Conductivity compensation in n-4H-SiC (CVD) under irradiation with 0.9-MeV electrons View Full Text


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Article Info

DATE

2014-08-06

AUTHORS

V. V. Kozlovski, A. A. Lebedev, V. N. Lomasov, E. V. Bogdanova, N. V. Seredova

ABSTRACT

The effect of electron irradiation on n-4H-SiC is studied by the methods of capacitance-voltage characteristics and photoluminescence. The carrier-removal rate is found to be Vd ≈ 0.25 cm−1. Total conductivity compensation in samples with an initial carrier concentration of (1–2) × 1015 cm−2 is observed at irradiation doses of ∼5 × 1015 cm−2. Simultaneously with an increase in the compensation, a rise in the intensity of defect-related luminescence characteristic of 4H-SiC is observed. The sample parameters before irradiation and after irradiation and annealing are compared. The physical mechanisms of compensation in the samples under study are analyzed. More... »

PAGES

1006-1009

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782614080156

DOI

http://dx.doi.org/10.1134/s1063782614080156

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1040897109


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