InGaN/GaN heterostructures grown by submonolayer deposition View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2012-10

AUTHORS

A. F. Tsatsulnikov, W. V. Lundin, E. E. Zavarin, A. V. Sakharov, Yu. G. Musikhin, S. O. Usov, M. N. Mizerov, N. A. Cherkashin

ABSTRACT

InGaN/(Al,Ga)N heterostructures containing ultrathin InGaN layers, grown by submonolayer deposition are studied. It is shown that significant phase separation with the formation of local In-enriched regions ∼3–4 nm in height and ∼5–8 nm in lateral size is observed in InGaN layers in the case of InGaN and GaN growth by cyclic deposition to effective thicknesses of less than one monolayer. The effect of growth interruption in a hydrogen-containing atmosphere during submonolayer growth on the structural and optical properties of InGaN/(Al,Ga)N heterostructures is studied. It is shown that these interruptions stimulate phase separation. It is also shown that the formation of In-enriched regions can be controlled by varying the effective InGaN and GaN thicknesses in the submonolayer deposition cycles. More... »

PAGES

1335-1340

References to SciGraph publications

  • 1999-05. Lasing in structures with InAs quantum dots in an (Al, Ga)As matrix grown by submonolayer deposition in JOURNAL OF ELECTRONIC MATERIALS
  • 1997-10. Flow modulation epitaxy of indium gallium nitride in JOURNAL OF ELECTRONIC MATERIALS
  • 2009-01. Study of the formation of InGaN quantum dots on GaN surface in BULLETIN OF THE RUSSIAN ACADEMY OF SCIENCES: PHYSICS
  • Identifiers

    URI

    http://scigraph.springernature.com/pub.10.1134/s106378261210017x

    DOI

    http://dx.doi.org/10.1134/s106378261210017x

    DIMENSIONS

    https://app.dimensions.ai/details/publication/pub.1017134045


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