Subtractive method for obtaining the dark current-voltage characteristic and its types for the residual (nongenerating) part of a multi-junction solar ... View Full Text


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Article Info

DATE

2014-05-07

AUTHORS

M. A. Mintairov, V. V. Evstropov, N. A. Kalyuzhnyy, S. A. Mintairov, M. Z. Shvarts, N. Kh. Timoshina, R. A. Salii, V. M. Lantratov

ABSTRACT

The paper is focused on the fundamental loss in the nongenerating (residual) part of multi-junction solar cells. A method for determining the current-voltage characteristic of the residual part of solar cells is suggested and substantiated. The method is a generalization of the technique applicable to single-junction solar photovoltaic converters. The imbalance of photogenerated currents and the luminescence coupling between subcells is taken into account, which makes it possible to apply the suggested method to multi-junction solar cells. The method is applied to single-junction (InGaP, GaAs, Ge) and triple-junction (InGaP/GaAs/Ge) solar cells. Two types of current-voltage characteristics I–V are revealed and empirical laws for these characteristics are found. The first type shows a monotonic superlinearity, J ∝ Vn (n ≈ 1.3–1.4), and is due to spreading resistance. The second type is only observed for triple-junction solar cells and has the form of a double-exponential dependence with a sublinear initial portion, J ∝ [exp(V/E1) − exp(−V/E2)], with E1 ≈ 0.35 V and E2 ≈ 0.15–0.30 V. As a result, it is found that the charge transport in the residual part of multi-junction solar cells is limited not only by the spreading resistance, but also by other factors, e.g., by isotype heterointerfaces. More... »

PAGES

653-658

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782614050133

DOI

http://dx.doi.org/10.1134/s1063782614050133

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1041982366


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