Features of impurity-photoconductivity relaxation in boron-doped silicon View Full Text


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Article Info

DATE

2012-11-07

AUTHORS

V. V. Rumyantsev, S. V. Morozov, K. E. Kudryavtsev, V. I. Gavrilenko, D. V. Kozlov

ABSTRACT

A series of studies of the impurity-photoconductivity relaxation in Si:B is carried out under pulse optical excitation by a narrow-band tunable radiation source in low and “heating” (10–500 V/cm) electric fields. It is shown that the dependence of the carrier-capture time in a band on the applied electric field is nonmonotonic and, in high fields (>75 V/cm), the capture time decreases with increasing field intensity, which is related to initiating the relaxation processes with optical-phonon emission within the band. The dependence of the relaxation rate for the carriers on the excitation-radiation wavelength is investigated, and a decrease in the carrier-capture time in the band is revealed in the vicinity of the Breit-Wigner-Fano resonances caused by direct capture at an impurity with optical-phonon emission. More... »

PAGES

1387-1391

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782612110188

DOI

http://dx.doi.org/10.1134/s1063782612110188

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1000771210


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