Comparative study of 3C-SiC layers sublimation-grown on a 6H-SiC substrate View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2013-09

AUTHORS

D. B. Shustov, A. A. Lebedev, S. P. Lebedev, D. K. Nelson, A. A. Sitnikova, M. V. Zamoryanskaya

ABSTRACT

n-3C-SiC/n-6H-SiC heterostructures grown by vacuum sublimation on CREE commercial 6H-SiC substrates are studied. Transmission electron microscopy (TEM) demonstrated that a transitional layer of varying thickness, composed of a mixture of 3C- and 6H-SiC polytypes, is formed on the substrate. A 3C polytype layer was obtained on the interlayer. Cathodoluminescence study of the surface of the film demonstrated that defects in the form of inclusions of another phase (6H-polytype), stacking faults, and twin boundaries (separating domains of cubic modification, grown in various orientations) are found on the surface and in the surface layer with a thickness on the order of 100 μm. Varying the growth conditions changes the concentration of various types of defects. More... »

PAGES

1267-1270

References to SciGraph publications

Journal

TITLE

Semiconductors

ISSUE

9

VOLUME

47

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782613090236

DOI

http://dx.doi.org/10.1134/s1063782613090236

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1035936400


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