Pseudomorphic GeSn/Ge (001) heterostructures View Full Text


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Article Info

DATE

2013-11-06

AUTHORS

A. A. Tonkikh, V. G. Talalaev, P. Werner

ABSTRACT

The synthesis of pseudomorphic GeSn heterostructures on a Ge (001) substrate by molecular-beam epitaxy is described. Investigations by transmission electron microscopy show that the GeSn layers are defect free and possess cubic diamondlike structure. Photoluminescence spectroscopy reveals interband radiative recombination in the GeSn quantum wells, which is identified as indirect transitions between the subbands of heavy electrons and heavy holes. On the basis of experimental data and modeling of the band structure of pseudomorphic GeSn compounds, the lower boundary of the bowing parameter for the indirect band gap is estimated as bL ≥ 1.47 eV. More... »

PAGES

1452-1455

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782613110225

DOI

http://dx.doi.org/10.1134/s1063782613110225

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1039609360


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