Photovoltaic properties of GaAs:Be nanowire arrays View Full Text


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Article Info

DATE

2013-06-10

AUTHORS

A. D. Bouravleuv, D. V. Beznasyuk, E. P. Gilstein, M. Tchernycheva, A. De Luna Bugallo, L. Rigutti, L. Yu, Yu. Proskuryakov, I. V. Shtrom, M. A. Timofeeva, Yu. B. Samsonenko, A. I. Khrebtov, G. Cirlin

ABSTRACT

Arrays of GaAs:Be nanowires are synthesized by molecular beam epitaxy on GaAs(111)B substrates. Prototypes of photovoltaic converters in which the grown nanowire arrays are used as active layers are produced by means of successive photolithography, etching, and metallization processes. Studying the photovoltaic properties of the fabricated structures using a solar radiation simulator demonstrates that the solarenergy conversion efficiency is about 0.1%. The value of the efficiency recalculated with the area occupied by the p-type nanowires on the surface of the n-type GaAs substrate taken into account amounts to 1.1%. More... »

PAGES

808-811

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782613060079

DOI

http://dx.doi.org/10.1134/s1063782613060079

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1004045005


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