Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2014-01-05

AUTHORS

W. V. Lundin, A. E. Nikolaev, A. V. Sakharov, S. O. Usov, E. E. Zavarin, P. N. Brunkov, M. A. Yagovkina, N. A. Cherkashin, A. F. Tsatsulnikov

ABSTRACT

III-N blue LED structures with active regions based on InGaN nanoislands are studied. The structures are grown by metalorganic vapor-phase epitaxy (MOVPE) on GaN layers deposited by various methods for the initial formation of an epitaxial layer. It is shown that, due to strong carrier localization in narrow-gap InGaN nanoislands, the electroluminescence efficiency is independent of the crystal perfection of the material. More... »

PAGES

53-57

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782614010199

DOI

http://dx.doi.org/10.1134/s1063782614010199

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1015570546


Indexing Status Check whether this publication has been indexed by Scopus and Web Of Science using the SN Indexing Status Tool
Incoming Citations Browse incoming citations for this publication using opencitations.net

JSON-LD is the canonical representation for SciGraph data.

TIP: You can open this SciGraph record using an external JSON-LD service: JSON-LD Playground Google SDTT

[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0204", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Condensed Matter Physics", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0206", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Quantum Physics", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Scientific and Technological Center for Microelectronics and Submicron Heterostructures, Russian Academy of Sciences, 194012, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.4886.2", 
          "name": [
            "Scientific and Technological Center for Microelectronics and Submicron Heterostructures, Russian Academy of Sciences, 194012, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Lundin", 
        "givenName": "W. V.", 
        "id": "sg:person.013543521751.29", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013543521751.29"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Scientific and Technological Center for Microelectronics and Submicron Heterostructures, Russian Academy of Sciences, 194012, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.4886.2", 
          "name": [
            "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
            "Scientific and Technological Center for Microelectronics and Submicron Heterostructures, Russian Academy of Sciences, 194012, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Nikolaev", 
        "givenName": "A. E.", 
        "id": "sg:person.010050311505.33", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010050311505.33"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Scientific and Technological Center for Microelectronics and Submicron Heterostructures, Russian Academy of Sciences, 194012, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.4886.2", 
          "name": [
            "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
            "Scientific and Technological Center for Microelectronics and Submicron Heterostructures, Russian Academy of Sciences, 194012, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Sakharov", 
        "givenName": "A. V.", 
        "id": "sg:person.010201114167.20", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010201114167.20"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Scientific and Technological Center for Microelectronics and Submicron Heterostructures, Russian Academy of Sciences, 194012, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.4886.2", 
          "name": [
            "Scientific and Technological Center for Microelectronics and Submicron Heterostructures, Russian Academy of Sciences, 194012, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Usov", 
        "givenName": "S. O.", 
        "id": "sg:person.011162335741.78", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011162335741.78"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Scientific and Technological Center for Microelectronics and Submicron Heterostructures, Russian Academy of Sciences, 194012, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.4886.2", 
          "name": [
            "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
            "Scientific and Technological Center for Microelectronics and Submicron Heterostructures, Russian Academy of Sciences, 194012, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Zavarin", 
        "givenName": "E. E.", 
