Study of the electrical properties of individual (Ga,Mn)As nanowires View Full Text


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Article Info

DATE

2014-03-07

AUTHORS

A. D. Bouravleuv, N. V. Sibirev, E. P. Gilstein, P. N. Brunkov, I. S. Mukhin, M. Tchernycheva, A. I. Khrebtov, Yu. B. Samsonenko, G. E. Cirlin

ABSTRACT

Arrays of (Ga, Mn)As nanowire crystals are synthesized by molecular-beam epitaxy. Electronbeam lithography made possible the fabrication of electric contacts to individual nanowires. The influence of the annealing temperature on the properties of the contacts is studied. The optical annealing temperature is determined to be 160°C. It is found that an increase in the annealing temperature yields structure degradation. From studies of the current-voltage characteristics of the individual nanowire structures, a number of their electrical parameters, such as the resistivity and the mobility of charge carriers are determined. More... »

PAGES

344-349

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782614030075

DOI

http://dx.doi.org/10.1134/s1063782614030075

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1014836988


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0204", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Condensed Matter Physics", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0206", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Quantum Physics", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "St. Petersburg State University, 198504, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.15447.33", 
          "name": [
            "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
            "St. Petersburg State University, 198504, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Bouravleuv", 
        "givenName": "A. D.", 
        "id": "sg:person.012577710235.67", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012577710235.67"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "St. Petersburg State University, 198504, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.15447.33", 
          "name": [
            "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
            "Nanotechnology Research and Education Center, St. Petersburg Academic University, 194021, St. Petersburg, Russia", 
            "St. Petersburg State University, 198504, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Sibirev", 
        "givenName": "N. V.", 
        "id": "sg:person.014160371011.24", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014160371011.24"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Nanotechnology Research and Education Center, St. Petersburg Academic University, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.35135.31", 
          "name": [
            "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
            "Nanotechnology Research and Education Center, St. Petersburg Academic University, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Gilstein", 
        "givenName": "E. P.", 
        "id": "sg:person.016470757323.08", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016470757323.08"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Nanotechnology Research and Education Center, St. Petersburg Academic University, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.35135.31", 
          "name": [
            "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
            "Nanotechnology Research and Education Center, St. Petersburg Academic University, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Brunkov", 
        "givenName": "P. N.", 
        "id": "sg:person.011771360023.05", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011771360023.05"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute for Analytical Instrumentation, Russian Academy of Sciences, 190103, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.434964.8", 
          "name": [
            "Nanotechnology Research and Education Center, St. Petersburg Academic University, 194021, St. Petersburg, Russia", 
            "Institute for Analytical Instrumentation, Russian Academy of Sciences, 190103, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Mukhin", 
        "givenName": "I. S.", 
        "id": "sg:person.01326511140.33", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01326511140.33"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institut d\u2019Electronique Fondamentale UMR CNRS 8622, Universit\u00e9 Paris Sud 11, 91405, Orsay Cedex, France", 
          "id": "http://www.grid.ac/institutes/grid.5842.b", 
          "name": [
            "Institut d\u2019Electronique Fondamentale UMR CNRS 8622, Universit\u00e9 Paris Sud 11, 91405, Orsay Cedex, France"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Tchernycheva", 
        "givenName": "M.", 
        "id": "sg:person.0101666521.77", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0101666521.77"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Nanotechnology Research and Education Center, St. Petersburg Academic University, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.35135.31", 
          "name": [
            "Nanotechnology Research and Education Center, St. Petersburg Academic University, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Khrebtov", 
        "givenName": "A. I.", 
        "id": "sg:person.012364152065.19", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012364152065.19"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Institute for Analytical Instrumentation, Russian Academy of Sciences, 190103, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.434964.8", 
          "name": [
            "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
            "Institute for Analytical Instrumentation, Russian Academy of Sciences, 190103, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Samsonenko", 
        "givenName": "Yu. B.", 
        "id": "sg:person.016561315174.96", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016561315174.96"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "St. Petersburg State University, 198504, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.15447.33", 
          "name": [
            "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
            "St. Petersburg State University, 198504, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Cirlin", 
        "givenName": "G. E.", 
        "id": "sg:person.014222264064.92", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014222264064.92"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1038/35050040", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1006678613", 
          "https://doi.org/10.1038/35050040"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782613060079", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1004045005", 
          "https://doi.org/10.1134/s1063782613060079"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063785012090040", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1034259119", 
          "https://doi.org/10.1134/s1063785012090040"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782611040191", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1024878902", 
          "https://doi.org/10.1134/s1063782611040191"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782612020042", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1034982789", 
          "https://doi.org/10.1134/s1063782612020042"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/ncomms2426", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1000497854", 
          "https://doi.org/10.1038/ncomms2426"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1038/nnano.2012.190", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1040594763", 
          "https://doi.org/10.1038/nnano.2012.190"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2014-03-07", 
    "datePublishedReg": "2014-03-07", 
    "description": "Arrays of (Ga, Mn)As nanowire crystals are synthesized by molecular-beam epitaxy. Electronbeam lithography made possible the fabrication of electric contacts to individual nanowires. The influence of the annealing temperature on the properties of the contacts is studied. The optical annealing temperature is determined to be 160\u00b0C. It is found that an increase in the annealing temperature yields structure degradation. From studies of the current-voltage characteristics of the individual nanowire structures, a number of their electrical parameters, such as the resistivity and the mobility of charge carriers are determined.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063782614030075", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "3", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "48"
      }
    ], 
    "keywords": [
      "annealing temperature", 
      "molecular beam epitaxy", 
      "nanowire structures", 
      "individual nanowires", 
      "nanowire crystals", 
      "current-voltage characteristics", 
      "electrical properties", 
      "electric contact", 
      "charge carriers", 
      "electrical parameters", 
      "structure degradation", 
      "nanowires", 
      "lithography", 
      "fabrication", 
      "temperature", 
      "gas", 
      "epitaxy", 
      "array", 
      "properties", 
      "carriers", 
      "resistivity", 
      "contact", 
      "mobility", 
      "degradation", 
      "parameters", 
      "crystals", 
      "structure", 
      "characteristics", 
      "influence", 
      "increase", 
      "study", 
      "number", 
      "individuals"
    ], 
    "name": "Study of the electrical properties of individual (Ga,Mn)As nanowires", 
    "pagination": "344-349", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1014836988"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782614030075"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782614030075", 
      "https://app.dimensions.ai/details/publication/pub.1014836988"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2022-05-20T07:28", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20220519/entities/gbq_results/article/article_614.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063782614030075"
  }
]
 

