Photoresponse recovery in silicon photodiodes upon VUV irradiation View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2013-02-19

AUTHORS

V. V. Zabrodskiy, P. N. Aruev, V. P. Belik, B. Ya. Ber, D. Yu. Kazantsev, M. V. Drozdova, N. V. Zabrodskaya, M. S. Lazeeva, A. D. Nikolenko, V. L. Sukhanov, V. V. Filimonov, E. V. Sherstnev

ABSTRACT

The spatial homogeneity of the photoresponse is studied for silicon photodiodes based on p-n and n-p junctions a year after their irradiation at a wavelength of 121.6 nm and those based on n-p junctions four years after their irradiation with soft X-rays. It is demonstrated that silicon photodiodes based on p-n junctions exhibit a photoresponse recovery effect on being irradiated at a wavelength of 121.6 nm. No recovery effect is observed for silicon photodiodes based on n-p structures. More... »

PAGES

213-216

References to SciGraph publications

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782613020243

DOI

http://dx.doi.org/10.1134/s1063782613020243

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1000171965


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163 rdf:type schema:Organization
 




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