Optical anisotropy of InGaAs quantum dots View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2013-01

AUTHORS

S. A. Blokhin, A. M. Nadtochiy, A. A. Krasivichev, L. Ya. Karachinsky, A. P. Vasil’ev, V. N. Nevedomskiy, M. V. Maximov, G. E. Cirlin, A. D. Buravlev, N. A. Maleev, A. E. Zhukov, N. N. Ledentsov, V. M. Ustinov

ABSTRACT

Polarization studies of InGaAs/GaAs quantum dots (QDs) synthesized in the submonolayer deposition mode (SMLQDs) on a singular GaAs (100) surface are carried out using photoluminescence spectroscopy. The influence of the effective In content in InGaAs SMLQDs and the effect of a wide-gap AlGaAs matrix on the optical anisotropy of the QDs are investigated. The highest degree (>15%) of optical anisotropy between the [011] and [01] directions in the emission corresponding to the ground state of InGaAs/GaAs SMLQDs is observed for an effective In content of ∼40%. The use of a wide-gap AlGaAs matrix resulted in an increase in the optical anisotropy of InGaAs SMLQDs by a factor of 1.5. It is found that vertical stacking of In(Ga)As/AlGaAs SMLQDs in the vertical-coupling mode (with spacer-layer thicknesses of 5–10 nm) leads to a further increase in the degree of optical anisotropy, which becomes as high as 25% on average. According to the data of transmission electron microscopy, the optical anisotropy of the ground-state photo-luminescence is predominantly caused by the anisotropy of the lateral dimensions of QDs in the [011] and [01] directions. More... »

PAGES

85-89

References to SciGraph publications

Identifiers

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http://scigraph.springernature.com/pub.10.1134/s1063782613010077

DOI

http://dx.doi.org/10.1134/s1063782613010077

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https://app.dimensions.ai/details/publication/pub.1016591890


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