On InAsSbP epitaxial layers with ultimate phosphorus content, lattice-matched with an InAs substrate View Full Text


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Article Info

DATE

2014-06-12

AUTHORS

V. V. Romanov, M. V. Baidakova, K. D. Moiseev

ABSTRACT

Experimental results obtained upon the growth of InAs1 − x − ySbyPx multicomponent solid solutions with 0.43 < x < 0.72 by metal-organic vapor-phase epitaxy at low deposition temperatures (T < 520°C) with a metal-organic source of arsenic are presented. A model is suggested for describing the growth of an InAsSbP epitaxial layer that is isomorphic with the InAs substrate at a given ratio between the phosphorus and antimony concentrations in the solid phase. More... »

PAGES

733-738

References to SciGraph publications

  • 2011-06. LEDs based on InAsSbP/InAsSb heterostructures (λ = 4.7 μm) for carbon monoxide detection in TECHNICAL PHYSICS LETTERS
  • 2001-07. Ultimate InAsSbP solid solutions for 2.6–2.8-μm LEDs in TECHNICAL PHYSICS LETTERS
  • 1921-01. Die Konstitution der Mischkristalle und die Raumfüllung der Atome in ZEITSCHRIFT FÜR PHYSIK A HADRONS AND NUCLEI
  • 1977-03. Liquid phase epitaxial growth of InAsxSbyPl-x-y layers on InAs in JOURNAL OF ELECTRONIC MATERIALS
  • Identifiers

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    http://scigraph.springernature.com/pub.10.1134/s1063782614060220

    DOI

    http://dx.doi.org/10.1134/s1063782614060220

    DIMENSIONS

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