Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region View Full Text


Ontology type: schema:ScholarlyArticle     


Article Info

DATE

2012-10-10

AUTHORS

A. F. Tsatsulnikov, W. V. Lundin, E. E. Zavarin, A. E. Nikolaev, A. V. Sakharov, M. M. Rozhavskaya, S. O. Usov, P. N. Brunkov, M. A. Synitsin, D. V. Davydov, M. N. Mizerov, N. A. Cherkashin

ABSTRACT

The results of studies of the properties of composite InGaN/GaN/InAlN heterostructures are reported. It is shown that, in the InAlN layer, there is substantial phase separation that brings about the formation of three-dimensional islands consisting of AlN-InAlN-AlN regions. The dimensions of these islands depend on the thickness of the InAlN layer and the conditions of epitaxial growth. Interruptions in the growth of InAlN provide a means for influencing the structural properties of the InAlN islands. The use of composite InGaN/GaN/InAlN heterostructures, in which the InGaN layer with a high In content serves as the active region in light-emitting diode structures, makes it possible to achieve emission in the yellow-red wavelength range 560–620 nm. More... »

PAGES

1281-1285

Identifiers

URI

http://scigraph.springernature.com/pub.10.1134/s1063782612100168

DOI

http://dx.doi.org/10.1134/s1063782612100168

DIMENSIONS

https://app.dimensions.ai/details/publication/pub.1003594337


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