Prospects for the development of high-power field-effect transistors based on heterostructures with donor-acceptor doping View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2014-05-07

AUTHORS

V. M. Lukashin, A. B. Pashkovskii, K. S. Zhuravlev, A. I. Toropov, V. G. Lapin, E. I. Golant, A. A. Kapralova

ABSTRACT

We report the first results on the development of high-power field-effect transistors on gallium-arsenide heterosrtuctures with a quantum well and additional potential barriers, formed from layers with different doping types, optimized to reduce transverse spatial electron transport and enhance quantum confinement. The transistors yield a doubled output power at a trapezoidal gate length of 0.4–0.5 μm and a total gate width of 0.8 mm at a frequency of 10 GHz in the continuous mode of operation. The gain exceeds 9.5 dB at a specific output power above 1.6 W/mm and a power-added efficiency of up to 50%. Prospects for the development of such devices are presented. More... »

PAGES

666-674

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782614050121

DOI

http://dx.doi.org/10.1134/s1063782614050121

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1046958467


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0206", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Quantum Physics", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Scientific and Production Corporation \u201cIstok\u201d, 141195, Moscow oblast, Fryazino, Russia", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "Scientific and Production Corporation \u201cIstok\u201d, 141195, Moscow oblast, Fryazino, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lukashin", 
        "givenName": "V. M.", 
        "id": "sg:person.016016754713.81", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016016754713.81"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Scientific and Production Corporation \u201cIstok\u201d, 141195, Moscow oblast, Fryazino, Russia", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "Scientific and Production Corporation \u201cIstok\u201d, 141195, Moscow oblast, Fryazino, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Pashkovskii", 
        "givenName": "A. B.", 
        "id": "sg:person.013626433313.35", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013626433313.35"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, 630090, Novosibirsk, Russia", 
          "id": "http://www.grid.ac/institutes/grid.415877.8", 
          "name": [
            "Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, 630090, Novosibirsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Zhuravlev", 
        "givenName": "K. S.", 
        "id": "sg:person.013330106605.06", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013330106605.06"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, 630090, Novosibirsk, Russia", 
          "id": "http://www.grid.ac/institutes/grid.415877.8", 
          "name": [
            "Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, 630090, Novosibirsk, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Toropov", 
        "givenName": "A. I.", 
        "id": "sg:person.013540330162.90", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013540330162.90"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Scientific and Production Corporation \u201cIstok\u201d, 141195, Moscow oblast, Fryazino, Russia", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "Scientific and Production Corporation \u201cIstok\u201d, 141195, Moscow oblast, Fryazino, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lapin", 
        "givenName": "V. G.", 
        "id": "sg:person.012163062014.35", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012163062014.35"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Scientific and Production Corporation \u201cIstok\u201d, 141195, Moscow oblast, Fryazino, Russia", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "Scientific and Production Corporation \u201cIstok\u201d, 141195, Moscow oblast, Fryazino, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Golant", 
        "givenName": "E. I.", 
        "id": "sg:person.014650760127.50", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014650760127.50"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Scientific and Production Corporation \u201cIstok\u201d, 141195, Moscow oblast, Fryazino, Russia", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "Scientific and Production Corporation \u201cIstok\u201d, 141195, Moscow oblast, Fryazino, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kapralova", 
        "givenName": "A. A.", 
        "id": "sg:person.011615041450.32", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011615041450.32"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1134/s1063782608090145", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1042325508", 
          "https://doi.org/10.1134/s1063782608090145"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063785012090088", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1022266657", 
          "https://doi.org/10.1134/s1063785012090088"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782609010217", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1019344972", 
          "https://doi.org/10.1134/s1063782609010217"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2014-05-07", 
    "datePublishedReg": "2014-05-07", 
    "description": "We report the first results on the development of high-power field-effect transistors on gallium-arsenide heterosrtuctures with a quantum well and additional potential barriers, formed from layers with different doping types, optimized to reduce transverse spatial electron transport and enhance quantum confinement. The transistors yield a doubled output power at a trapezoidal gate length of 0.4\u20130.5 \u03bcm and a total gate width of 0.8 mm at a frequency of 10 GHz in the continuous mode of operation. The gain exceeds 9.5 dB at a specific output power above 1.6 W/mm and a power-added efficiency of up to 50%. Prospects for the development of such devices are presented.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063782614050121", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "5", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "48"
      }
    ], 
    "keywords": [
      "high-power field-effect transistors", 
      "field-effect transistors", 
      "donor\u2013acceptor doping", 
      "additional potential barrier", 
      "output power", 
      "quantum confinement", 
      "power-added efficiency", 
      "specific output power", 
      "electron transport", 
      "total gate width", 
      "different doping types", 
      "doping type", 
      "potential barrier", 
      "gate width", 
      "first results", 
      "gate length", 
      "such devices", 
      "transistors", 
      "continuous mode", 
      "heterostructures", 
      "confinement", 
      "doping", 
      "width", 
      "power", 
      "layer", 
      "GHz", 
      "devices", 
      "prospects", 
      "mode", 
      "efficiency", 
      "operation", 
      "transport", 
      "dB", 
      "frequency", 
      "barriers", 
      "development", 
      "results", 
      "length", 
      "gain", 
      "types", 
      "gallium-arsenide heterosrtuctures", 
      "heterosrtuctures", 
      "transverse spatial electron transport", 
      "spatial electron transport", 
      "trapezoidal gate length"
    ], 
    "name": "Prospects for the development of high-power field-effect transistors based on heterostructures with donor-acceptor doping", 
    "pagination": "666-674", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1046958467"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782614050121"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782614050121", 
      "https://app.dimensions.ai/details/publication/pub.1046958467"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2021-12-01T19:31", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20211201/entities/gbq_results/article/article_646.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063782614050121"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/s1063782614050121'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/s1063782614050121'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/s1063782614050121'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/s1063782614050121'


