New system of self-assembled GaSb/GaP quantum dots View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2012-12

AUTHORS

D. S. Abramkin, M. A. Putyato, A. K. Gutakovskii, B. R. Semyagin, V. V. Preobrazhenskii, T. S. Shamirzaev

ABSTRACT

The atomic structure and energy spectrum of self-assembled GaSb/GaP quantum dots are discussed. It is shown that the quantum dots consist mainly of fully relaxed GaSb and have type-I band alignment with the ground electron state at the indirect valley of the GaSb conduction band.

PAGES

1534-1538

References to SciGraph publications

Journal

TITLE

Semiconductors

ISSUE

12

VOLUME

46

Author Affiliations

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782612120020

DOI

http://dx.doi.org/10.1134/s1063782612120020

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1006417040


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