Effect of annealing in argon on the properties of thermally deposited gallium-oxide films View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2013-08-07

AUTHORS

V. M. Kalygina, V. V. Vishnikina, A. N. Zarubin, V. A. Novikov, Yu. S. Petrova, O. P. Tolbanov, A. V. Tyazhev, S. Y. Tcupiy, T. M. Yaskevich

ABSTRACT

The effect of the annealing temperature on the I–V, C–I, and G–V characteristics and transparency of gallium-oxide films is investigated. The films are fabricated by the thermal evaporation of Ga2O3 powder on n-GaAs wafers. It is shown that the films which are amorphous after deposition crystallize upon annealing at temperatures Tan ≥ 800°C. The electrical characteristics and photoresponse of the V/Ni-GaAs-GaAs-GaxOy-V/Ni samples to visible radiation depend on the structure and phase composition of the films. More... »

PAGES

1130-1136

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782613080071

DOI

http://dx.doi.org/10.1134/s1063782613080071

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1020280150


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