Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2014-01-05

AUTHORS

W. V. Lundin, A. E. Nikolaev, A. V. Sakharov, S. O. Usov, E. E. Zavarin, P. N. Brunkov, M. A. Yagovkina, N. A. Cherkashin, A. F. Tsatsulnikov

ABSTRACT

III-N blue LED structures with active regions based on InGaN nanoislands are studied. The structures are grown by metalorganic vapor-phase epitaxy (MOVPE) on GaN layers deposited by various methods for the initial formation of an epitaxial layer. It is shown that, due to strong carrier localization in narrow-gap InGaN nanoislands, the electroluminescence efficiency is independent of the crystal perfection of the material. More... »

PAGES

53-57

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782614010199

DOI

http://dx.doi.org/10.1134/s1063782614010199

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1015570546


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