Gallium-oxide films obtained by thermal evaporation View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2013-05-09

AUTHORS

V. M. Kalygina, A. N. Zarubin, V. A. Novikov, Yu. S. Petrova, O. P. Tolbanov, A. V. Tyazhev, S. Yu. Tsupiy, T. M. Yaskevich

ABSTRACT

The current-voltage (I–V), capacitance-voltage (C–V), and conductance-voltage (G–V) characteristics of metal/GaxOy/GaAs/metal structures are investigated. Gallium-oxide films with a thickness of 150–170 nm are deposited by the thermal evaporation of Ga2O3 powder onto n-type GaAs substrates with the donor concentration Nd = 2 × 1016 cm−3. Treatment of the GaxOy films in oxygen plasma causes a decrease in both the forward and reverse currents and a shift of the C–V and G–V curves to higher positive voltages. The Fermi level at the insulator/semiconductor interface in the structures under study is unpinned. The density of states at the GaxOy/GaAs interface is Nt = (2–6) × 1012 eV−1 cm−2. More... »

PAGES

612-618

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782613050126

DOI

http://dx.doi.org/10.1134/s1063782613050126

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1021655963


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