Transport parameters and optical properties of selectively doped Ga(Al)As/Zn(Mn)Se heterovalent structures with a two-dimensional hole channel View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2014-01-05

AUTHORS

E. A. Evropeytsev, G. V. Klimko, T. A. Komissarova, I. V. Sedova, S. V. Sorokin, S. V. Gronin, D. Yu. Kazantsev, B. Ya. Ber, S. V. Ivanov, A. A. Toropov

ABSTRACT

The growth of III–V/II–VI:Mn heterostructures with a high hole concentration in the AlGaAs:Be/GaAs/AlGaAs 2D channel situated in the immediate vicinity of the AlGaAs/Zn(Mn)Se heterovalent interface by molecular-beam epitaxy is reported. Despite the decrease in the hole concentration in the GaAs channel upon a decrease in the distance between the channel and the heterovalent interface, the hole concentration reaches a value of 1.5 × 1013 cm−2 at a temperature of 300 K even at the minimum distance of 1.2 nm. Deep profiling by dynamic secondary-ion mass spectrometry confirmed the back diffusion of Mn from ZnMnSe into the III–V part. High hole concentration and the presence of magnetic manganese ions in the GaAs conduction channel determine the interest in the structures as possible objects in which the effect of magnetic ordering in heterogeneous semiconductor systems can be studied. More... »

