276x-7-545
13 schema:datePublished 2014-08-06
14 schema:datePublishedReg 2014-08-06
15 schema:description The polarization anisotropy of electroluminescence and absorption in a ten-layer system of vertically correlated InAs quantum dots separated by 8.6-nm-thick GaAs spacer layers is investigated experimentally. The quantum-dot system is built into a two-section laser structure with sections of equal length. It is found that the polarization anisotropy in this system is smaller than the anisotropy in similar systems with a single layer of quantum dots or quantum-dot molecules, but larger than that in a quantum-dot superlattice. The spectra of differential absorption in the structure under study for different strengths of the applied electric field are also investigated. The rate of variation in the Stark shift as a function of the electric field is determined, the results giving evidence of controlled quantum coupling between adjacent quantum dots in tenlayer vertically correlated InAs/GaAs quantum-dot systems with 8.6- and 30-nm-thick GaAs spacer layers. The measured polarization dependences are explained by the participation of heavy-hole ground states in optical transitions. This effect is defined by the two dimensional nature of the system under study.
16 schema:genre article
17 schema:isAccessibleForFree false
18 schema:isPartOf N02f3dc7e184444e0b98ff8862223f8fb
19 N611296c8d47448e7a73e2a97b85a562e
20 sg:journal.1136692
21 schema:keywords GaAs quantum dots
22 GaAs spacer layer thickness
23 GaAs spacer layers
24 InAs quantum dots
25 InAs/GaAs quantum dot system
26 InAs/GaAs quantum dots
27 Stark shift
28 absorption
29 adjacent quantum dots
30 anisotropy
31 coupling
32 dependence
33 different strengths
34 differential absorption
35 dimensional nature
36 dots
37 effect
38 electric field
39 electroluminescence
40 equal length
41 evidence
42 field
43 function
44 ground state
45 heavy-hole ground states
46 influence
47 laser structures
48 layer
49 length
50 measured polarization dependence
51 molecules
52 nature
53 optical polarization
54 optical transitions
55 participation
56 polarization
57 polarization anisotropy
58 polarization dependence
59 quantum coupling
60 quantum dot molecules
61 quantum dot superlattices
62 quantum dot system
63 quantum dots
64 rate
65 rate of variation
66 results
67 sections
68 shift
69 similar systems
70 single layer
71 spacer layer
72 spacer layer thickness
73 spectra
74 state
75 strength
76 structure
77 study
78 superlattices
79 system
80 thick GaAs spacer layer
81 thickness
82 transition
83 variation
84 schema:name Influence of GaAs spacer-layer thickness on quantum coupling and optical polarization in a ten-layer system of vertically correlated InAs/GaAs quantum dots
85 schema:pagination 1031-1035
86 schema:productId N26ef1e4fc82c4e5698a04d0d4caa67c6
87 Nca2b998557074242a12aadcb6d508d2f
88 schema:sameAs https://app.dimensions.ai/details/publication/pub.1001990157
89 https://doi.org/10.1134/s1063782614080235
90 schema:sdDatePublished 2022-11-24T20:58
91 schema:sdLicense https://scigraph.springernature.com/explorer/license/
92 schema:sdPublisher N2f8b98fb17f84a6f94735d4404c2005c
93 schema:url https://doi.org/10.1134/s1063782614080235
94 sgo:license sg:explorer/license/
95 sgo:sdDataset articles
96 rdf:type schema:ScholarlyArticle
97 N0032113e1a684849b39407fc40afd811 rdf:first sg:person.015072116725.07
98 rdf:rest N459470e26acd45d3991c4b8d0dc096b3
99 N02f3dc7e184444e0b98ff8862223f8fb schema:volumeNumber 48
100 rdf:type schema:PublicationVolume
101 N26ef1e4fc82c4e5698a04d0d4caa67c6 schema:name doi
102 schema:value 10.1134/s1063782614080235
103 rdf:type schema:PropertyValue
104 N2f8b98fb17f84a6f94735d4404c2005c schema:name Springer Nature - SN SciGraph project
105 rdf:type schema:Organization
106 N459470e26acd45d3991c4b8d0dc096b3 rdf:first sg:person.014334030356.12
107 rdf:rest N4edcb59c88fd4189a40a2b69b22e754a
108 N4edcb59c88fd4189a40a2b69b22e754a rdf:first sg:person.010616411412.30
109 rdf:rest rdf:nil
110 N60b02879be2348d68057bb3fca5b9c34 rdf:first sg:person.014121041567.87
111 rdf:rest N0032113e1a684849b39407fc40afd811
112 N611296c8d47448e7a73e2a97b85a562e schema:issueNumber 8
113 rdf:type schema:PublicationIssue
114 N7ac9c09dc80b4c48bcba8ffbf32e01a7 rdf:first sg:person.01031612724.92
115 rdf:rest Nf7ca1245797f47c8bdf3fc6c9266ad2d
116 Nca2b998557074242a12aadcb6d508d2f schema:name dimensions_id
117 schema:value pub.1001990157
118 rdf:type schema:PropertyValue
119 Nd89fe9c072fa45619ac988db2f139c1d rdf:first sg:person.01077726124.24
120 rdf:rest Ne9481b1e87504ff6816185325d2339c5
121 Ne9481b1e87504ff6816185325d2339c5 rdf:first sg:person.012000201301.19
122 rdf:rest N60b02879be2348d68057bb3fca5b9c34
123 Nf7ca1245797f47c8bdf3fc6c9266ad2d rdf:first sg:person.012162436004.95
124 rdf:rest Nd89fe9c072fa45619ac988db2f139c1d
125 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
126 schema:name Physical Sciences
127 rdf:type schema:DefinedTerm
128 anzsrc-for:0205 schema:inDefinedTermSet anzsrc-for:
129 schema:name Optical Physics
130 rdf:type schema:DefinedTerm
131 sg:journal.1136692 schema:issn 1063-7826
132 1090-6479
133 schema:name Semiconductors
134 schema:publisher Pleiades Publishing
135 rdf:type schema:Periodical
136 sg:person.01031612724.92 schema:affiliation grid-institutes:grid.423485.c
137 schema:familyName Sobolev
138 schema:givenName M. M.
