Picosecond internal Q-switching mode correlates with laser diode breakdown voltage View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2013-03-08

AUTHORS

B. Lanz, S. N. Vainshtein, V. M. Lantratov, N. A. Kalyuzhnyy, S. A. Mintairov, J. T. Kostamovaara

ABSTRACT

The record picosecond power density recently achieved with a current-pumped laser diode turned our attention to a still unexplained 50-year-old phenomenon termed “internal Q-switching”. The correlation found experimentally here between the relatively high breakdown voltage (∼5–11 V) in a heavily doped single-heterostructure laser diode and its high-power picosecond lasing provides a means for solving the puzzle. Together with the experimental fact that picosecond lasing occurs from the p-n junction, this implies that internal Q-switching is determined by the compensated layer rather than by “traditional” single-heterostructure waveguide. This finding is valid for various growth technologies independently of whether the high break-down voltage and picosecond lasing are achieved by exact compensation of shallow donors by shallow acceptors, or by doping profile gradients. More... »

PAGES

406-408

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782613030159

DOI

http://dx.doi.org/10.1134/s1063782613030159

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1037009170


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