Investigation of the transition layer in 3C-SiC/6H-SiC heterostructures View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2013-11-06

AUTHORS

A. A. Lebedev, M. V. Zamorianskaya, S. Yu. Davydov, D. A. Kirilenko, S. P. Lebedev, L. M. Sorokin, D. B. Shustov, M. P. Scheglov

ABSTRACT

Transmission electron microscopy and the cathodoluminescence method are used to study the transition region in 3C-SiC/6H-SiC heterostructures. It is shown that this region is, as a rule, constituted by alternating 3C-SiC and 6H-SiC layers with the possible inclusion of other silicon carbide polytypes. An assumption is made that this structure of the transition region can be explained in terms of the model of spinodal decomposition. More... »

PAGES

1539-1543

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782613110134

DOI

http://dx.doi.org/10.1134/s1063782613110134

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1017038771


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