Determination of the thickness and spectral dependence of the refractive index of AlxIn1 − xSb epitaxial layers from reflectance spectra View Full Text


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Article Info

DATE

2013-02-19

AUTHORS

O. S. Komkov, D. D. Firsov, A. N. Semenov, B. Ya. Meltser, S. I. Troshkov, A. N. Pikhtin, S. V. Ivanov

ABSTRACT

A nondestructive method for measuring the thicknesses of epitaxial layers of AlxIn1 − xSb alloys based on interference effects in reflectance spectra measured in a wide wavelength range (1–28 μm) is implemented. The studied 0.9–3.3 μm thick AlxIn1 − xSb layers are grown on highly lattice-mismatched GaAs substrates by molecular beam epitaxy. The found thicknesses are in good agreement with the independent data of scanning electron microscopy. The spectral dependence of the refractive index n(E) of AlxIn1 − xSb layers is measured both for the regions of transparency and fundamental absorption. The refractive index for the case of E < E0 was calculated by a double-oscillator model using a refined experimental dependence of the band gap on the composition E0(x). The experimental data on the n(E) of AlxIn1 − xSb for energies E > E0 are found based on the interference pattern. More... »

PAGES

292-297

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782613020140

DOI

http://dx.doi.org/10.1134/s1063782613020140

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1014610087


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