        "id": "sg:person.015451372144.61", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015451372144.61"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Brunkov", 
        "givenName": "P. N.", 
        "id": "sg:person.011771360023.05", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011771360023.05"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Yagovkina", 
        "givenName": "M. A.", 
        "id": "sg:person.016026355533.82", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016026355533.82"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Center for Material Elaboration and Structural Studies (CEMES) of the National Center for Scientific Research (CNRS), 31055, Toulouse, France", 
          "id": "http://www.grid.ac/institutes/None", 
          "name": [
            "Center for Material Elaboration and Structural Studies (CEMES) of the National Center for Scientific Research (CNRS), 31055, Toulouse, France"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Cherkashin", 
        "givenName": "N. A.", 
        "id": "sg:person.01236734145.04", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01236734145.04"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Scientific and Technological Center for Microelectronics and Submicron Heterostructures, Russian Academy of Sciences, 194012, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.4886.2", 
          "name": [
            "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
            "Scientific and Technological Center for Microelectronics and Submicron Heterostructures, Russian Academy of Sciences, 194012, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Tsatsulnikov", 
        "givenName": "A. F.", 
        "id": "sg:person.015475065541.13", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015475065541.13"
        ], 
        "type": "Person"
      }
    ], 
    "citation": [
      {
        "id": "sg:pub.10.1134/s1063782610010215", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1032803191", 
          "https://doi.org/10.1134/s1063782610010215"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782610010161", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1023819198", 
          "https://doi.org/10.1134/s1063782610010161"
        ], 
        "type": "CreativeWork"
      }, 
      {
        "id": "sg:pub.10.1134/s1063782611030079", 
        "sameAs": [
          "https://app.dimensions.ai/details/publication/pub.1038043217", 
          "https://doi.org/10.1134/s1063782611030079"
        ], 
        "type": "CreativeWork"
      }
    ], 
    "datePublished": "2014-01-05", 
    "datePublishedReg": "2014-01-05", 
    "description": "III-N blue LED structures with active regions based on InGaN nanoislands are studied. The structures are grown by metalorganic vapor-phase epitaxy (MOVPE) on GaN layers deposited by various methods for the initial formation of an epitaxial layer. It is shown that, due to strong carrier localization in narrow-gap InGaN nanoislands, the electroluminescence efficiency is independent of the crystal perfection of the material.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063782614010199", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "1", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "48"
      }
    ], 
    "keywords": [
      "metalorganic vapor-phase epitaxy", 
      "epitaxial buffer layers", 
      "buffer layer", 
      "vapor-phase epitaxy", 
      "epitaxial layers", 
      "electroluminescence efficiency", 
      "GaN layers", 
      "structural perfection", 
      "layer", 
      "strong carrier localization", 
      "blue LED", 
      "active region", 
      "efficiency", 
      "nanoislands", 
      "crystal perfection", 
      "carrier localization", 
      "LEDs", 
      "materials", 
      "structure", 
      "epitaxy", 
      "perfection", 
      "initial formation", 
      "dependence", 
      "method", 
      "formation", 
      "region", 
      "localization", 
      "InGaN nanoislands", 
      "narrow-gap InGaN nanoislands", 
      "GaN epitaxial buffer layers"
    ], 
    "name": "Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers", 
    "pagination": "53-57", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1015570546"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782614010199"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782614010199", 
      "https://app.dimensions.ai/details/publication/pub.1015570546"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2021-12-01T19:31", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20211201/entities/gbq_results/article/article_623.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063782614010199"
  }
]
 

