Single-spatial-mode semiconductor VCSELs with a nonplanar upper dielectric DBR View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2013-07-06

AUTHORS

N. A. Maleev, A. G. Kuz’menkov, M. M. Kulagina, Yu. M. Zadiranov, A. P. Vasil’ev, S. A. Blokhin, A. S. Shulenkov, S. I. Troshkov, A. G. Gladyshev, A. M. Nadtochiy, M. M. Pavlov, M. A. Bobrov, D. E. Nazaruk, V. M. Ustinov

ABSTRACT

Single-spatial-mode semiconductor vertical-cavity surface-emitting lasers (VCSELs) with a non-planar upper (output) dielectric distributed Bragg reflector (DBR) for the 850 nm spectral region are fabricated. The suggested design provides stable single-mode generation in the entire range of working currents, limited by overheating of the active region. Devices with intracavity contacts and a comparatively large current-aperture diameter (5–6 μm) exhibit single-mode lasing at a wavelength of 840–845 nm in the continuous-wave mode at room temperature with threshold currents of 1.2–1.3 mA, a differential efficiency of 0.5–0.55 mW mA−1, and anoutput power of up to 2 mW. More... »

PAGES

993-996

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782613070166

DOI

http://dx.doi.org/10.1134/s1063782613070166

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1044532107


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