Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells View Full Text


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Article Info

DATE

2013-05-09

AUTHORS

V. Ya. Aleshkin, A. A. Dubinov, M. N. Drozdov, B. N. Zvonkov, K. E. Kudryavtsev, A. A. Tonkikh, A. N. Yablonskiy, P. Werner

ABSTRACT

GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is observed in the wavelength range from 1300 to 1650 nm. The line corresponds to indirect transitions in the momentum space of the Ge quantum wells and to transitions between the In0.28Ga0.72As and Ge layers, indirect in coordinate space, but direct in momentum space. More... »

PAGES

636-640

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782613050047

DOI

http://dx.doi.org/10.1134/s1063782613050047

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1036801310


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