On the features of hydrogen detection by a semiconductor structure grown on a 6H-SiC substrate by the combined method of ... View Full Text


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Article Info

DATE

2014-05

AUTHORS

V. V. Zuev, S. N. Grigoriev, R. I. Romanov, V. Yu. Fominski, V. V. Grigoriev

ABSTRACT

The results of a comparative study of the electrical properties of gas-sensitive semiconductor structures grown by the pulsed laser deposition of platinum, platinum ion implantation, and a combined method of platinum implantation and deposition onto an n-6H-SiC substrate are presented. Double-layer structures show a stronger response to hydrogen gas with a more pronounced diode behavior of the currentvoltage characteristics at high temperatures of ∼500°C than single-layer ion-implanted structures. Furthermore, double-layer structures exhibit higher reproducibility of the current-voltage characteristic parameters during thermal cycling in a hydrogen-containing medium than ordinary thin-film structures on SiC substrates. The chemical state of ion-implanted platinum and the structure of thin-film layers after long-term testing are studied under harsh conditions. Possible mechanisms of the effect of platinum on the current flow in the ion-implanted layer and its dependence on the composition of the surrounding gaseous medium are considered. More... »

PAGES

602-611

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s106378261405025x

DOI

http://dx.doi.org/10.1134/s106378261405025x

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1047994227


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0912", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Materials Engineering", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/09", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Engineering", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Moscow Engineering Physics Institute", 
          "id": "https://www.grid.ac/institutes/grid.183446.c", 
          "name": [
            "National Research Nuclear University \u201cMEPhI\u201d, Kashirskoe sh. 31, 115409, Moscow, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Zuev", 
        "givenName": "V. V.", 
        "id": "sg:person.016437655111.05", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016437655111.05"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Moscow State Technological University", 
          "id": "https://www.grid.ac/institutes/grid.446318.c", 
          "name": [
            "Moscow State University of Technology \u201cSTANKIN\u201d, Vadkovskii per. 1, 127994, Moscow, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Grigoriev", 
        "givenName": "S. N.", 
        "id": "sg:person.015512456231.70", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015512456231.70"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Moscow Engineering Physics Institute", 
          "id": "https://www.grid.ac/institutes/grid.183446.c", 
          "name": [
            "National Research Nuclear University \u201cMEPhI\u201d, Kashirskoe sh. 31, 115409, Moscow, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Romanov", 
        "givenName": "R. I.", 
        "id": "sg:person.014716620177.77", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014716620177.77"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Moscow Engineering Physics Institute", 
          "id": "https://www.grid.ac/institutes/grid.183446.c", 
          "name": [
            "National Research Nuclear University \u201cMEPhI\u201d, Kashirskoe sh. 31, 115409, Moscow, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Fominski", 
        "givenName": "V. Yu.", 
        "id": "sg:person.015721576231.51", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015721576231.51"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Moscow Engineering Physics Institute", 
          "id": "https://www.grid.ac/institutes/grid.183446.c", 
          "name": [
            "National Research Nuclear University \u201cMEPhI\u201d, Kashirskoe sh. 31, 115409, Moscow, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Grigoriev", 
        "givenName": "V. V.", 
        "id": "sg:person.016233223543.77", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016233223543.77"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "https://doi.org/10.1016/j.snb.2010.09.059", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1009516035"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s106378341303013x", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1012157044", 