PAGES

30-33

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782614010126

DOI

http://dx.doi.org/10.1134/s1063782614010126

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1020730078


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[
  {
    "@context": "https://springernature.github.io/scigraph/jsonld/sgcontext.json", 
    "about": [
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/02", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Physical Sciences", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0204", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Condensed Matter Physics", 
        "type": "DefinedTerm"
      }, 
      {
        "id": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/0206", 
        "inDefinedTermSet": "http://purl.org/au-research/vocabulary/anzsrc-for/2008/", 
        "name": "Quantum Physics", 
        "type": "DefinedTerm"
      }
    ], 
    "author": [
      {
        "affiliation": {
          "alternateName": "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Evropeytsev", 
        "givenName": "E. A.", 
        "id": "sg:person.013203266151.03", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013203266151.03"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Klimko", 
        "givenName": "G. V.", 
        "id": "sg:person.013335174157.15", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013335174157.15"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Komissarova", 
        "givenName": "T. A.", 
        "id": "sg:person.014336551721.47", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014336551721.47"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Sedova", 
        "givenName": "I. V.", 
        "id": "sg:person.014533010336.56", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014533010336.56"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Sorokin", 
        "givenName": "S. V.", 
        "id": "sg:person.012454020751.10", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012454020751.10"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Gronin", 
        "givenName": "S. V.", 
        "id": "sg:person.011121504665.45", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011121504665.45"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Kazantsev", 
        "givenName": "D. Yu.", 
        "id": "sg:person.014463273123.71", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014463273123.71"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Ber", 
        "givenName": "B. Ya.", 
        "id": "sg:person.013474671571.59", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013474671571.59"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Ivanov", 
        "givenName": "S. V.", 
        "id": "sg:person.01064304443.31", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01064304443.31"
        ], 
        "type": "Person"
      }, 
      {
        "affiliation": {
          "alternateName": "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia", 
          "id": "http://www.grid.ac/institutes/grid.423485.c", 
          "name": [
            "Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia"
          ], 
          "type": "Organization"
        }, 
        "familyName": "Toropov", 
        "givenName": "A. A.", 
        "id": "sg:person.010472630272.42", 
        "sameAs": [
          "https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010472630272.42"
        ], 
        "type": "Person"
      }
    ], 
    "datePublished": "2014-01-05", 
    "datePublishedReg": "2014-01-05", 
    "description": "The growth of III\u2013V/II\u2013VI:Mn heterostructures with a high hole concentration in the AlGaAs:Be/GaAs/AlGaAs 2D channel situated in the immediate vicinity of the AlGaAs/Zn(Mn)Se heterovalent interface by molecular-beam epitaxy is reported. Despite the decrease in the hole concentration in the GaAs channel upon a decrease in the distance between the channel and the heterovalent interface, the hole concentration reaches a value of 1.5 \u00d7 1013 cm\u22122 at a temperature of 300 K even at the minimum distance of 1.2 nm. Deep profiling by dynamic secondary-ion mass spectrometry confirmed the back diffusion of Mn from ZnMnSe into the III\u2013V part. High hole concentration and the presence of magnetic manganese ions in the GaAs conduction channel determine the interest in the structures as possible objects in which the effect of magnetic ordering in heterogeneous semiconductor systems can be studied.", 
    "genre": "article", 
    "id": "sg:pub.10.1134/s1063782614010126", 
    "inLanguage": "en", 
    "isAccessibleForFree": false, 
    "isPartOf": [
      {
        "id": "sg:journal.1136692", 
        "issn": [
          "1063-7826", 
          "1090-6479"
        ], 
        "name": "Semiconductors", 
        "publisher": "Pleiades Publishing", 
        "type": "Periodical"
      }, 
      {
        "issueNumber": "1", 
        "type": "PublicationIssue"
      }, 
      {
        "type": "PublicationVolume", 
        "volumeNumber": "48"
      }
    ], 
    "keywords": [
      "heterovalent interfaces", 
      "high hole concentration", 
      "two-dimensional hole channel", 
      "molecular-beam epitaxy", 
      "hole concentration", 
      "secondary-ion mass spectrometry", 
      "dynamic secondary-ion mass spectrometry", 
      "semiconductor systems", 
      "hole channel", 
      "AlGaAs/", 
      "GaAs channel", 
      "optical properties", 
      "conduction channels", 
      "heterovalent structures", 
      "magnetic ordering", 
      "manganese ions", 
      "ZnMnSe", 
      "transport parameters", 
      "AlGaAs", 
      "heterostructures", 
      "epitaxy", 
      "ions", 
      "immediate vicinity", 
      "channels", 
      "distance", 
      "structure", 
      "interface", 
      "mass spectrometry", 
      "vicinity", 
      "ordering", 
      "diffusion", 
      "temperature", 
      "properties", 
      "objects", 
      "spectrometry", 
      "back diffusion", 
      "Mn", 
      "parameters", 
      "system", 
      "effect", 
      "values", 
      "decrease", 
      "presence", 
      "minimum distance", 
      "interest", 
      "concentration", 
      "growth", 
      "profiling", 
      "part", 
      "deep profiling", 
      "possible objects", 
      "GaAs/AlGaAs 2D channel", 
      "AlGaAs 2D channel", 
      "magnetic manganese ions", 
      "GaAs conduction channel", 
      "heterogeneous semiconductor systems"
    ], 
    "name": "Transport parameters and optical properties of selectively doped Ga(Al)As/Zn(Mn)Se heterovalent structures with a two-dimensional hole channel", 
    "pagination": "30-33", 
    "productId": [
      {
        "name": "dimensions_id", 
        "type": "PropertyValue", 
        "value": [
          "pub.1020730078"
        ]
      }, 
      {
        "name": "doi", 
        "type": "PropertyValue", 
        "value": [
          "10.1134/s1063782614010126"
        ]
      }
    ], 
    "sameAs": [
      "https://doi.org/10.1134/s1063782614010126", 
      "https://app.dimensions.ai/details/publication/pub.1020730078"
    ], 
    "sdDataset": "articles", 
    "sdDatePublished": "2021-12-01T19:32", 
    "sdLicense": "https://scigraph.springernature.com/explorer/license/", 
    "sdPublisher": {
      "name": "Springer Nature - SN SciGraph project", 
      "type": "Organization"
    }, 
    "sdSource": "s3://com-springernature-scigraph/baseset/20211201/entities/gbq_results/article/article_646.jsonl", 
    "type": "ScholarlyArticle", 
    "url": "https://doi.org/10.1134/s1063782614010126"
  }
]
 

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This table displays all metadata directly associated to this object as RDF triples.