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This table displays all metadata directly associated to this object as RDF triples.

193 TRIPLES      22 PREDICATES      66 URIs      50 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782614030075 schema:about anzsrc-for:02
2 anzsrc-for:0204
3 anzsrc-for:0206
4 schema:author Nb8d3fcc8d65e44d1a35db730720c4e6c
5 schema:citation sg:pub.10.1038/35050040
6 sg:pub.10.1038/ncomms2426
7 sg:pub.10.1038/nnano.2012.190
8 sg:pub.10.1134/s1063782611040191
9 sg:pub.10.1134/s1063782612020042
10 sg:pub.10.1134/s1063782613060079
11 sg:pub.10.1134/s1063785012090040
12 schema:datePublished 2014-03-07
13 schema:datePublishedReg 2014-03-07
14 schema:description Arrays of (Ga, Mn)As nanowire crystals are synthesized by molecular-beam epitaxy. Electronbeam lithography made possible the fabrication of electric contacts to individual nanowires. The influence of the annealing temperature on the properties of the contacts is studied. The optical annealing temperature is determined to be 160°C. It is found that an increase in the annealing temperature yields structure degradation. From studies of the current-voltage characteristics of the individual nanowire structures, a number of their electrical parameters, such as the resistivity and the mobility of charge carriers are determined.
15 schema:genre article
16 schema:inLanguage en
17 schema:isAccessibleForFree false
18 schema:isPartOf Nb24ea0a8b4444ed5876c7ddd058bd1a7
19 Ncacd20f79ff146ee94707f9fd4a3e9be
20 sg:journal.1136692
21 schema:keywords annealing temperature
22 array
23 carriers
24 characteristics
25 charge carriers
26 contact
27 crystals
28 current-voltage characteristics
29 degradation
30 electric contact
31 electrical parameters
32 electrical properties
33 epitaxy
34 fabrication
35 gas
36 increase
37 individual nanowires
38 individuals
39 influence
40 lithography
41 mobility
42 molecular beam epitaxy
43 nanowire crystals
44 nanowire structures
45 nanowires
46 number
47 parameters
48 properties
49 resistivity
50 structure
51 structure degradation
52 study
53 temperature
54 schema:name Study of the electrical properties of individual (Ga,Mn)As nanowires
55 schema:pagination 344-349
56 schema:productId Nd98a116e4ea04ea8875595efffc6b082
57 Ne06eecfade1c48f88a00c404ab7638ef
58 schema:sameAs https://app.dimensions.ai/details/publication/pub.1014836988
59 https://doi.org/10.1134/s1063782614030075
60 schema:sdDatePublished 2022-05-20T07:28
61 schema:sdLicense https://scigraph.springernature.com/explorer/license/
62 schema:sdPublisher N2d2e84329fce42ffbba84c6a142d3ef2
63 schema:url https://doi.org/10.1134/s1063782614030075
64 sgo:license sg:explorer/license/
65 sgo:sdDataset articles
66 rdf:type schema:ScholarlyArticle
67 N0b7138ce54e14164b7a0d1d2cb369042 rdf:first sg:person.014160371011.24
68 rdf:rest N6c3aa01f32d14837ba836f1c9c030774
69 N2d2e84329fce42ffbba84c6a142d3ef2 schema:name Springer Nature - SN SciGraph project
70 rdf:type schema:Organization
71 N39d477041708430b8e0b73d6cf4c5d10 rdf:first sg:person.012364152065.19
72 rdf:rest Ncba79d3873c142ab9cf82072c5649d87
73 N67353e827d56482babf10f7eba0d2f20 rdf:first sg:person.0101666521.77
74 rdf:rest N39d477041708430b8e0b73d6cf4c5d10
75 N6c3aa01f32d14837ba836f1c9c030774 rdf:first sg:person.016470757323.08
