Study of the light-induced degradation of tandem α-Si:H/μc-Si:H photovoltaic converters View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2013-05-09

AUTHORS

V. M. Emelyanov, A. S. Abramov, A. V. Bobyl, A. S. Gudovskikh, D. L. Orekhov, E. I. Terukov, N. Kh. Timoshina, O. I. Chosta, M. Z. Shvarts

ABSTRACT

The photo-induced degradation of tandem α-Si:H/μc-Si:H photovoltaic converters with an initial efficiency of 10.4% under light flux densities of 1 and 10 kW m−2 (AM1.5G) is studied. It is shown that the stabilized state is reached after 500 h of exposure to the standard light-flux density and after 300 min at a flux 10 times higher in density. In both cases, the efficiency decreases by 1.2–1.4 abs. %. The experimentally measured spectral and current-voltage characteristics of the photovoltaic converters are used to determine the nonequilibrium carrier lifetimes and to calculate variation dependences of the dangling-bond concentration in i-α-Si:H and i-μc-Si:H layers. The dependences are approximated in terms of the floating-bond model. The calculated dangling-bond concentrations after various exposure times are used to simulate the dependences of the photovoltaic-converter parameters on light exposure. The results obtained show good coincidence between the simulated degradation rates of the current and efficiency of a tandem photovoltaic cell and the experimental data. More... »

PAGES

679-685

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782613050102

DOI

http://dx.doi.org/10.1134/s1063782613050102

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1048382040


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