Ontology type: schema:ScholarlyArticle
2014-05-07
AUTHORSM. A. Mintairov, V. V. Evstropov, N. A. Kalyuzhnyy, S. A. Mintairov, M. Z. Shvarts, N. Kh. Timoshina, R. A. Salii, V. M. Lantratov
ABSTRACTThe paper is focused on the fundamental loss in the nongenerating (residual) part of multi-junction solar cells. A method for determining the current-voltage characteristic of the residual part of solar cells is suggested and substantiated. The method is a generalization of the technique applicable to single-junction solar photovoltaic converters. The imbalance of photogenerated currents and the luminescence coupling between subcells is taken into account, which makes it possible to apply the suggested method to multi-junction solar cells. The method is applied to single-junction (InGaP, GaAs, Ge) and triple-junction (InGaP/GaAs/Ge) solar cells. Two types of current-voltage characteristics I–V are revealed and empirical laws for these characteristics are found. The first type shows a monotonic superlinearity, J ∝ Vn (n ≈ 1.3–1.4), and is due to spreading resistance. The second type is only observed for triple-junction solar cells and has the form of a double-exponential dependence with a sublinear initial portion, J ∝ [exp(V/E1) − exp(−V/E2)], with E1 ≈ 0.35 V and E2 ≈ 0.15–0.30 V. As a result, it is found that the charge transport in the residual part of multi-junction solar cells is limited not only by the spreading resistance, but also by other factors, e.g., by isotype heterointerfaces. More... »
PAGES653-658
http://scigraph.springernature.com/pub.10.1134/s1063782614050133
DOIhttp://dx.doi.org/10.1134/s1063782614050133
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