139 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01031612724.92
140 rdf:type schema:Person
141 sg:person.010616411412.30 schema:affiliation grid-institutes:grid.423485.c
142 schema:familyName Ustinov
143 schema:givenName V. M.
144 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010616411412.30
145 rdf:type schema:Person
146 sg:person.01077726124.24 schema:affiliation grid-institutes:grid.423485.c
147 schema:familyName Buyalo
148 schema:givenName M. S.
149 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01077726124.24
150 rdf:type schema:Person
151 sg:person.012000201301.19 schema:affiliation grid-institutes:grid.423485.c
152 schema:familyName Nevedomskiy
153 schema:givenName V. N.
154 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012000201301.19
155 rdf:type schema:Person
156 sg:person.012162436004.95 schema:affiliation grid-institutes:grid.423485.c
157 schema:familyName Gadzhiyev
158 schema:givenName I. M.
159 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012162436004.95
160 rdf:type schema:Person
161 sg:person.014121041567.87 schema:affiliation grid-institutes:grid.423485.c
162 schema:familyName Zadiranov
163 schema:givenName Yu. M.
164 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014121041567.87
165 rdf:type schema:Person
166 sg:person.014334030356.12 schema:affiliation grid-institutes:grid.423485.c
167 schema:familyName Vasil’ev
168 schema:givenName A. P.
169 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014334030356.12
170 rdf:type schema:Person
171 sg:person.015072116725.07 schema:affiliation grid-institutes:grid.423485.c
172 schema:familyName Zolotareva
173 schema:givenName R. V.
174 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015072116725.07
175 rdf:type schema:Person
176 sg:pub.10.1007/s11671-006-9004-x schema:sameAs https://app.dimensions.ai/details/publication/pub.1038783983
177 https://doi.org/10.1007/s11671-006-9004-x
178 rdf:type schema:CreativeWork
179 sg:pub.10.1134/1.1852659 schema:sameAs https://app.dimensions.ai/details/publication/pub.1015543770
180 https://doi.org/10.1134/1.1852659
181 rdf:type schema:CreativeWork
182 sg:pub.10.1134/s1063782606030146 schema:sameAs https://app.dimensions.ai/details/publication/pub.1010455120
183 https://doi.org/10.1134/s1063782606030146
184 rdf:type schema:CreativeWork
185 sg:pub.10.1134/s1063782608030111 schema:sameAs https://app.dimensions.ai/details/publication/pub.1017290538
186 https://doi.org/10.1134/s1063782608030111
187 rdf:type schema:CreativeWork
188 sg:pub.10.1134/s1063782609040150 schema:sameAs https://app.dimensions.ai/details/publication/pub.1047684669
189 https://doi.org/10.1134/s1063782609040150
190 rdf:type schema:CreativeWork
191 sg:pub.10.1134/s1063782610060126 schema:sameAs https://app.dimensions.ai/details/publication/pub.1026732445
192 https://doi.org/10.1134/s1063782610060126
193 rdf:type schema:CreativeWork
194 sg:pub.10.1134/s1063782611080203 schema:sameAs https://app.dimensions.ai/details/publication/pub.1040974896
195 https://doi.org/10.1134/s1063782611080203
196 rdf:type schema:CreativeWork
197 sg:pub.10.1134/s1063782612010186 schema:sameAs https://app.dimensions.ai/details/publication/pub.1050235272
198 https://doi.org/10.1134/s1063782612010186
199 rdf:type schema:CreativeWork
200 sg:pub.10.1186/1556-276x-7-545 schema:sameAs https://app.dimensions.ai/details/publication/pub.1015998181
201 https://doi.org/10.1186/1556-276x-7-545
202 rdf:type schema:CreativeWork
203 grid-institutes:grid.423485.c schema:alternateName Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
204 schema:name Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
205 rdf:type schema:Organization
 




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