          "https://doi.org/10.1134/s106378341303013x"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782611050095", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1015909167", 
          "https://doi.org/10.1134/s1063782611050095"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063784207110151", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1023989538", 
          "https://doi.org/10.1134/s1063784207110151"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/s0042-207x(01)00419-5", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1028235790"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.snb.2008.03.011", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1039097176"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782610040226", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1045176569", 
          "https://doi.org/10.1134/s1063782610040226"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782610040226", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1045176569", 
          "https://doi.org/10.1134/s1063782610040226"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.snb.2012.12.059", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1047599983"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/j.sse.2005.01.015", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1049661946"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1016/s0925-4005(00)00290-2", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1049665843"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "https://doi.org/10.1063/1.1319165", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1057694033"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2014-05", 
    "datePublishedReg": "2014-05-01", 
    "description": "The results of a comparative study of the electrical properties of gas-sensitive semiconductor structures grown by the pulsed laser deposition of platinum, platinum ion implantation, and a combined method of platinum implantation and deposition onto an n-6H-SiC substrate are presented. Double-layer structures show a stronger response to hydrogen gas with a more pronounced diode behavior of the currentvoltage characteristics at high temperatures of \u223c500\u00b0C than single-layer ion-implanted structures. Furthermore, double-layer structures exhibit higher reproducibility of the current-voltage characteristic parameters during thermal cycling in a hydrogen-containing medium than ordinary thin-film structures on SiC substrates. The chemical state of ion-implanted platinum and the structure of thin-film layers after long-term testing are studied under harsh conditions. Possible mechanisms of the effect of platinum on the current flow in the ion-implanted layer and its dependence on the composition of the surrounding gaseous medium are considered.", 
    "genre": "research_article", 
    "id": "sg:pub.10.1134/s106378261405025x", 
    "inLanguage": [
      "en"
    ], 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "5", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "48"
      }
    ], 
    "name": "On the features of hydrogen detection by a semiconductor structure grown on a 6H-SiC substrate by the combined method of platinum ion implantation and deposition", 
    "pagination": "602-611", 
    "productId": [
      {
        "name": "readcube_id", 
        "type": "PropertyValue", 
        "value": [
          "e4a2763e4055e4b37e330f11f878b5f0e1473491f1efd47c76804ae651bc8d1a"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s106378261405025x"
        ]
      }, 
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1047994227"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s106378261405025x", 
      "https://app.dimensions.ai/details/publication/pub.1047994227"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2019-04-10T14:59", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-uberresearch-data-dimensions-target-20181106-alternative/cleanup/v134/2549eaecd7973599484d7c17b260dba0a4ecb94b/merge/v9/a6c9fde33151104705d4d7ff012ea9563521a3ce/jats-lookup/v90/0000000001_0000000264/records_8663_00000508.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "http://link.springer.com/10.1134%2FS106378261405025X"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