181 TRIPLES      21 PREDICATES      82 URIs      73 LITERALS      6 BLANK NODES

Subject Predicate Object
1 sg:pub.10.1134/s1063782614010126 schema:about anzsrc-for:02
2 anzsrc-for:0204
3 anzsrc-for:0206
4 schema:author Nf04a077e68fd48caadbc9a92eb5b519b
5 schema:datePublished 2014-01-05
6 schema:datePublishedReg 2014-01-05
7 schema:description The growth of III–V/II–VI:Mn heterostructures with a high hole concentration in the AlGaAs:Be/GaAs/AlGaAs 2D channel situated in the immediate vicinity of the AlGaAs/Zn(Mn)Se heterovalent interface by molecular-beam epitaxy is reported. Despite the decrease in the hole concentration in the GaAs channel upon a decrease in the distance between the channel and the heterovalent interface, the hole concentration reaches a value of 1.5 × 1013 cm−2 at a temperature of 300 K even at the minimum distance of 1.2 nm. Deep profiling by dynamic secondary-ion mass spectrometry confirmed the back diffusion of Mn from ZnMnSe into the III–V part. High hole concentration and the presence of magnetic manganese ions in the GaAs conduction channel determine the interest in the structures as possible objects in which the effect of magnetic ordering in heterogeneous semiconductor systems can be studied.
8 schema:genre article
9 schema:inLanguage en
10 schema:isAccessibleForFree false
11 schema:isPartOf Naaf447bc65fe4963bd0e830926ea9c24
12 Nd7cad857dfab406c9fad810cae452fde
13 sg:journal.1136692
14 schema:keywords AlGaAs
15 AlGaAs 2D channel
16 AlGaAs/
17 GaAs channel
18 GaAs conduction channel
19 GaAs/AlGaAs 2D channel
20 Mn
21 ZnMnSe
22 back diffusion
23 channels
24 concentration
25 conduction channels
26 decrease
27 deep profiling
28 diffusion
29 distance
30 dynamic secondary-ion mass spectrometry
31 effect
32 epitaxy
33 growth
34 heterogeneous semiconductor systems
35 heterostructures
36 heterovalent interfaces
37 heterovalent structures
38 high hole concentration
39 hole channel
40 hole concentration
41 immediate vicinity
42 interest
43 interface
44 ions
45 magnetic manganese ions
46 magnetic ordering
47 manganese ions
48 mass spectrometry
49 minimum distance
50 molecular-beam epitaxy
51 objects
52 optical properties
53 ordering
54 parameters
55 part
56 possible objects
57 presence
58 profiling
59 properties
60 secondary-ion mass spectrometry
61 semiconductor systems
62 spectrometry
63 structure
64 system
65 temperature
66 transport parameters
67 two-dimensional hole channel
68 values
69 vicinity
70 schema:name Transport parameters and optical properties of selectively doped Ga(Al)As/Zn(Mn)Se heterovalent structures with a two-dimensional hole channel
71 schema:pagination 30-33
72 schema:productId N33bee5ea44c14924ad445ff9f78f72f4
73 N4a34ec5acc7f4c59bec1f95e0dd73c8c
74 schema:sameAs https://app.dimensions.ai/details/publication/pub.1020730078
75 https://doi.org/10.1134/s1063782614010126
76 schema:sdDatePublished 2021-12-01T19:32
77 schema:sdLicense https://scigraph.springernature.com/explorer/license/
78 schema:sdPublisher Ne55b7da64a37449fb9967415ffb0b8dc
79 schema:url https://doi.org/10.1134/s1063782614010126
80 sgo:license sg:explorer/license/
81 sgo:sdDataset articles
82 rdf:type schema:ScholarlyArticle
83 N0f6ea30b5f104280af3fb495be45f6c1 rdf:first sg:person.012454020751.10
84 rdf:rest N54234d8c9b8c45768b7ae4dc90ae2d79
85 N2d9032a5888b4b10a39cf22e2d7382a8 rdf:first sg:person.013474671571.59
86 rdf:rest Nf0e34b64e2af4bc48838b8eafaf5961d
87 N33bee5ea44c14924ad445ff9f78f72f4 schema:name dimensions_id
88 schema:value pub.1020730078
89 rdf:type schema:PropertyValue
90 N47bed1f053c94fb0aabe6facfecb1b2e rdf:first sg:person.014533010336.56
91 rdf:rest N0f6ea30b5f104280af3fb495be45f6c1
92 N4a34ec5acc7f4c59bec1f95e0dd73c8c schema:name doi
93 schema:value 10.1134/s1063782614010126
94 rdf:type schema:PropertyValue
95 N54234d8c9b8c45768b7ae4dc90ae2d79 rdf:first sg:person.011121504665.45
96 rdf:rest Na52dee2e925d47d29ecf39695b518cc0
97 N55bc73aa2b5246f8aeab579b097fe06a rdf:first sg:person.014336551721.47
98 rdf:rest N47bed1f053c94fb0aabe6facfecb1b2e