Download the RDF metadata as:  json-ld nt turtle xml License info

HOW TO GET THIS DATA PROGRAMMATICALLY:

JSON-LD is a popular format for linked data which is fully compatible with JSON.

curl -H 'Accept: application/ld+json' 'https://scigraph.springernature.com/pub.10.1134/s1063782614010199'

N-Triples is a line-based linked data format ideal for batch operations.

curl -H 'Accept: application/n-triples' 'https://scigraph.springernature.com/pub.10.1134/s1063782614010199'

Turtle is a human-readable linked data format.

curl -H 'Accept: text/turtle' 'https://scigraph.springernature.com/pub.10.1134/s1063782614010199'

RDF/XML is a standard XML format for linked data.

curl -H 'Accept: application/rdf+xml' 'https://scigraph.springernature.com/pub.10.1134/s1063782614010199'


 

This table displays all metadata directly associated to this object as RDF triples.

167 TRIPLES      22 PREDICATES      59 URIs      47 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782614010199 schema:about anzsrc-for:02
2 anzsrc-for:0204
3 anzsrc-for:0206
4 schema:author N84cbf7eb0177472ba6697aedc7a879f2
5 schema:citation sg:pub.10.1134/s1063782610010161
6 sg:pub.10.1134/s1063782610010215
7 sg:pub.10.1134/s1063782611030079
8 schema:datePublished 2014-01-05
9 schema:datePublishedReg 2014-01-05
10 schema:description III-N blue LED structures with active regions based on InGaN nanoislands are studied. The structures are grown by metalorganic vapor-phase epitaxy (MOVPE) on GaN layers deposited by various methods for the initial formation of an epitaxial layer. It is shown that, due to strong carrier localization in narrow-gap InGaN nanoislands, the electroluminescence efficiency is independent of the crystal perfection of the material.
11 schema:genre article
12 schema:inLanguage en
13 schema:isAccessibleForFree false
14 schema:isPartOf N72038a07a2c642e3b2fecb4ed39ffec5
15 N7693d3d6c9034fbaa1e4fee79552a1ac
16 sg:journal.1136692
17 schema:keywords GaN epitaxial buffer layers
18 GaN layers
19 InGaN nanoislands
20 LEDs
21 active region
22 blue LED
23 buffer layer
24 carrier localization
25 crystal perfection
26 dependence
27 efficiency
28 electroluminescence efficiency
29 epitaxial buffer layers
30 epitaxial layers
31 epitaxy
32 formation
33 initial formation
34 layer
35 localization
36 materials
37 metalorganic vapor-phase epitaxy
38 method
39 nanoislands
40 narrow-gap InGaN nanoislands
41 perfection
42 region
43 strong carrier localization
44 structural perfection
45 structure
46 vapor-phase epitaxy
47 schema:name Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers
48 schema:pagination 53-57
49 schema:productId Ne87e2b775c47495eafe75d146935bf93
50 Nf5aeb35af2634c889eb51d1a4274e005
51 schema:sameAs https://app.dimensions.ai/details/publication/pub.1015570546
52 https://doi.org/10.1134/s1063782614010199
53 schema:sdDatePublished 2021-12-01T19:31
54 schema:sdLicense https://scigraph.springernature.com/explorer/license/
55 schema:sdPublisher Nb321e369c48d4a5ab0ba2f074c8b9722
56 schema:url https://doi.org/10.1134/s1063782614010199
57 sgo:license sg:explorer/license/
58 sgo:sdDataset articles
59 rdf:type schema:ScholarlyArticle
60 N09f735e8d0524c1ca75607fec6159e93 rdf:first sg:person.016026355533.82
61 rdf:rest Na2c129dd96f141059ec8f554de6ef93e
62 N1608834f1d2f4af8a1ae24067dcdda3f rdf:first sg:person.011771360023.05
63 rdf:rest N09f735e8d0524c1ca75607fec6159e93
64 N2cef514becc14f43a8023ebe27721d3b rdf:first sg:person.015475065541.13
65 rdf:rest rdf:nil
66 N72038a07a2c642e3b2fecb4ed39ffec5 schema:issueNumber 1
67 rdf:type schema:PublicationIssue
68 N7693d3d6c9034fbaa1e4fee79552a1ac schema:volumeNumber 48
69 rdf:type schema:PublicationVolume
70 N84cbf7eb0177472ba6697aedc7a879f2 rdf:first sg:person.013543521751.29
71 rdf:rest Nffe0f41fd8814b74b8b7ba102c43171d
72 Na14dd6255fed4643806649ca65171a16 rdf:first sg:person.011162335741.78
73 rdf:rest Ncd8878cca6cb40568ae828e8d42f87e2
74 Na2c129dd96f141059ec8f554de6ef93e rdf:first sg:person.01236734145.04
75 rdf:rest N2cef514becc14f43a8023ebe27721d3b
76 Nb321e369c48d4a5ab0ba2f074c8b9722 schema:name Springer Nature - SN SciGraph project
77 rdf:type schema:Organization
78 Nba59b0e4823f4e7aac6f51cd884f7ea3 rdf:first sg:person.010201114167.20
79 rdf:rest Na14dd6255fed4643806649ca65171a16
80 Ncd8878cca6cb40568ae828e8d42f87e2 rdf:first sg:person.015451372144.61
81 rdf:rest N1608834f1d2f4af8a1ae24067dcdda3f
82 Ne87e2b775c47495eafe75d146935bf93 schema:name dimensions_id
83 schema:value pub.1015570546
84 rdf:type schema:PropertyValue