 

This table displays all metadata directly associated to this object as RDF triples.

160 TRIPLES      22 PREDICATES      73 URIs      62 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782614050121 schema:about anzsrc-for:02
2 anzsrc-for:0206
3 schema:author Nb508ac625a8446dc87a3324c1bd9f2df
4 schema:citation sg:pub.10.1134/s1063782608090145
5 sg:pub.10.1134/s1063782609010217
6 sg:pub.10.1134/s1063785012090088
7 schema:datePublished 2014-05-07
8 schema:datePublishedReg 2014-05-07
9 schema:description We report the first results on the development of high-power field-effect transistors on gallium-arsenide heterosrtuctures with a quantum well and additional potential barriers, formed from layers with different doping types, optimized to reduce transverse spatial electron transport and enhance quantum confinement. The transistors yield a doubled output power at a trapezoidal gate length of 0.4–0.5 μm and a total gate width of 0.8 mm at a frequency of 10 GHz in the continuous mode of operation. The gain exceeds 9.5 dB at a specific output power above 1.6 W/mm and a power-added efficiency of up to 50%. Prospects for the development of such devices are presented.
10 schema:genre article
11 schema:inLanguage en
12 schema:isAccessibleForFree false
13 schema:isPartOf N70d53093984a4e04b465e14bcb34046f
14 Nb48efbd6724643b383110fc9d79729b5
15 sg:journal.1136692
16 schema:keywords GHz
17 additional potential barrier
18 barriers
19 confinement
20 continuous mode
21 dB
22 development
23 devices
24 different doping types
25 donor–acceptor doping
26 doping
27 doping type
28 efficiency
29 electron transport
30 field-effect transistors
31 first results
32 frequency
33 gain
34 gallium-arsenide heterosrtuctures
35 gate length
36 gate width
37 heterosrtuctures
38 heterostructures
39 high-power field-effect transistors
40 layer
41 length
42 mode
43 operation
44 output power
45 potential barrier
46 power
47 power-added efficiency
48 prospects
49 quantum confinement
50 results
51 spatial electron transport
52 specific output power
53 such devices
54 total gate width
55 transistors
56 transport
57 transverse spatial electron transport
58 trapezoidal gate length
59 types
60 width
61 schema:name Prospects for the development of high-power field-effect transistors based on heterostructures with donor-acceptor doping
62 schema:pagination 666-674
63 schema:productId N82d516e9956243a0badbd0d072f3fe6f
64 N869187f1314f4442b5e716cc0a7855ce
65 schema:sameAs https://app.dimensions.ai/details/publication/pub.1046958467
66 https://doi.org/10.1134/s1063782614050121
67 schema:sdDatePublished 2021-12-01T19:31
68 schema:sdLicense https://scigraph.springernature.com/explorer/license/
69 schema:sdPublisher N26b068b947c948b1b7eace6ebd618255
70 schema:url https://doi.org/10.1134/s1063782614050121
71 sgo:license sg:explorer/license/
72 sgo:sdDataset articles
73 rdf:type schema:ScholarlyArticle
74 N26b068b947c948b1b7eace6ebd618255 schema:name Springer Nature - SN SciGraph project
75 rdf:type schema:Organization
76 N70d53093984a4e04b465e14bcb34046f schema:volumeNumber 48
77 rdf:type schema:PublicationVolume
78 N7779f77c67484d0cb02d07e2c8f66ae7 rdf:first sg:person.014650760127.50
79 rdf:rest N9347973052e94c438af38d900a9681e4
80 N82d516e9956243a0badbd0d072f3fe6f schema:name dimensions_id
81 schema:value pub.1046958467
82 rdf:type schema:PropertyValue
83 N869187f1314f4442b5e716cc0a7855ce schema:name doi
84 schema:value 10.1134/s1063782614050121
85 rdf:type schema:PropertyValue
86 N8be5ae75f4884302ac6339c109547eb1 rdf:first sg:person.012163062014.35
87 rdf:rest N7779f77c67484d0cb02d07e2c8f66ae7
88 N8e9f889775194f05ac9c1a2ea4041c17 rdf:first sg:person.013330106605.06
89 rdf:rest Nb11c11e3623445379e3e373d78f4d152