76 rdf:rest N7b248221974d497abbdd5875a9fd5860
77 N7b248221974d497abbdd5875a9fd5860 rdf:first sg:person.011771360023.05
78 rdf:rest N85a5cbae19da4fb9a14fcc79bae1d257
79 N7e3b1fcd30ba406e95201afb80feef06 rdf:first sg:person.014222264064.92
80 rdf:rest rdf:nil
81 N85a5cbae19da4fb9a14fcc79bae1d257 rdf:first sg:person.01326511140.33
82 rdf:rest N67353e827d56482babf10f7eba0d2f20
83 Nb24ea0a8b4444ed5876c7ddd058bd1a7 schema:volumeNumber 48
84 rdf:type schema:PublicationVolume
85 Nb8d3fcc8d65e44d1a35db730720c4e6c rdf:first sg:person.012577710235.67
86 rdf:rest N0b7138ce54e14164b7a0d1d2cb369042
87 Ncacd20f79ff146ee94707f9fd4a3e9be schema:issueNumber 3
88 rdf:type schema:PublicationIssue
89 Ncba79d3873c142ab9cf82072c5649d87 rdf:first sg:person.016561315174.96
90 rdf:rest N7e3b1fcd30ba406e95201afb80feef06
91 Nd98a116e4ea04ea8875595efffc6b082 schema:name dimensions_id
92 schema:value pub.1014836988
93 rdf:type schema:PropertyValue
94 Ne06eecfade1c48f88a00c404ab7638ef schema:name doi
95 schema:value 10.1134/s1063782614030075
96 rdf:type schema:PropertyValue
97 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
98 schema:name Physical Sciences
99 rdf:type schema:DefinedTerm
100 anzsrc-for:0204 schema:inDefinedTermSet anzsrc-for:
101 schema:name Condensed Matter Physics
102 rdf:type schema:DefinedTerm
103 anzsrc-for:0206 schema:inDefinedTermSet anzsrc-for:
104 schema:name Quantum Physics
105 rdf:type schema:DefinedTerm
106 sg:journal.1136692 schema:issn 1063-7826
107 1090-6479
108 schema:name Semiconductors
109 schema:publisher Pleiades Publishing
110 rdf:type schema:Periodical
111 sg:person.0101666521.77 schema:affiliation grid-institutes:grid.5842.b
112 schema:familyName Tchernycheva
113 schema:givenName M.
114 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.0101666521.77
115 rdf:type schema:Person
116 sg:person.011771360023.05 schema:affiliation grid-institutes:grid.35135.31
117 schema:familyName Brunkov
118 schema:givenName P. N.
119 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011771360023.05
120 rdf:type schema:Person
121 sg:person.012364152065.19 schema:affiliation grid-institutes:grid.35135.31
122 schema:familyName Khrebtov
123 schema:givenName A. I.
124 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012364152065.19
125 rdf:type schema:Person
126 sg:person.012577710235.67 schema:affiliation grid-institutes:grid.15447.33
127 schema:familyName Bouravleuv
128 schema:givenName A. D.
129 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012577710235.67
130 rdf:type schema:Person
131 sg:person.01326511140.33 schema:affiliation grid-institutes:grid.434964.8
132 schema:familyName Mukhin
133 schema:givenName I. S.
134 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01326511140.33
135 rdf:type schema:Person
136 sg:person.014160371011.24 schema:affiliation grid-institutes:grid.15447.33
137 schema:familyName Sibirev
138 schema:givenName N. V.
139 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014160371011.24
140 rdf:type schema:Person
141 sg:person.014222264064.92 schema:affiliation grid-institutes:grid.15447.33
142 schema:familyName Cirlin
143 schema:givenName G. E.
144 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014222264064.92
145 rdf:type schema:Person
146 sg:person.016470757323.08 schema:affiliation grid-institutes:grid.35135.31
147 schema:familyName Gilstein
