Effect of annealing on the nonequilibrium carrier lifetime in GaAs grown at low temperatures View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2013-08

AUTHORS

A. A. Pastor, U. V. Prokhorova, P. Yu. Serdobintsev, V. V. Chaldyshev, M. A. Yagovkina

ABSTRACT

GaAs samples grown by molecular-beam epitaxy at low (230°C) temperatures are investigated. One of the samples is subjected to aftergrowth annealing at 600°C. Using an unconventional pump-probe scheme for measuring the dynamic variation in the light refractive index, the nonequilibrium charge-carrier lifetime (275 ± 30 fs before annealing) is determined. Such a short carrier lifetime in the unannealed material is due to the high concentration of point defects, mainly AsGa antisite defects. According to X-ray diffraction and steady-state optical absorption data, the AsGa concentration in the samples is 3 × 1019 cm−3, which corresponds to an arsenic excess of 0.26 at %. Upon annealing at 600°C, the superstoichiometric As defects self-organize and form As nanoinclusions in the GaAs crystal matrix. It is shown that in this case the nonequilibrium charge-carrier lifetime increases to 452 ± 5 fs. This lifetime is apparently ensured by the capture of non-equilibrium charge carriers at metal As nanoinclusions. More... »

PAGES

1137-1140

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782613080150

DOI

http://dx.doi.org/10.1134/s1063782613080150

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1011041588


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