90 N9347973052e94c438af38d900a9681e4 rdf:first sg:person.011615041450.32
91 rdf:rest rdf:nil
92 N9c24dedc307a41c1beaec10c0cb95dff rdf:first sg:person.013626433313.35
93 rdf:rest N8e9f889775194f05ac9c1a2ea4041c17
94 Nb11c11e3623445379e3e373d78f4d152 rdf:first sg:person.013540330162.90
95 rdf:rest N8be5ae75f4884302ac6339c109547eb1
96 Nb48efbd6724643b383110fc9d79729b5 schema:issueNumber 5
97 rdf:type schema:PublicationIssue
98 Nb508ac625a8446dc87a3324c1bd9f2df rdf:first sg:person.016016754713.81
99 rdf:rest N9c24dedc307a41c1beaec10c0cb95dff
100 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
101 schema:name Physical Sciences
102 rdf:type schema:DefinedTerm
103 anzsrc-for:0206 schema:inDefinedTermSet anzsrc-for:
104 schema:name Quantum Physics
105 rdf:type schema:DefinedTerm
106 sg:journal.1136692 schema:issn 1063-7826
107 1090-6479
108 schema:name Semiconductors
109 schema:publisher Pleiades Publishing
110 rdf:type schema:Periodical
111 sg:person.011615041450.32 schema:affiliation grid-institutes:None
112 schema:familyName Kapralova
113 schema:givenName A. A.
114 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011615041450.32
115 rdf:type schema:Person
116 sg:person.012163062014.35 schema:affiliation grid-institutes:None
117 schema:familyName Lapin
118 schema:givenName V. G.
119 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012163062014.35
120 rdf:type schema:Person
121 sg:person.013330106605.06 schema:affiliation grid-institutes:grid.415877.8
122 schema:familyName Zhuravlev
123 schema:givenName K. S.
124 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013330106605.06
125 rdf:type schema:Person
126 sg:person.013540330162.90 schema:affiliation grid-institutes:grid.415877.8
127 schema:familyName Toropov
128 schema:givenName A. I.
129 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013540330162.90
130 rdf:type schema:Person
131 sg:person.013626433313.35 schema:affiliation grid-institutes:None
132 schema:familyName Pashkovskii
133 schema:givenName A. B.
134 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013626433313.35
135 rdf:type schema:Person
136 sg:person.014650760127.50 schema:affiliation grid-institutes:None
137 schema:familyName Golant
138 schema:givenName E. I.
139 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014650760127.50
140 rdf:type schema:Person
141 sg:person.016016754713.81 schema:affiliation grid-institutes:None
142 schema:familyName Lukashin
143 schema:givenName V. M.
144 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016016754713.81
145 rdf:type schema:Person
146 sg:pub.10.1134/s1063782608090145 schema:sameAs https://app.dimensions.ai/details/publication/pub.1042325508
147 https://doi.org/10.1134/s1063782608090145
148 rdf:type schema:CreativeWork
149 sg:pub.10.1134/s1063782609010217 schema:sameAs https://app.dimensions.ai/details/publication/pub.1019344972
150 https://doi.org/10.1134/s1063782609010217
151 rdf:type schema:CreativeWork
152 sg:pub.10.1134/s1063785012090088 schema:sameAs https://app.dimensions.ai/details/publication/pub.1022266657
153 https://doi.org/10.1134/s1063785012090088
154 rdf:type schema:CreativeWork
155 grid-institutes:None schema:alternateName Scientific and Production Corporation “Istok”, 141195, Moscow oblast, Fryazino, Russia
156 schema:name Scientific and Production Corporation “Istok”, 141195, Moscow oblast, Fryazino, Russia
157 rdf:type schema:Organization
158 grid-institutes:grid.415877.8 schema:alternateName Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, 630090, Novosibirsk, Russia
159 schema:name Rzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, 630090, Novosibirsk, Russia
160 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...