148 schema:givenName E. P.
149 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016470757323.08
150 rdf:type schema:Person
151 sg:person.016561315174.96 schema:affiliation grid-institutes:grid.434964.8
152 schema:familyName Samsonenko
153 schema:givenName Yu. B.
154 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016561315174.96
155 rdf:type schema:Person
156 sg:pub.10.1038/35050040 schema:sameAs https://app.dimensions.ai/details/publication/pub.1006678613
157 https://doi.org/10.1038/35050040
158 rdf:type schema:CreativeWork
159 sg:pub.10.1038/ncomms2426 schema:sameAs https://app.dimensions.ai/details/publication/pub.1000497854
160 https://doi.org/10.1038/ncomms2426
161 rdf:type schema:CreativeWork
162 sg:pub.10.1038/nnano.2012.190 schema:sameAs https://app.dimensions.ai/details/publication/pub.1040594763
163 https://doi.org/10.1038/nnano.2012.190
164 rdf:type schema:CreativeWork
165 sg:pub.10.1134/s1063782611040191 schema:sameAs https://app.dimensions.ai/details/publication/pub.1024878902
166 https://doi.org/10.1134/s1063782611040191
167 rdf:type schema:CreativeWork
168 sg:pub.10.1134/s1063782612020042 schema:sameAs https://app.dimensions.ai/details/publication/pub.1034982789
169 https://doi.org/10.1134/s1063782612020042
170 rdf:type schema:CreativeWork
171 sg:pub.10.1134/s1063782613060079 schema:sameAs https://app.dimensions.ai/details/publication/pub.1004045005
172 https://doi.org/10.1134/s1063782613060079
173 rdf:type schema:CreativeWork
174 sg:pub.10.1134/s1063785012090040 schema:sameAs https://app.dimensions.ai/details/publication/pub.1034259119
175 https://doi.org/10.1134/s1063785012090040
176 rdf:type schema:CreativeWork
177 grid-institutes:grid.15447.33 schema:alternateName St. Petersburg State University, 198504, St. Petersburg, Russia
178 schema:name Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
179 Nanotechnology Research and Education Center, St. Petersburg Academic University, 194021, St. Petersburg, Russia
180 St. Petersburg State University, 198504, St. Petersburg, Russia
181 rdf:type schema:Organization
182 grid-institutes:grid.35135.31 schema:alternateName Nanotechnology Research and Education Center, St. Petersburg Academic University, 194021, St. Petersburg, Russia
183 schema:name Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
184 Nanotechnology Research and Education Center, St. Petersburg Academic University, 194021, St. Petersburg, Russia
185 rdf:type schema:Organization
186 grid-institutes:grid.434964.8 schema:alternateName Institute for Analytical Instrumentation, Russian Academy of Sciences, 190103, St. Petersburg, Russia
187 schema:name Institute for Analytical Instrumentation, Russian Academy of Sciences, 190103, St. Petersburg, Russia
188 Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
189 Nanotechnology Research and Education Center, St. Petersburg Academic University, 194021, St. Petersburg, Russia
190 rdf:type schema:Organization
191 grid-institutes:grid.5842.b schema:alternateName Institut d’Electronique Fondamentale UMR CNRS 8622, Université Paris Sud 11, 91405, Orsay Cedex, France
192 schema:name Institut d’Electronique Fondamentale UMR CNRS 8622, Université Paris Sud 11, 91405, Orsay Cedex, France
193 rdf:type schema:Organization
 




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