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This table displays all metadata directly associated to this object as RDF triples.

129 TRIPLES      21 PREDICATES      38 URIs      19 LITERALS      7 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s106378261405025x schema:about anzsrc-for:09
2 anzsrc-for:0912
3 schema:author N6771d73b78bd49d0bb086fd40de6f999
4 schema:citation sg:pub.10.1134/s1063782610040226
5 sg:pub.10.1134/s1063782611050095
6 sg:pub.10.1134/s106378341303013x
7 sg:pub.10.1134/s1063784207110151
8 https://doi.org/10.1016/j.snb.2008.03.011
9 https://doi.org/10.1016/j.snb.2010.09.059
10 https://doi.org/10.1016/j.snb.2012.12.059
11 https://doi.org/10.1016/j.sse.2005.01.015
12 https://doi.org/10.1016/s0042-207x(01)00419-5
13 https://doi.org/10.1016/s0925-4005(00)00290-2
14 https://doi.org/10.1063/1.1319165
15 schema:datePublished 2014-05
16 schema:datePublishedReg 2014-05-01
17 schema:description The results of a comparative study of the electrical properties of gas-sensitive semiconductor structures grown by the pulsed laser deposition of platinum, platinum ion implantation, and a combined method of platinum implantation and deposition onto an n-6H-SiC substrate are presented. Double-layer structures show a stronger response to hydrogen gas with a more pronounced diode behavior of the currentvoltage characteristics at high temperatures of ∼500°C than single-layer ion-implanted structures. Furthermore, double-layer structures exhibit higher reproducibility of the current-voltage characteristic parameters during thermal cycling in a hydrogen-containing medium than ordinary thin-film structures on SiC substrates. The chemical state of ion-implanted platinum and the structure of thin-film layers after long-term testing are studied under harsh conditions. Possible mechanisms of the effect of platinum on the current flow in the ion-implanted layer and its dependence on the composition of the surrounding gaseous medium are considered.
18 schema:genre research_article
19 schema:inLanguage en
20 schema:isAccessibleForFree false
21 schema:isPartOf N3f3f1fb891a94690b9149507339cff50
22 Na60e270acfb74e8396da1f798f3b108e
23 sg:journal.1136692
24 schema:name On the features of hydrogen detection by a semiconductor structure grown on a 6H-SiC substrate by the combined method of platinum ion implantation and deposition
25 schema:pagination 602-611
26 schema:productId N267eb82caa0e4f97bbc74dcce0b995ce
27 Nabbf5446c82d46cca109f2b55b937890
28 Nfc4fb43e7ff647e2a8d32633c8015382
29 schema:sameAs https://app.dimensions.ai/details/publication/pub.1047994227
30 https://doi.org/10.1134/s106378261405025x
31 schema:sdDatePublished 2019-04-10T14:59
32 schema:sdLicense https://scigraph.springernature.com/explorer/license/
33 schema:sdPublisher Nfc70af8d18d443cdb067e3c8bf3207d5
34 schema:url http://link.springer.com/10.1134%2FS106378261405025X
35 sgo:license sg:explorer/license/
36 sgo:sdDataset articles
37 rdf:type schema:ScholarlyArticle
38 N267eb82caa0e4f97bbc74dcce0b995ce schema:name doi
39 schema:value 10.1134/s106378261405025x
40 rdf:type schema:PropertyValue
41 N3004de7c767d44ef88d784ee1befea91 rdf:first sg:person.014716620177.77
42 rdf:rest Nbae6c01cba8b4b6db82b5e95009f8b81
43 N3f3f1fb891a94690b9149507339cff50 schema:volumeNumber 48
44 rdf:type schema:PublicationVolume
45 N4ebaa88a8de64c5692108d8108f8e4e6 rdf:first sg:person.016233223543.77
46 rdf:rest rdf:nil
47 N6771d73b78bd49d0bb086fd40de6f999 rdf:first sg:person.016437655111.05
48 rdf:rest Na1afd1ba453847daab9e626a58c63691
49 Na1afd1ba453847daab9e626a58c63691 rdf:first sg:person.015512456231.70
50 rdf:rest N3004de7c767d44ef88d784ee1befea91
51 Na60e270acfb74e8396da1f798f3b108e schema:issueNumber 5
52 rdf:type schema:PublicationIssue
53 Nabbf5446c82d46cca109f2b55b937890 schema:name dimensions_id
54 schema:value pub.1047994227
55 rdf:type schema:PropertyValue
56 Nbae6c01cba8b4b6db82b5e95009f8b81 rdf:first sg:person.015721576231.51
57 rdf:rest N4ebaa88a8de64c5692108d8108f8e4e6
58 Nfc4fb43e7ff647e2a8d32633c8015382 schema:name readcube_id
59 schema:value e4a2763e4055e4b37e330f11f878b5f0e1473491f1efd47c76804ae651bc8d1a
