Electron scattering in AlGaN/GaN heterostructures with a two-dimensional electron gas View Full Text


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Article Info

DATE

2013-01-07

AUTHORS

D. Yu. Protasov, T. V. Malin, A. V. Tikhonov, A. F. Tsatsulnikov, K. S. Zhuravlev

ABSTRACT

The temperature and concentration dependences of electron mobility in AlGaN/GaN hetero-structures are studied. The mobility for the samples under study at T = 300 K lies in the range of 450–1740 cm2/(V s). It is established that scattering at charged centers is dominant for samples with low mobility (lower than 1000 cm2/(V s) right up to room temperature. These centers are associated with a disordered piezoelectric charge at the heterointerface because of its roughness or with a piezoelectric charge similarly to the Al-GaN barrier because of alloy disorder, as well as with the deformation field around dislocations. Scattering at optical phonons is dominant for samples with mobility exceeding 1000 cm2/(V s) at T = 300 K. Scattering at alloy disorders, heterointerface roughness, and dislocations are dominant at temperatures lower than 200 K. A decrease in the influence of scattering at roughness with improvement of the heterointerface morphology increases room-temperature mobility from 1400 cm2/(V s) to 1700 cm2/(V s). More... »

PAGES

33-44

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782613010181

DOI

http://dx.doi.org/10.1134/s1063782613010181

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1044444960


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