99 N9fe4193426e94a2eb2e8e12b8c55e9cd rdf:first sg:person.010472630272.42
100 rdf:rest rdf:nil
101 Na29b4cc9b54e41019102cf4c4b8a5feb rdf:first sg:person.013335174157.15
102 rdf:rest N55bc73aa2b5246f8aeab579b097fe06a
103 Na52dee2e925d47d29ecf39695b518cc0 rdf:first sg:person.014463273123.71
104 rdf:rest N2d9032a5888b4b10a39cf22e2d7382a8
105 Naaf447bc65fe4963bd0e830926ea9c24 schema:volumeNumber 48
106 rdf:type schema:PublicationVolume
107 Nd7cad857dfab406c9fad810cae452fde schema:issueNumber 1
108 rdf:type schema:PublicationIssue
109 Ne55b7da64a37449fb9967415ffb0b8dc schema:name Springer Nature - SN SciGraph project
110 rdf:type schema:Organization
111 Nf04a077e68fd48caadbc9a92eb5b519b rdf:first sg:person.013203266151.03
112 rdf:rest Na29b4cc9b54e41019102cf4c4b8a5feb
113 Nf0e34b64e2af4bc48838b8eafaf5961d rdf:first sg:person.01064304443.31
114 rdf:rest N9fe4193426e94a2eb2e8e12b8c55e9cd
115 anzsrc-for:02 schema:inDefinedTermSet anzsrc-for:
116 schema:name Physical Sciences
117 rdf:type schema:DefinedTerm
118 anzsrc-for:0204 schema:inDefinedTermSet anzsrc-for:
119 schema:name Condensed Matter Physics
120 rdf:type schema:DefinedTerm
121 anzsrc-for:0206 schema:inDefinedTermSet anzsrc-for:
122 schema:name Quantum Physics
123 rdf:type schema:DefinedTerm
124 sg:journal.1136692 schema:issn 1063-7826
125 1090-6479
126 schema:name Semiconductors
127 schema:publisher Pleiades Publishing
128 rdf:type schema:Periodical
129 sg:person.010472630272.42 schema:affiliation grid-institutes:grid.423485.c
130 schema:familyName Toropov
131 schema:givenName A. A.
132 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.010472630272.42
133 rdf:type schema:Person
134 sg:person.01064304443.31 schema:affiliation grid-institutes:grid.423485.c
135 schema:familyName Ivanov
136 schema:givenName S. V.
137 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.01064304443.31
138 rdf:type schema:Person
139 sg:person.011121504665.45 schema:affiliation grid-institutes:grid.423485.c
140 schema:familyName Gronin
141 schema:givenName S. V.
142 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.011121504665.45
143 rdf:type schema:Person
144 sg:person.012454020751.10 schema:affiliation grid-institutes:grid.423485.c
145 schema:familyName Sorokin
146 schema:givenName S. V.
147 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.012454020751.10
148 rdf:type schema:Person
149 sg:person.013203266151.03 schema:affiliation grid-institutes:grid.423485.c
150 schema:familyName Evropeytsev
151 schema:givenName E. A.
152 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013203266151.03
153 rdf:type schema:Person
154 sg:person.013335174157.15 schema:affiliation grid-institutes:grid.423485.c
155 schema:familyName Klimko
156 schema:givenName G. V.
157 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013335174157.15
158 rdf:type schema:Person
159 sg:person.013474671571.59 schema:affiliation grid-institutes:grid.423485.c
160 schema:familyName Ber
161 schema:givenName B. Ya.
162 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.013474671571.59
163 rdf:type schema:Person
164 sg:person.014336551721.47 schema:affiliation grid-institutes:grid.423485.c
165 schema:familyName Komissarova
166 schema:givenName T. A.
167 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014336551721.47
168 rdf:type schema:Person
169 sg:person.014463273123.71 schema:affiliation grid-institutes:grid.423485.c
170 schema:familyName Kazantsev
171 schema:givenName D. Yu.
172 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014463273123.71
173 rdf:type schema:Person
174 sg:person.014533010336.56 schema:affiliation grid-institutes:grid.423485.c
175 schema:familyName Sedova
176 schema:givenName I. V.
177 schema:sameAs https://app.dimensions.ai/discover/publication?and_facet_researcher=ur.014533010336.56
178 rdf:type schema:Person
179 grid-institutes:grid.423485.c schema:alternateName Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
180 schema:name Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
181 rdf:type schema:Organization
 




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