60 rdf:type schema:PropertyValue
61 Nfc70af8d18d443cdb067e3c8bf3207d5 schema:name Springer Nature - SN SciGraph project
62 rdf:type schema:Organization
63 anzsrc-for:09 schema:inDefinedTermSet anzsrc-for:
64 schema:name Engineering
65 rdf:type schema:DefinedTerm
66 anzsrc-for:0912 schema:inDefinedTermSet anzsrc-for:
67 schema:name Materials Engineering
68 rdf:type schema:DefinedTerm
69 sg:journal.1136692 schema:issn 1063-7826
70 1090-6479
71 schema:name Semiconductors
72 rdf:type schema:Periodical
73 sg:person.014716620177.77 schema:affiliation https://www.grid.ac/institutes/grid.183446.c
74 schema:familyName Romanov
75 schema:givenName R. I.
76 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014716620177.77
77 rdf:type schema:Person
78 sg:person.015512456231.70 schema:affiliation https://www.grid.ac/institutes/grid.446318.c
79 schema:familyName Grigoriev
80 schema:givenName S. N.
81 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015512456231.70
82 rdf:type schema:Person
83 sg:person.015721576231.51 schema:affiliation https://www.grid.ac/institutes/grid.183446.c
84 schema:familyName Fominski
85 schema:givenName V. Yu.
86 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015721576231.51
87 rdf:type schema:Person
88 sg:person.016233223543.77 schema:affiliation https://www.grid.ac/institutes/grid.183446.c
89 schema:familyName Grigoriev
90 schema:givenName V. V.
91 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016233223543.77
92 rdf:type schema:Person
93 sg:person.016437655111.05 schema:affiliation https://www.grid.ac/institutes/grid.183446.c
94 schema:familyName Zuev
95 schema:givenName V. V.
96 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016437655111.05
97 rdf:type schema:Person
98 sg:pub.10.1134/s1063782610040226 schema:sameAs https://app.dimensions.ai/details/publication/pub.1045176569
99 https://doi.org/10.1134/s1063782610040226
100 rdf:type schema:CreativeWork
101 sg:pub.10.1134/s1063782611050095 schema:sameAs https://app.dimensions.ai/details/publication/pub.1015909167
102 https://doi.org/10.1134/s1063782611050095
103 rdf:type schema:CreativeWork
104 sg:pub.10.1134/s106378341303013x schema:sameAs https://app.dimensions.ai/details/publication/pub.1012157044
105 https://doi.org/10.1134/s106378341303013x
106 rdf:type schema:CreativeWork
107 sg:pub.10.1134/s1063784207110151 schema:sameAs https://app.dimensions.ai/details/publication/pub.1023989538
108 https://doi.org/10.1134/s1063784207110151
109 rdf:type schema:CreativeWork
110 https://doi.org/10.1016/j.snb.2008.03.011 schema:sameAs https://app.dimensions.ai/details/publication/pub.1039097176
111 rdf:type schema:CreativeWork
112 https://doi.org/10.1016/j.snb.2010.09.059 schema:sameAs https://app.dimensions.ai/details/publication/pub.1009516035
113 rdf:type schema:CreativeWork
114 https://doi.org/10.1016/j.snb.2012.12.059 schema:sameAs https://app.dimensions.ai/details/publication/pub.1047599983
115 rdf:type schema:CreativeWork
116 https://doi.org/10.1016/j.sse.2005.01.015 schema:sameAs https://app.dimensions.ai/details/publication/pub.1049661946
117 rdf:type schema:CreativeWork
118 https://doi.org/10.1016/s0042-207x(01)00419-5 schema:sameAs https://app.dimensions.ai/details/publication/pub.1028235790
119 rdf:type schema:CreativeWork
120 https://doi.org/10.1016/s0925-4005(00)00290-2 schema:sameAs https://app.dimensions.ai/details/publication/pub.1049665843
121 rdf:type schema:CreativeWork
122 https://doi.org/10.1063/1.1319165 schema:sameAs https://app.dimensions.ai/details/publication/pub.1057694033
123 rdf:type schema:CreativeWork
124 https://www.grid.ac/institutes/grid.183446.c schema:alternateName Moscow Engineering Physics Institute
125 schema:name National Research Nuclear University “MEPhI”, Kashirskoe sh. 31, 115409, Moscow, Russia
126 rdf:type schema:Organization
127 https://www.grid.ac/institutes/grid.446318.c schema:alternateName Moscow State Technological University
128 schema:name Moscow State University of Technology “STANKIN”, Vadkovskii per. 1, 127994, Moscow, Russia
129 rdf:type schema:Organization
 




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