85 Nf5aeb35af2634c889eb51d1a4274e005 schema:name doi
86 schema:value 10.1134/s1063782614010199
87 rdf:type schema:PropertyValue
88 Nffe0f41fd8814b74b8b7ba102c43171d rdf:first sg:person.010050311505.33
89 rdf:rest Nba59b0e4823f4e7aac6f51cd884f7ea3
90 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
91 schema:name Physical Sciences
92 rdf:type schema:DefinedTerm
93 anzsrc-for:0204 schema:inDefinedTermSet anzsrc-for:
94 schema:name Condensed Matter Physics
95 rdf:type schema:DefinedTerm
96 anzsrc-for:0206 schema:inDefinedTermSet anzsrc-for:
97 schema:name Quantum Physics
98 rdf:type schema:DefinedTerm
99 sg:journal.1136692 schema:issn 1063-7826
100 1090-6479
101 schema:name Semiconductors
102 schema:publisher Pleiades Publishing
103 rdf:type schema:Periodical
104 sg:person.010050311505.33 schema:affiliation grid-institutes:grid.4886.2
105 schema:familyName Nikolaev
106 schema:givenName A. E.
107 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010050311505.33
108 rdf:type schema:Person
109 sg:person.010201114167.20 schema:affiliation grid-institutes:grid.4886.2
110 schema:familyName Sakharov
111 schema:givenName A. V.
112 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010201114167.20
113 rdf:type schema:Person
114 sg:person.011162335741.78 schema:affiliation grid-institutes:grid.4886.2
115 schema:familyName Usov
116 schema:givenName S. O.
117 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011162335741.78
118 rdf:type schema:Person
119 sg:person.011771360023.05 schema:affiliation grid-institutes:grid.423485.c
120 schema:familyName Brunkov
121 schema:givenName P. N.
122 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011771360023.05
123 rdf:type schema:Person
124 sg:person.01236734145.04 schema:affiliation grid-institutes:None
125 schema:familyName Cherkashin
126 schema:givenName N. A.
127 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01236734145.04
128 rdf:type schema:Person
129 sg:person.013543521751.29 schema:affiliation grid-institutes:grid.4886.2
130 schema:familyName Lundin
131 schema:givenName W. V.
132 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013543521751.29
133 rdf:type schema:Person
134 sg:person.015451372144.61 schema:affiliation grid-institutes:grid.4886.2
135 schema:familyName Zavarin
136 schema:givenName E. E.
137 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015451372144.61
138 rdf:type schema:Person
139 sg:person.015475065541.13 schema:affiliation grid-institutes:grid.4886.2
140 schema:familyName Tsatsulnikov
141 schema:givenName A. F.
142 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.015475065541.13
143 rdf:type schema:Person
144 sg:person.016026355533.82 schema:affiliation grid-institutes:grid.423485.c
145 schema:familyName Yagovkina
146 schema:givenName M. A.
147 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.016026355533.82
148 rdf:type schema:Person
149 sg:pub.10.1134/s1063782610010161 schema:sameAs https://app.dimensions.ai/details/publication/pub.1023819198
150 https://doi.org/10.1134/s1063782610010161
151 rdf:type schema:CreativeWork
152 sg:pub.10.1134/s1063782610010215 schema:sameAs https://app.dimensions.ai/details/publication/pub.1032803191
153 https://doi.org/10.1134/s1063782610010215
154 rdf:type schema:CreativeWork
155 sg:pub.10.1134/s1063782611030079 schema:sameAs https://app.dimensions.ai/details/publication/pub.1038043217
156 https://doi.org/10.1134/s1063782611030079
157 rdf:type schema:CreativeWork
158 grid-institutes:None schema:alternateName Center for Material Elaboration and Structural Studies (CEMES) of the National Center for Scientific Research (CNRS), 31055, Toulouse, France
159 schema:name Center for Material Elaboration and Structural Studies (CEMES) of the National Center for Scientific Research (CNRS), 31055, Toulouse, France
160 rdf:type schema:Organization
161 grid-institutes:grid.423485.c schema:alternateName Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
162 schema:name Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
163 rdf:type schema:Organization
164 grid-institutes:grid.4886.2 schema:alternateName Scientific and Technological Center for Microelectronics and Submicron Heterostructures, Russian Academy of Sciences, 194012, St. Petersburg, Russia
165 schema:name Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
166 Scientific and Technological Center for Microelectronics and Submicron Heterostructures, Russian Academy of Sciences, 194012, St. Petersburg, Russia
167 rdf:type schema:Organization
 




Preview window. Press ESC to close (or click here)


...